SICC China
SICC Co., Ltd. is a Chinese manufacturer of silicon carbide (SiC) single crystal substrates for power electronics and RF/microwave applications, serving global semiconductor IDMs and EV, 5G, renewable energy, and AI data center end markets. Listed on Shanghai's STAR Market (688234.SH), it became the global #1 SiC substrate supplier in 2025.
- Company typePublic
- Founded2012
- HeadquartersJinan, China
- Headcount11–50
- GTM typeB2B
- OfferingHardware or Manufacturing
What SICC China does
SICC Co., Ltd. (山东天岳先进科技股份有限公司) is a Chinese manufacturer of silicon carbide (SiC) single crystal substrate materials, the foundational wafers used to fabricate power semiconductor devices and RF/microwave devices. The company's core technology centers on growth of 4H-SiC crystal structures using both the Physical Vapor Transport (PVT) method for industrial-scale production and a proprietary liquid phase method for next-generation larger-diameter substrates. SICC produces three primary product lines: conductive SiC substrates (for power electronics such as EV inverters, charging infrastructure, photovoltaics, rail traction, and smart grid), semi-insulating SiC substrates (for GaN-on-SiC RF devices used in 5G base stations), and P-type SiC substrates (a newer category leveraging liquid phase method technology). Manufacturing spans 4-inch, 6-inch, and 8-inch diameters in mass production, with a world-first 12-inch substrate product line released in 2026.
SICC operates a vertically integrated, self-developed manufacturing process from powder synthesis through crystal growth, slicing, grinding, polishing, and cleaning/testing, with proprietary non-destructive defect detection technology for quality control. The company holds over 600 authorized patents, ranking #1 in China and top 5 globally for SiC substrate IP. Revenue is generated through direct B2B sales of substrates to enterprise customers including major semiconductor IDMs Infineon, Bosch, and Toshiba, with end applications spanning EVs, 5G telecommunications, renewable energy, rail transit, smart grid, and emerging AI data center power architectures. SICC is publicly listed on the Shanghai Stock Exchange STAR Market under ticker 688234.SH, with operations in Jinan (headquarters), Jining (manufacturing), and Shanghai Lingang (sales/marketing). In 2025, SICC became the first Chinese company to lead the global SiC substrate market, reaching 27.6% conductive-type market share according to Fuji Keizai research, up from 12% in 2023.
SICC China firmographics
Firmographics- Name
- SICC China
- Legal name
- 山东天岳先进科技股份有限公司
- Website
- https://sicc.cc
- Company type
- Public
- Founded year
- 2012
- Operating status
- Operating
- Headcount range
- 11–50 employees
- Short description
- SICC Co., Ltd. is a Chinese manufacturer of silicon carbide (SiC) single crystal substrates for power electronics and RF/microwave applications, serving global semiconductor IDMs and EV, 5G, renewable energy, and AI data center end markets. Listed on Shanghai's STAR Market (688234.SH), it became the global #1 SiC substrate supplier in 2025.
- Ownership category
- akta.pro rank
SICC China industry classification
Industry- Product category
- Silicon Carbide (SiC) Substrates
- NAICS
- Semiconductor and Related Device Manufacturing (334413)
- SIC
- Semiconductors & Related Devices (3674)
- akta.pro primary industry
- Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB)
- akta.pro secondary industries
- High-Voltage, Power Discretes & Modules (IGBT/MOSFET/SiC/GaN) (HDAHAAAK), Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging (EUAFAIAJ)
Keywords
Where SICC China is headquartered
LocationHeadquarters
- HQ city
- Jinan
- HQ country
- China
- HQ region
- Asia
Offices3 records
Markets served
SICC China business model
Business model- GTM type
- B2B
- Offering type
- Hardware or Manufacturing
- Cost components
- Technology or R&D, Supply Chain, Operations, Personnel, Infrastructure
Revenue model
- SiC Substrate Sales: SICC generates revenue primarily from manufacturing and selling silicon carbide (SiC) single crystal substrates. The company produces conductive type SiC substrates (used in power electronics), semi-insulating type SiC substrates (used in RF/microwave applications), and P-type SiC substrates. Revenue is generated through direct B2B sales to semiconductor manufacturers, EV companies, and industrial customers.
