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Cambridge GaN Devices

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uuid0000hxn

Namestring
Cambridge GaN Devices
Legal namestring
Cambridge GaN Devices Ltd
Company typeenum
Private
Founded yearint
2016
Descriptiontext

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun out of the University of Cambridge in 2019 by Dr. Giorgia Longobardi and Professor Florin Udrea, headquartered in Cambridge, UK with a regional office in New Taipei City, Taiwan. The company designs and sells 650V enhancement-mode Gallium Nitride (GaN) power transistors and integrated circuits under its proprietary ICeGaN® platform, which monolithically integrates the GaN HEMT with smart gate-interface circuitry (Miller clamp, current sense, NL3 light-load efficiency circuit) onto a single chip fabricated on standard 8-inch CMOS-compatible processes via GlobalFoundries. Its product portfolio spans H1, H2 and P2 series ICeGaN ICs in DFN and BHDFN packages, supplemented by half-bridge evaluation boards, joint Qorvo motor-drive evaluation kits, and reference designs such as a 3 kW Totem-Pole PFC achieving 99% peak efficiency.

The company targets three primary verticals: data centers and telecom power supplies, electric-vehicle powertrain electronics, and industrial motor drives/renewables. Go-to-market combines direct enterprise sales with a multi-tier distribution network led by Digi-Key globally and regional partners in Taiwan and India. Pricing is quote-based with multi-year enterprise contracts; revenue is generated from hardware sales of GaN power devices and ICs. As of early 2026, a new CEO (Fabio Necco, ex-onsemi) is in place alongside fresh Series C capital ($32M, Feb 2025), a strategic collaboration with NXP Semiconductors (Jun 2026), and an automotive-qualified 9mΩ ICeGaN device in customer sampling — positioning the company at the transition from R&D and reference-design traction toward volume GaN IC production for server, EV and industrial customers.

Short descriptiontext

Cambridge GaN Devices is a fabless semiconductor company that designs and sells 650V ICeGaN® enhancement-mode GaN power transistors and ICs for data-center, electric-vehicle and industrial power-electronics customers, distributing globally via Digi-Key and regional partners and manufacturing through GlobalFoundries.

Operating statusenum
Operating
Ownership categoryenum
Headcount rangeband
51–100
akta.pro rankint
HeadquartersCambridge, United Kingdom
HQ citystring
Cambridge
HQ countrystring
United Kingdom
HQ regionstring
Europe
Markets served

Serves global market

Offices2 records

Each record includes

City, Country, Type, Description, Source

Keyword5 values
gallium nitride power devices, enhancement-mode GaN transistors, power semiconductor ICs, high-voltage GaN HEMTs, energy-efficient power electronics
Industry4 codes
1Power Management & Power Conversion ICs (PMIC/DC‑DC/AC‑DC/Gate Drivers)
CodeHDAHABAEPrimaryYes
2Wide-Bandgap Power Devices (SiC/GaN Discretes)
CodeHDAHAHAGPrimaryNo
3Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging
CodeEUAFAIAJPrimaryNo
4Renewable Power Electronics & Advanced Inverters R&D (SiC/GaN, Grid-Forming, HVDC Converter Tech)
CodeEUAMAOAFPrimaryNo
NAICS code2 codes
  • Semiconductor and Related Device Manufacturing334413
  • Semiconductor and Other Electronic Component Manufacturing33441
SIC code1 code
  • Electronic & Other Electrical Equipment (No Computer Equip)3600
Product category
Power Semiconductors
GTM motion2 records

Each record includes

Type, Description, Source

Revenue model1 record
1GaN Power Device Sales
TypeHardware Sales
Description

Sale of ICeGaN® GaN power transistors and ICs including H2 Series (DFN packages) and P2 Series (BHDFN packages). Products are sold through distributors (Digi-Key globally) and direct sales for enterprise customers.

