Transphorm

Name

Transphorm

Legal name

Transphorm, Inc.

Website

https://transphormusa.com

Company type

Public

Founded year

2007

Operating status

Acquired

Headcount range

101–250 employees

Ownership category

akta.pro rank

Product category

Gallium Nitride (GaN) Power Semiconductors

SIC

Semiconductors & Related Devices (3674), Electronic & Other Electrical Equipment (No Computer Equip) (3600)

akta.pro primary industry

Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG)

akta.pro secondary industries

Power Modules (IGBT/MOSFET/SiC/GaN Modules) (HDAHAHAH), Grid-Scale Power Conversion & Interconnection (PCS, Grid-Tie Inverters, Converter Stations) (IMAGAAAI), Renewable Power Electronics & Advanced Inverters R&D (SiC/GaN, Grid-Forming, HVDC Converter Tech) (EUAMAOAF), Power Delivery & Fast-Charging Accessories (GaN, PD/QC, PPS) (CRACATAI)

Keywords

• Gallium nitride semiconductors
• High-voltage power conversion
• GaN power discretes
• Bidirectional power switches
• Wide bandgap semiconductors

Headquarters

HQ city

Goleta

HQ country

United States

HQ region

North America

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Technology or R&D, Supply Chain, Personnel, Operations, Marketing or Sales, Infrastructure

Revenue model

1. GaN Power Semiconductor Sales: Sale of high-voltage GaN power discrete semiconductors for power conversion applications across consumer electronics, industrial, automotive, and AI data center markets.

Go-to-market motion1 record

Distribution channels2 records

Marketing channels4 records

Core offering

Transphorm designs and manufactures high-voltage Gallium Nitride (GaN) power semiconductor discretes based on its proprietary SuperGaN D-mode GaN-on-Si cascode architecture, spanning power levels from 25W to over 10+ kW. Its product portfolio includes 650V GaN FETs, GaN Bidirectional Switches (BDS), and supporting evaluation kits serving power conversion applications in AI data centers, electric vehicles, consumer electronics, industrial motor drives, and renewable energy systems. Since June 2024, the business has operated as a subsidiary of Renesas Electronics Corporation, with products distributed through Renesas' global sales channels.

Product overview

Transphorm develops high-voltage gallium nitride (GaN) power semiconductor technology that was acquired by Renesas Electronics in June 2024. The product portfolio centers on GaN Power Discretes based on the SuperGaN D-mode GaN-on-Si cascode architecture, spanning power ratings from 25W to over 10+ kW. Key products include the 650V GaN Bidirectional Switches (BDS) series featuring the TP65B110HRU 110mΩ device, Gen IV Plus 650V SuperGaN FETs, and supporting evaluation kits. The SuperGaN platform provides a robust normally-off architecture with integrated low-voltage silicon MOSFET front end, enabling compatibility with standard silicon drivers while delivering superior efficiency and performance over silicon, SiC, and e-mode GaN alternatives. The portfolio serves applications across consumer electronics (USB-C power adapters, UPS systems), industrial (motor drives, solar microinverters, digital power conversion), and automotive (EV onboard chargers, X-in-1 EV units).

Differentiator

Problem solved

Functional benefit

Products and services

• GaN Power Discretes High-voltage Gallium Nitride (GaN) power semiconductor discretes for power conversion in AI data centers, EV powertrain systems, industrial motor drives, renewable energy, and consumer electronics. Built on proprietary SuperGaN D-mode GaN-on-Si cascode technology with low losses and 650V ratings.
• TP65B110HRU GaN Bidirectional Switch A 650V 110mΩ high-voltage GaN Bidirectional Switch in a TOLT package that provides true bi-directional voltage blocking and current conduction in a single device. Designed for AI infrastructure, solar inverters, and energy storage applications enabling single-stage power conversion.
• 650V GaN Bidirectional Switch Series A series of 650V GaN bidirectional switches that simplify high-voltage power conversion, reducing system cost, size, and complexity. Enables single-stage power conversion with fewer switching components for AI data centers, solar microinverters, and battery energy storage systems.
• GaN Bidirectional Switch Half-Bridge Evaluation Kit (RTDACHB0000RS-MF-1-KIT) Evaluation kit enabling design engineers to test and benchmark GaN Bidirectional Switch half-bridge configurations for high-voltage power conversion applications. Targeted at engineering teams evaluating Transphorm's GaN BDS devices.
• Gen IV Plus 650V SuperGaN FETs Fourth-generation plus high-voltage 650V GaN FETs delivering lower losses and better performance versus other GaN products, silicon, and SiC alternatives. Spans power spectrum from 25W to over 10+ kW for infrastructure, industrial, automotive, and consumer applications.