Go-to-market motion2 records
Distribution channels2 records
Marketing channels4 records
SICC China product offering
Product offeringCore offering
SICC China manufactures silicon carbide (SiC) single crystal substrates in three primary types — conductive, semi-insulating, and P-type — across 4-inch, 6-inch, 8-inch, and 12-inch formats using PVT and proprietary liquid phase methods. These substrates are sold directly to semiconductor manufacturers, EV power electronics companies, RF/5G base station equipment makers, renewable energy system builders, and AI data center infrastructure providers as base material for power devices (MOSFETs, IGBTs) and GaN-on-SiC RF devices.
Product overview
SICC China (山东天岳先进科技股份有限公司) is a leading manufacturer of silicon carbide (SiC) single crystal substrate materials. The company operates a multi-product portfolio consisting of three main substrate types: Conductive SiC Substrates for power electronics applications (EVs, charging stations, photovoltaics, rail transit, smart grid), Semi-Insulating SiC Substrates for GaN-on-SiC RF/microwave applications (5G base stations), and P-Type SiC Substrates using liquid phase method technology. SICC has achieved global leadership in SiC substrate market share (No. 1 worldwide in 2025 according to Fuji Keizai), with capabilities spanning 4-inch, 6-inch, and 8-inch substrates, and pioneering development of 12-inch SiC substrates. The manufacturing process from powder synthesis to crystal growth, cutting, grinding, and polishing is fully self-developed.
Differentiator
Problem solved
Functional benefit
Products and services
- Conductive SiC Substrates (导电型碳化硅衬底) Silicon carbide single crystal substrates with conductive properties used as base material for power semiconductor devices such as MOSFETs and IGBTs. Designed for high-voltage, high-frequency, and high-temperature power electronics applications in EV power inverters, charging stations, photovoltaics, rail transit traction systems, smart grid, and AI data center power infrastructure.
- Semi-Insulating SiC Substrates (半绝缘型碳化硅衬底) Silicon carbide single crystal substrates with semi-insulating properties used primarily as the base for GaN-on-SiC epitaxial growth in microwave and RF applications, including 5G base station power amplifiers and RF front-end modules.
- P-Type SiC Substrates (P型碳化硅衬底) P-type silicon carbide substrates developed using SICC's proprietary liquid phase method. According to research published in the Journal of Crystal Growth, these substrates achieve breakthroughs in crystal quality, electrical uniformity, carrier lifetime, and innovative thermal field design for next-generation power device fabrication.
- SiC Single Crystal Substrate Materials (碳化硅单晶衬底材料) Wide bandgap semiconductor materials (4H-SiC polytype) with high breakdown field strength, high thermal conductivity, and high saturation electron drift velocity, used as the fundamental base material for preparing power electronic devices and microwave RF devices across automotive, industrial, telecom, renewable energy, and AI data center applications.
Quantifiable outcome
- 2025 Global SiC substrate market share of 27.6% (conductive type), up from 12% in 2023
- +2 more outcomes
Companies that use SICC China
Customer profileNamed customers3 records
Segments6 records
Ideal customer profiles3 records
SICC China technology and API
TechnologyTechnology focussed No
API detail
- Has API
- No
- API docs
- API detail
Core technology
AI maturity
App detail
Feature5 records
SICC China partnerships and signals
Strategic signalPartnerships
Two partnerships are on record, tiered core.
- ToshibacoreToshiba and SICC initially signed a memorandum of understanding (MOU) in August 2025 to collaborate on improving SiC power semiconductor wafer quality and expand supply. However, Toshiba scrapped the technical cooperation in October 2025 due to apparent economic security concerns. Despite ending technical cooperation, Toshiba will continue sourcing wafers from SICC, indicating an ongoing commercial customer relationship alongside the strategic pullback.
- ToshibacoreToshiba and SICC signed MOU to collaborate on improving silicon carbide (SiC) power semiconductor wafer quality and expand supply of stable, high-quality wafers from SICC to Toshiba. The proposed collaboration was expected to drive forward improved solutions for various applications including server power supplies and cars, accelerating Toshiba's business expansion while contributing to the broader SiC power semiconductor market growth. Specific collaboration details were still being discussed before the partnership was later terminated.
Scale indicators5 records
Recent moves8 records
Expansion highlights5 records
SICC China competitors and assessment
Company assessmentDirect peers
- Wolfspeed: Formerly Cree, Wolfspeed is a U.S.-based SiC substrate and device manufacturer. Direct competitor that was surpassed by SICC for global #1 SiC substrate market share position in 2025. Both produce conductive and semi-insulating SiC substrates for power and RF applications.