camgandevices.com
Marketing channels7 records

Each record includes

Title, Type, Stage, Description, Source

Distribution channels4 records

Each record includes

Title, Type, Scope, Target buyer, Description, Source

Cost components5 values
Technology or R&D, Supply Chain, Personnel, Marketing or Sales, Operations
Pricing details1 tier
1Standard product pricing via quote
ModelOtherBilling cadenceMulti-year contract
Notes

Pricing available through contact with sales team or authorized distributors. No public pricing listed on website.

camgandevices.com
GTM typeB2B
B2B
Offering typeHardware or Manufacturing
Hardware or Manufacturing
Core offering1 text field

Cambridge GaN Devices (CGD) designs, develops and commercializes enhancement-mode Gallium Nitride (GaN) power transistors and integrated circuits under its proprietary ICeGaN® technology. Its monolithic single-chip GaN platform integrates gate interface, sensing and protection circuits and is built using a standard Si CMOS wafer fab process. The 650V ICeGaN product family (H1, H2, P2 series) is sold to power-electronics designers in data centres, automotive EV powertrains and industrial motor-drive applications, supported by evaluation boards and reference designs.

Differentiator
Functional benefit
Problem solved
Quantifiable outcome1 of 6 values shown
  • Up to 50% energy savings in power applications compared to silicon devices
+5 more records
Product overview1 text field

Cambridge GaN Devices (CGD) is a fabless semiconductor company offering a portfolio of energy-efficient Gallium Nitride (GaN) power transistors and integrated circuits based on its proprietary ICeGaN technology. The core product line consists of 650V ICeGaN Power ICs available in three series: H1 (first-generation, being phased out), H2 (enhanced with Current Sense and NL³ light-load efficiency features), and P2 (high-power variants in BHDFN packages). These are enhancement-mode GaN HEMTs that can be operated like standard silicon MOSFETs using conventional gate drivers, eliminating the need for special driving circuits or negative voltages. The products target high-efficiency power applications including data centers, electric vehicles, motor drives, and industrial systems. Supporting the semiconductor devices, CGD offers evaluation boards, motor drive evaluation kits (in partnership with Qorvo), and reference designs including a 3kW totem-pole PFC. The technology enables >50% energy savings and 2x smaller electronics compared to silicon alternatives.

Product and service8 records
1ICeGaN 650V Power IC (P2 Series)
CategoryPower Semiconductors
2ICeGaN 650V Power IC (H2 Series)
CategoryPower Semiconductors
3ICeGaN 650V Power IC (H1 Series)
CategoryPower Semiconductors
4650V Automotive ICeGaN Device (9mΩ)
CategoryPower Semiconductors
5ICeGaN Half Bridge Evaluation Boards
CategoryEvaluation Tools
6ICeGaN Motor Drive Evaluation Kits (Qorvo PAC5556A)
CategoryEvaluation Tools
73 kW Totem-Pole PFC Reference Design (CGD-ASY-EVB030FA-01)
CategoryReference Designs
8BHDFN-9-1 and DHDFN-9-1 GaN Power IC Packages
CategoryPower Semiconductors
Scale indicator12 records

Each record includes

Type, Value, Description, Source

Partnership9 partners
Strategic tierCoreTypeStrategic or Co-development PartnerAnnounced on2026-06-09
Description

Long-term collaboration enabling NXP to develop GaN-based system solutions for automotive, industrial, and data centre markets. CGD provides advanced GaN products, early access to next-generation developments, and expertise in GaN processes. NXP offers access to processor and analog product portfolios, system know-how, and global commercial reach.

Strategic tierFlagshipTypeStrategic or Co-development PartnerAnnounced on2025-12-04
Description

CGD won Hyundai's Open Innovation Challenge for sporty driving. Collaboration on proof-of-concept project to evaluate ICeGaN technology for potential automotive applications including EV traction inverters.

Strategic tierCoreTypeTechnology or IntegrationAnnounced on2025-10-13
Description

Manufacturing partnership strengthening CGD's fabless strategy. GlobalFoundries provides state-of-the-art 8-inch process for manufacturing ICeGaN power devices. CGD's design flow applied to GF's process design kit enables faster development of next-generation GaN power devices.