Quantifiable outcome

• Over 740 billion hours of field usage from nearly 30 million GaN devices shipped
• +2 more outcomes

Segments4 records

Ideal customer profiles4 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature3 records

Partnerships

Two partnerships are on record, tiered core.

• Renesas Electronics CorporationcoreStrategic or Co-development Partner · 1 June 2024Renesas acquired Transphorm in June 2024 to integrate GaN technology into its power semiconductor portfolio, expanding capabilities in gallium nitride power devices.
• Renesas Electronics CorporationcoreStrategic or Co-development Partner · 1 January 2024Renesas announced bidirectional GaN technology based on its Transphorm acquisition, enabling single-stage power conversion with fewer switching components for AI data centers and solar microinverters.

Scale indicators5 records

Recent moves8 records

Expansion highlights5 records

Direct peers

• Navitas Semiconductor: Navitas is a pure-play GaN power semiconductor company competing head-to-head with Transphorm across USB-PD, consumer, and higher-power applications using a different (e-mode, gate-driver-integrated) architecture versus Transphorm's cascode approach. It is the most direct publicly traded GaN peer.
• Efficient Power Conversion (EPC): EPC specializes in e-mode GaN FETs and ICs spanning similar power and voltage ranges as Transphorm's discretes, serving USB-PD chargers, motor drives, and high-frequency power conversion. It is one of Transphorm's closest technology and end-market competitors.
• Innoscience: Innoscience is one of the largest GaN-on-Si power device manufacturers globally with an integrated fab, competing directly with Transphorm across consumer, automotive, and industrial power applications. It represents the scale and price-pressure benchmark for the GaN discretes segment.
• Power Integrations: Power Integrations sells GaN-based power supply ICs for USB-PD chargers, industrial, and appliance applications, overlapping with Transphorm's consumer and industrial segments. It represents a fabless, IC-integrated alternative to Transphorm's discrete GaN strategy.

Broad incumbents

• Infineon Technologies: Infineon acquired GaN Systems and has a major SiC and GaN roadmap across industrial, automotive, and renewable-energy power conversion. Its broad power-semiconductor portfolio and automotive Tier-1 relationships make it the most significant incumbent competitor to Transphorm/Renesas.
• STMicroelectronics: STMicroelectronics is a major SiC power semiconductor incumbent with a growing GaN program serving automotive traction, industrial, and consumer power applications. It competes with Transphorm wherever wide-bandgap power conversion is specified.
• Wolfspeed: Wolfspeed is a leading pure-play SiC power semiconductor company targeting EV, industrial, and renewable energy applications that overlap directly with Transphorm's high-voltage opportunity. It is the most strategically threatening wide-bandgap alternative to GaN.
• onsemi (ON Semiconductor): onsemi is a major SiC and power semiconductor incumbent with strong traction in EV and industrial power conversion applications. It competes with Transphorm wherever SiC and GaN compete for the same power-conversion sockets.
• ROHM Semiconductor: ROHM is a Japanese power semiconductor leader with SiC and emerging GaN offerings across industrial and automotive markets. Its vertical integration and Japanese Tier-1 relationships make it a relevant comparable as Transphorm integrates into Renesas' Japanese distribution.

Others

• Renesas Electronics Corporation: Renesas acquired Transphorm in June 2024 to integrate GaN into its broader power semiconductor portfolio. While now the parent, Renesas is the platform through which Transphorm's technology is monetized, and its existing IGBT, Si, and SiC lines are adjacencies competing for the same customer sockets.

Market position

Strengths4 records

Weaknesses4 records

Competitive moat4 records

Key risks1 record

Key highlights6 records

Customer concentration

• LinkedInlinkedin.com/company/transphormgan

Revenue estimate

Valuation estimate

Number of profiles

Funding overview

Funding rounds17 records

Investors15 records

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about Transphorm