- Coherent (II-VI): Major U.S. compound semiconductor materials manufacturer producing 6-inch and 8-inch SiC substrates. Comparable in that it serves the same IDM customers in power electronics and competes directly with SICC on substrate quality and capacity.
- SK Siltron CSS: South Korea-based SiC substrate manufacturer (acquired from DuPont). Competes with SICC in conductive SiC substrates for power electronics and is expanding capacity to capture EV-driven demand.
- Resonac (formerly Showa Denko): Japanese chemical/materials company producing SiC epitaxial wafers and substrates. Competes with SICC in semi-insulating SiC for RF applications and is a Japanese alternative source for Toshiba and similar customers.
- TanKeBlue Semiconductor: Beijing-based Chinese SiC substrate manufacturer and the other half of the China-based SiC substrate duopoly (together with SICC, ~40% global market share). Competes directly on price and capacity in domestic and export markets.
Emerging players
- ROHM Semiconductor: Japanese power semiconductor manufacturer that has invested in vertical SiC substrate capacity. While primarily a device company, its internal SiC substrate production makes it an adjacent peer/competitor to SICC in captive supply dynamics.
- Synlight Semiconductor: Chinese SiC substrate manufacturer that recently went public. Emerging domestic competitor to SICC focused on conductive SiC substrates for EV and industrial power applications, expanding capacity rapidly.
Broad incumbents
- STMicroelectronics: European IDM with significant SiC power device operations (acquired Norstel for substrate capability). Major buyer of third-party SiC substrates and potential competitor in substrate production, serving similar EV and industrial end markets.
- Soitec: French semiconductor materials specialist producing engineered substrates (SOI, GaN-on-Si). Comparable as a specialty substrate manufacturer serving RF and power markets, though focused on different material platforms than SICC's SiC.
Others
- NVIDIA (as customer/architect): Indirect ecosystem driver: NVIDIA's 800V HVDC architecture for AI data centers is creating structural demand for SiC-based power conversion, positioning SICC's downstream IDM customers (Infineon, etc.) to win sockets that ultimately consume SICC's substrates.
Market position
Strengths5 records
Weaknesses5 records
Competitive moat6 records
Key risks5 records
Key highlights7 records
Customer concentration
SICC China financial estimates
Financial estimateRevenue estimate
Valuation estimate
SICC China leadership team
Management profileNumber of profiles
Profiles2 records
SICC China funding detail
Funding detailFunding overview
Funding rounds3 records
Investors4 records
Funding detail is available on the Subscription and Enterprise plan.Contact sales →
SICC China M&A and investment
M&A and investmentM&A
Investments
M&A and investment is available on the Subscription and Enterprise plan.Contact sales →
Frequently asked questions about SICC China
What does SICC China do?
SICC China manufactures silicon carbide (SiC) single crystal substrates in three primary types — conductive, semi-insulating, and P-type — across 4-inch, 6-inch, 8-inch, and 12-inch formats using PVT and proprietary liquid phase methods. These substrates are sold directly to semiconductor manufacturers, EV power electronics companies, RF/5G base station equipment makers, renewable energy system builders, and AI data center infrastructure providers as base material for power devices (MOSFETs, IGBTs) and GaN-on-SiC RF devices.
Is SICC China a public or private company?
SICC China is a public company. It is classified as public and is currently operating.
When was SICC China founded?
SICC China was founded in 2012. It employs 11 to 50 people.
Where is SICC China based?
SICC China is headquartered in Jinan, China, in the Asia region.
How does SICC China make money?
One revenue line is on record: siC Substrate Sales.
Who are SICC China's main competitors?
Direct peers on record are Wolfspeed, Coherent (II-VI), SK Siltron CSS, Resonac (formerly Showa Denko) and TanKeBlue Semiconductor. Emerging players are ROHM Semiconductor and Synlight Semiconductor. Broad incumbents are STMicroelectronics and Soitec. NVIDIA (as customer/architect) is listed as an others.
Does SICC China have an API?
No public API is recorded for SICC China.
What industry is SICC China in?
SICC China's product category is Silicon Carbide (SiC) Substrates. Its primary akta.pro industry code is HDAHAGAB, Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire), with a secondary code of HDAHAAAK, High-Voltage, Power Discretes & Modules (IGBT/MOSFET/SiC/GaN). Its NAICS code is 334413 and its SIC code is 3674.