Strategic tierMajorTypeChannel Partner/ Reseller/ Distributor
Description

Partnership for ICeGaN Motor Drive Evaluation Kits (PAC5556AEVK2, PAC5556AEVK3) for white goods, compressors, pumps, industrial fans, and home automation markets.

Strategic tierCoreTypeChannel Partner/ Reseller/ Distributor
Description

Global authorized distributor for CGD ICeGaN products providing worldwide sales coverage.

Strategic tierRegionalTypeChannel Partner/ Reseller/ Distributor
Description

Regional distributor in Taiwan for ICeGaN products.

Strategic tierRegionalTypeChannel Partner/ Reseller/ Distributor
Description

Regional distributor in Taiwan for ICeGaN products.

Strategic tierRegionalTypeChannel Partner/ Reseller/ Distributor
Description

Regional distributor for ICeGaN products.

Strategic tierRegionalTypeChannel Partner/ Reseller/ Distributor
Description

Regional distributor in India for ICeGaN products.

Recent move7 records

Each record includes

Date, Type, Title, Description, Source

Expansion highlight6 records

Each record includes

Type, Description

Peers10 records
TypeDirect peer
Description

Navitas is a direct GaN power IC competitor offering GaNFast power ICs targeting data center, mobile, EV, and consumer applications. Both companies compete for the same GaN power IC design wins with similar value propositions around integration and high-frequency operation.

TypeDirect peer
Description

EPC is a direct competitor in GaN power transistors and ICs, targeting similar applications including DC-DC converters, lidar, and motor drives. Both companies focus on enhancement-mode GaN technology and compete for design wins in high-frequency power conversion.

TypeDirect peer
Description

GaN Systems was a direct GaN power transistor competitor acquired by Infineon in 2023. Now part of Infineon, it competes with CGD across data center, automotive, and industrial power applications with comparable enhancement-mode GaN devices.

TypeDirect peer
Description

Innoscience is a Chinese GaN power semiconductor company with vertically integrated manufacturing. It offers 650V GaN HEMTs targeting similar data center, automotive, and consumer applications, and represents a key price-competitive threat in the GaN power device market.

TypeDirect peer
Description

Transphorm is a GaN power semiconductor competitor offering high-voltage GaN FETs for power conversion applications. The companies compete directly in 650V GaN power devices targeting adapters, data centers, and automotive markets.

TypeBroad incumbent
Description

Power Integrations is an established power conversion IC company with a portfolio spanning AC-DC, LED drivers, and gate drivers. It represents adjacent competition as CGD expands, with overlapping customer relationships in power supply design and a recent expansion into GaN.

TypeBroad incumbent
Description

Infineon is a broad power semiconductor incumbent with significant SiC and GaN portfolios (including the acquired GaN Systems). It competes with CGD across automotive, industrial, and data center power applications, offering both silicon and wide-bandgap solutions.

TypeBroad incumbent
Description

STMicroelectronics is a major power semiconductor incumbent with a growing SiC and GaN portfolio. It competes broadly with CGD in automotive traction inverters, industrial drives, and power conversion applications with strong customer relationships.

TypeBroad incumbent
Description

onsemi is a broad power semiconductor incumbent with SiC and silicon solutions targeting EV and industrial markets. CGD's new CEO Fabio Necco came from onsemi, indicating the competitive overlap in automotive power and data center applications.

TypeBroad incumbent
Description

Wolfspeed is the leading pure-play SiC power semiconductor company with strong automotive traction inverter incumbency (used by Tesla, Lucid, etc.). It represents the primary alternative technology to GaN in EV powertrain applications that CGD must displace.

Market position
Strengths5 records

Each record includes

Headline, Details, Source

Weaknesses5 records

Each record includes

Headline, Details, Source

Competitive moat5 records

Each record includes

Type, Details

Key risks6 records

Each record includes

Headline, Details, Source

Key highlights7 records

Each record includes

Headline, Details, Source

Customer concentration

Classification, Details

Named customers1 record

Each record includes

Name, Industry, Type, Use case, Source, UUID

Segment3 records

Each record includes

Title, Type, Primary, Description, Pain point addressed, Use case, Source

Ideal customer profile3 records

Each record includes

Profile, Firmographic size, Sales motion, Sales cycle length, Buying structure, Purchase trigger, Buyer persona, Geography, Industry vertical, Primary use case, Description, Pain points, Evidence proof points, Target buyer

Technology focused
Yes
API detail
Has APIbool
No

Docs URL, Description

Integration2 records

Each record includes

Title, Type, Description, Source

AI maturity
App detail

Has app

Feature6 records

Each record includes

Title, Differentiator, Description, Source

Core technology
Revenue estimate
Valuation estimate
Number of profiles
Profiles10 records

Each record includes

Name, Designation, Designation category, Overview, Profile commentary, Source

No data
No data
Funding overview

Funding stage, Last funding date, Total funding USD

Funding rounds4 records

Each record includes

Round, Amount USD, Date, Pre money valuation, Total investors, Investors, News

Investors10 records

Each record includes

Name, Type, Date of entry, Rounds participated, Website

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Each record includes

Name, Acquisition type, Announced date, Completed date, Status, Website, News

Investment

Each record includes

Name, Round, Announced date, Lead investor, Website, News

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Cambridge GaN Devices

Power Semiconductorscamgandevices.com

Cambridge GaN Devices is a fabless semiconductor company that designs and sells 650V ICeGaN® enhancement-mode GaN power transistors and ICs for data-center, electric-vehicle and industrial power-electronics customers, distributing globally via Digi-Key and regional partners and manufacturing through GlobalFoundries.

What Cambridge GaN Devices does

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun out of the University of Cambridge in 2019 by Dr. Giorgia Longobardi and Professor Florin Udrea, headquartered in Cambridge, UK with a regional office in New Taipei City, Taiwan. The company designs and sells 650V enhancement-mode Gallium Nitride (GaN) power transistors and integrated circuits under its proprietary ICeGaN® platform, which monolithically integrates the GaN HEMT with smart gate-interface circuitry (Miller clamp, current sense, NL3 light-load efficiency circuit) onto a single chip fabricated on standard 8-inch CMOS-compatible processes via GlobalFoundries. Its product portfolio spans H1, H2 and P2 series ICeGaN ICs in DFN and BHDFN packages, supplemented by half-bridge evaluation boards, joint Qorvo motor-drive evaluation kits, and reference designs such as a 3 kW Totem-Pole PFC achieving 99% peak efficiency.

The company targets three primary verticals: data centers and telecom power supplies, electric-vehicle powertrain electronics, and industrial motor drives/renewables. Go-to-market combines direct enterprise sales with a multi-tier distribution network led by Digi-Key globally and regional partners in Taiwan and India. Pricing is quote-based with multi-year enterprise contracts; revenue is generated from hardware sales of GaN power devices and ICs. As of early 2026, a new CEO (Fabio Necco, ex-onsemi) is in place alongside fresh Series C capital ($32M, Feb 2025), a strategic collaboration with NXP Semiconductors (Jun 2026), and an automotive-qualified 9mΩ ICeGaN device in customer sampling — positioning the company at the transition from R&D and reference-design traction toward volume GaN IC production for server, EV and industrial customers.

Cambridge GaN Devices firmographics

Firmographics
Name
Cambridge GaN Devices
Legal name
Cambridge GaN Devices Ltd
Website
https://camgandevices.com
Company type
Private
Founded year
2016
Operating status
Operating
Headcount range
51–100 employees
Short description
Cambridge GaN Devices is a fabless semiconductor company that designs and sells 650V ICeGaN® enhancement-mode GaN power transistors and ICs for data-center, electric-vehicle and industrial power-electronics customers, distributing globally via Digi-Key and regional partners and manufacturing through GlobalFoundries.
Ownership category
akta.pro rank

Cambridge GaN Devices industry classification

Industry
Product category
Power Semiconductors
NAICS
Semiconductor and Related Device Manufacturing (334413), Semiconductor and Other Electronic Component Manufacturing (33441)
SIC
Electronic & Other Electrical Equipment (No Computer Equip) (3600)
akta.pro primary industry
Power Management & Power Conversion ICs (PMIC/DC‑DC/AC‑DC/Gate Drivers) (HDAHABAE)
akta.pro secondary industries
Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG), Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging (EUAFAIAJ), Renewable Power Electronics & Advanced Inverters R&D (SiC/GaN, Grid-Forming, HVDC Converter Tech) (EUAMAOAF)

Keywords

  • Gallium nitride power devices
  • Enhancement-mode GaN transistors
  • Power semiconductor ICs
  • High-voltage GaN HEMTs
  • Energy-efficient power electronics

Where Cambridge GaN Devices is headquartered

Location

Headquarters

HQ city
Cambridge
HQ country
United Kingdom
HQ region
Europe

Offices2 records

Markets served

Cambridge GaN Devices business model

Business model
GTM type
B2B
Offering type
Hardware or Manufacturing
Cost components
Technology or R&D, Supply Chain, Personnel, Marketing or Sales, Operations

Revenue model

  1. GaN Power Device Sales: Sale of ICeGaN® GaN power transistors and ICs including H2 Series (DFN packages) and P2 Series (BHDFN packages). Products are sold through distributors (Digi-Key globally) and direct sales for enterprise customers.

Pricing tiers

ModelBillingPrice
OtherMulti-year contractStandard product pricing via quote

Go-to-market motion2 records

Distribution channels4 records

Marketing channels7 records

Cambridge GaN Devices product offering

Product offering

Core offering

Cambridge GaN Devices (CGD) designs, develops and commercializes enhancement-mode Gallium Nitride (GaN) power transistors and integrated circuits under its proprietary ICeGaN® technology. Its monolithic single-chip GaN platform integrates gate interface, sensing and protection circuits and is built using a standard Si CMOS wafer fab process. The 650V ICeGaN product family (H1, H2, P2 series) is sold to power-electronics designers in data centres, automotive EV powertrains and industrial motor-drive applications, supported by evaluation boards and reference designs.

Product overview

Cambridge GaN Devices (CGD) is a fabless semiconductor company offering a portfolio of energy-efficient Gallium Nitride (GaN) power transistors and integrated circuits based on its proprietary ICeGaN technology. The core product line consists of 650V ICeGaN Power ICs available in three series: H1 (first-generation, being phased out), H2 (enhanced with Current Sense and NL³ light-load efficiency features), and P2 (high-power variants in BHDFN packages). These are enhancement-mode GaN HEMTs that can be operated like standard silicon MOSFETs using conventional gate drivers, eliminating the need for special driving circuits or negative voltages. The products target high-efficiency power applications including data centers, electric vehicles, motor drives, and industrial systems. Supporting the semiconductor devices, CGD offers evaluation boards, motor drive evaluation kits (in partnership with Qorvo), and reference designs including a 3kW totem-pole PFC. The technology enables >50% energy savings and 2x smaller electronics compared to silicon alternatives.

Differentiator

Problem solved

Functional benefit

Products and services

  • ICeGaN 650V Power IC (P2 Series)
  • ICeGaN 650V Power IC (H2 Series)
  • ICeGaN 650V Power IC (H1 Series)
  • 650V Automotive ICeGaN Device (9mΩ)
  • ICeGaN Half Bridge Evaluation Boards
  • ICeGaN Motor Drive Evaluation Kits (Qorvo PAC5556A)
  • 3 kW Totem-Pole PFC Reference Design (CGD-ASY-EVB030FA-01)
  • BHDFN-9-1 and DHDFN-9-1 GaN Power IC Packages

Quantifiable outcome

  • Up to 50% energy savings in power applications compared to silicon devices
  • +5 more outcomes

Companies that use Cambridge GaN Devices

Customer profile

Named customers1 record

Segments3 records

Ideal customer profiles3 records

Cambridge GaN Devices technology and API

Technology

Technology focussed Yes

API detail

Has API
No
API docs
API detail

Core technology

AI maturity

App detail

Integration2 records

Feature6 records

Cambridge GaN Devices partnerships and signals

Strategic signal

Partnerships

Nine partnerships are on record, tiered core, flagship, major and regional.

  • NXP SemiconductorscoreStrategic or Co-development Partner · 9 June 2026Long-term collaboration enabling NXP to develop GaN-based system solutions for automotive, industrial, and data centre markets. CGD provides advanced GaN products, early access to next-generation developments, and expertise in GaN processes. NXP offers access to processor and analog product portfolios, system know-how, and global commercial reach.
  • Hyundai CRADLE & HMETCflagshipStrategic or Co-development Partner · 4 December 2025CGD won Hyundai's Open Innovation Challenge for sporty driving. Collaboration on proof-of-concept project to evaluate ICeGaN technology for potential automotive applications including EV traction inverters.
  • GlobalFoundries (GF)coreTechnology or Integration · 13 October 2025Manufacturing partnership strengthening CGD's fabless strategy. GlobalFoundries provides state-of-the-art 8-inch process for manufacturing ICeGaN power devices. CGD's design flow applied to GF's process design kit enables faster development of next-generation GaN power devices.
  • QorvomajorChannel Partner/ Reseller/ DistributorPartnership for ICeGaN Motor Drive Evaluation Kits (PAC5556AEVK2, PAC5556AEVK3) for white goods, compressors, pumps, industrial fans, and home automation markets.
  • Digi-Key ElectronicscoreChannel Partner/ Reseller/ DistributorGlobal authorized distributor for CGD ICeGaN products providing worldwide sales coverage.
  • Zenicom CorporationregionalChannel Partner/ Reseller/ DistributorRegional distributor in Taiwan for ICeGaN products.
  • Yuban & CoregionalChannel Partner/ Reseller/ DistributorRegional distributor in Taiwan for ICeGaN products.
  • Wah Lee Industrial CorpregionalChannel Partner/ Reseller/ DistributorRegional distributor for ICeGaN products.
  • Supreme Components InternationalregionalChannel Partner/ Reseller/ DistributorRegional distributor in India for ICeGaN products.

Scale indicators12 records

Recent moves7 records

Expansion highlights6 records

Cambridge GaN Devices competitors and assessment

Company assessment

Direct peers

  • Navitas Semiconductor: Navitas is a direct GaN power IC competitor offering GaNFast power ICs targeting data center, mobile, EV, and consumer applications. Both companies compete for the same GaN power IC design wins with similar value propositions around integration and high-frequency operation.
  • Efficient Power Conversion (EPC): EPC is a direct competitor in GaN power transistors and ICs, targeting similar applications including DC-DC converters, lidar, and motor drives. Both companies focus on enhancement-mode GaN technology and compete for design wins in high-frequency power conversion.
  • GaN Systems (Infineon): GaN Systems was a direct GaN power transistor competitor acquired by Infineon in 2023. Now part of Infineon, it competes with CGD across data center, automotive, and industrial power applications with comparable enhancement-mode GaN devices.
  • Innoscience: Innoscience is a Chinese GaN power semiconductor company with vertically integrated manufacturing. It offers 650V GaN HEMTs targeting similar data center, automotive, and consumer applications, and represents a key price-competitive threat in the GaN power device market.
  • Transphorm: Transphorm is a GaN power semiconductor competitor offering high-voltage GaN FETs for power conversion applications. The companies compete directly in 650V GaN power devices targeting adapters, data centers, and automotive markets.

Broad incumbents

  • Power Integrations: Power Integrations is an established power conversion IC company with a portfolio spanning AC-DC, LED drivers, and gate drivers. It represents adjacent competition as CGD expands, with overlapping customer relationships in power supply design and a recent expansion into GaN.
  • Infineon Technologies: Infineon is a broad power semiconductor incumbent with significant SiC and GaN portfolios (including the acquired GaN Systems). It competes with CGD across automotive, industrial, and data center power applications, offering both silicon and wide-bandgap solutions.
  • STMicroelectronics: STMicroelectronics is a major power semiconductor incumbent with a growing SiC and GaN portfolio. It competes broadly with CGD in automotive traction inverters, industrial drives, and power conversion applications with strong customer relationships.
  • onsemi: onsemi is a broad power semiconductor incumbent with SiC and silicon solutions targeting EV and industrial markets. CGD's new CEO Fabio Necco came from onsemi, indicating the competitive overlap in automotive power and data center applications.
  • Wolfspeed: Wolfspeed is the leading pure-play SiC power semiconductor company with strong automotive traction inverter incumbency (used by Tesla, Lucid, etc.). It represents the primary alternative technology to GaN in EV powertrain applications that CGD must displace.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat5 records

Key risks6 records

Key highlights7 records

Customer concentration

Cambridge GaN Devices social profiles

Digital presence

Cambridge GaN Devices financial estimates

Financial estimate

Revenue estimate

Valuation estimate

Cambridge GaN Devices leadership team

Management profile

Number of profiles

Profiles10 records

Cambridge GaN Devices funding detail

Funding detail

Funding overview

Funding rounds4 records

Investors10 records

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

Cambridge GaN Devices M&A and investment

M&A and investment

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about Cambridge GaN Devices

What does Cambridge GaN Devices do?

Cambridge GaN Devices (CGD) designs, develops and commercializes enhancement-mode Gallium Nitride (GaN) power transistors and integrated circuits under its proprietary ICeGaN® technology. Its monolithic single-chip GaN platform integrates gate interface, sensing and protection circuits and is built using a standard Si CMOS wafer fab process. The 650V ICeGaN product family (H1, H2, P2 series) is sold to power-electronics designers in data centres, automotive EV powertrains and industrial motor-drive applications, supported by evaluation boards and reference designs.

Is Cambridge GaN Devices a public or private company?

Cambridge GaN Devices is a private company. It is classified as venture growth investor backed and is currently operating.

When was Cambridge GaN Devices founded?

Cambridge GaN Devices was founded in 2016. It employs 51 to 100 people.

Where is Cambridge GaN Devices based?

Cambridge GaN Devices is headquartered in Cambridge, United Kingdom, in the Europe region.

How does Cambridge GaN Devices make money?

One revenue line is on record: gaN Power Device Sales.

Who are Cambridge GaN Devices's main competitors?

Direct peers on record are Navitas Semiconductor, Efficient Power Conversion (EPC), GaN Systems (Infineon), Innoscience and Transphorm. Broad incumbents are Power Integrations, Infineon Technologies, STMicroelectronics, onsemi and Wolfspeed.

Does Cambridge GaN Devices have an API?

No public API is recorded for Cambridge GaN Devices.

What industry is Cambridge GaN Devices in?

Cambridge GaN Devices's product category is Power Semiconductors. Its primary akta.pro industry code is HDAHABAE, Power Management & Power Conversion ICs (PMIC/DC‑DC/AC‑DC/Gate Drivers), with a secondary code of HDAHAHAG, Wide-Bandgap Power Devices (SiC/GaN Discretes). Its NAICS code is 334413 and its SIC code is 3600.

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Live signals
EmbeddedPartnerships to Drive WBG Semiconductor InnovationsAt PCIM Europe 2026, multiple power electronics manufacturers announced partnerships to accelerate wide-bandgap semiconductor innovations using silicon carbide (SiC) and gallium nitride (GaN) technologies. GE Aerospace and Wolfspeed signed an MOU to develop high-voltage SiC power modules for industrial, aerospace, and defense applications, while Nexperia partnered with Semikron Danfoss for automotive traction inverter SiC modules and Cambridge GaN Devices collaborated with NXP Semiconductors on GaN power conversion solutions. The power SiC market is projected to reach $11 billion by 2031 with a 20% CAGR, driven by electrification and the deployment of 800-V battery electric vehicles.Foresight GroupCambridge GaN Devices secures $32m to advance power technologyCambridge GaN Devices secured $32 million in Series C funding to expand its operations and develop GaN-based power devices. The funding will support growth in UK, Taiwan, Europe, and North America, with a focus on efficiency and energy savings in power electronics applications.Tracxn2026 Funding Rounds & List of InvestorsCambridge GaN Devices, a UK-based gallium nitride semiconductor company, has completed four funding rounds between 2019 and 2025, raising amounts ranging from approximately £2.5 million in its seed round to £2.3 million in its most recent Series C funding in February 2025. The company's post-money valuations have fluctuated over time, with its Series A valuation reaching £8.5 million in 2021 before declining in subsequent rounds. Lead investors across these rounds have included Foresight, Williams (likely Williams Advanced Engineering), and Parkwalk, with multiple co-investors participating in each stage.Business WeeklyCambridge GaN switches CEO to boost strategic expansionCambridge GaN Devices (CGD), a GaN semiconductor company spun out from Cambridge University, has appointed Fabio Necco as its new CEO, replacing co-founder Giorgia Longobardi who transitions to the role of CMO and will focus on advancing sustainable power electronics solutions. Necco joins from onsemi, where he served as vice president and division general manager with over 25 years of experience in power electronics, vehicle electrification, and data centers. The leadership change is positioned as a strategic move to accelerate CGD's growth phase and expand the company's presence in key markets including electric vehicles and industrial power conversion.IPCambridge GaN Devices partners with GlobalFoundries for advanced power devicesCambridge GaN Devices has announced a strategic partnership with GlobalFoundries to accelerate the development of next-generation Gallium Nitride (GaN) power ICs. The collaboration aims to enhance manufacturing capabilities and supply chain stability for CGD’s single-chip ICeGaN power devices by leveraging standard CMOS processes.AInvestCGD Appoints Robin Lyle as VP R&D to Strengthen High-Power Systems CapabilitiesCambridge GaN Devices appointed Robin Lyle as VP of R&D, bringing 30 years of power semiconductor experience to develop products for data centers, industrial power supplies, and EV applications. The announcement coincides with Analog Devices' Q3 2025 earnings, which reported revenue of $2.88 billion, up nearly 25% year-over-year, and an adjusted EPS of $2.05, 38% higher than the prior year.EvengineeringonlineFunding to boost development of high-efficiency GaN power devicesCambridge GaN Devices has closed a $32 million Series C funding round led by a strategic investor with participation from British Patient Capital and other existing backers. The capital will support the company's expansion across Cambridge, North America, Taiwan, and Europe to meet rising demand for high-efficiency gallium nitride power devices in automotive and industrial markets.EvertiqCambridge GaN Devices secures $32M to drive growthCambridge GaN Devices secured $32 million in a Series C funding round to expand its operations and accelerate growth in the global power electronics market. The capital will support expansion efforts in Cambridge, North America, Taiwan, and Europe, leveraging their ICeGaN technology which offers high efficiency for applications like electric vehicles and data centers.Semiconductor Today magazineCGD raises $32m in Series C funding roundCambridge GaN Devices (CGD) has closed a $32 million Series C funding round led by a strategic investor, with participation from British Patient Capital and existing backers including Parkwalk and BGF. The capital will be used to expand operations in Cambridge, North America, Taiwan, and Europe to support the delivery of its GaN-based power electronics technology to industrial, data-center, and automotive markets. This investment validates CGD's proprietary ICeGaN technology, which aims to reduce energy consumption and CO2 emissions in high-power applications.Design and Development TodayCambridge GaN Devices Secures $32M For Global GrowthCambridge GaN Devices has secured $32 million in a Series C funding round to support its global expansion efforts. The investment was led by a strategic investor and includes participation from entities such as British Patient Capital and existing investors. The funding will help CGD enhance its operations in Cambridge, North America, Taiwan, and Europe to promote its GaN power devices in industries like automotive and data centers.