SICC China

What SICC China does

SICC Co., Ltd. (山东天岳先进科技股份有限公司) is a Chinese manufacturer of silicon carbide (SiC) single crystal substrate materials, the foundational wafers used to fabricate power semiconductor devices and RF/microwave devices. The company's core technology centers on growth of 4H-SiC crystal structures using both the Physical Vapor Transport (PVT) method for industrial-scale production and a proprietary liquid phase method for next-generation larger-diameter substrates. SICC produces three primary product lines: conductive SiC substrates (for power electronics such as EV inverters, charging infrastructure, photovoltaics, rail traction, and smart grid), semi-insulating SiC substrates (for GaN-on-SiC RF devices used in 5G base stations), and P-type SiC substrates (a newer category leveraging liquid phase method technology). Manufacturing spans 4-inch, 6-inch, and 8-inch diameters in mass production, with a world-first 12-inch substrate product line released in 2026.

SICC operates a vertically integrated, self-developed manufacturing process from powder synthesis through crystal growth, slicing, grinding, polishing, and cleaning/testing, with proprietary non-destructive defect detection technology for quality control. The company holds over 600 authorized patents, ranking #1 in China and top 5 globally for SiC substrate IP. Revenue is generated through direct B2B sales of substrates to enterprise customers including major semiconductor IDMs Infineon, Bosch, and Toshiba, with end applications spanning EVs, 5G telecommunications, renewable energy, rail transit, smart grid, and emerging AI data center power architectures. SICC is publicly listed on the Shanghai Stock Exchange STAR Market under ticker 688234.SH, with operations in Jinan (headquarters), Jining (manufacturing), and Shanghai Lingang (sales/marketing). In 2025, SICC became the first Chinese company to lead the global SiC substrate market, reaching 27.6% conductive-type market share according to Fuji Keizai research, up from 12% in 2023.

Name

SICC China

Legal name

山东天岳先进科技股份有限公司

Website

https://sicc.cc

Company type

Public

Founded year

2012

Operating status

Operating

Headcount range

11–50 employees

Short description

SICC Co., Ltd. is a Chinese manufacturer of silicon carbide (SiC) single crystal substrates for power electronics and RF/microwave applications, serving global semiconductor IDMs and EV, 5G, renewable energy, and AI data center end markets. Listed on Shanghai's STAR Market (688234.SH), it became the global #1 SiC substrate supplier in 2025.

Ownership category

akta.pro rank

Product category

Silicon Carbide (SiC) Substrates

NAICS

Semiconductor and Related Device Manufacturing (334413)

SIC

Semiconductors & Related Devices (3674)

akta.pro primary industry

Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB)

akta.pro secondary industries

High-Voltage, Power Discretes & Modules (IGBT/MOSFET/SiC/GaN) (HDAHAAAK), Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging (EUAFAIAJ)

Keywords

• Silicon carbide substrates
• Wide bandgap semiconductors
• SiC wafer manufacturing
• Power electronics materials
• Semiconductor crystal growth

Headquarters

HQ city

Jinan

HQ country

China

HQ region

Asia

Offices3 records

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Technology or R&D, Supply Chain, Operations, Personnel, Infrastructure

Revenue model

1. SiC Substrate Sales: SICC generates revenue primarily from manufacturing and selling silicon carbide (SiC) single crystal substrates. The company produces conductive type SiC substrates (used in power electronics), semi-insulating type SiC substrates (used in RF/microwave applications), and P-type SiC substrates. Revenue is generated through direct B2B sales to semiconductor manufacturers, EV companies, and industrial customers.

Go-to-market motion2 records

Distribution channels2 records

Marketing channels4 records

Core offering

SICC China manufactures silicon carbide (SiC) single crystal substrates in three primary types — conductive, semi-insulating, and P-type — across 4-inch, 6-inch, 8-inch, and 12-inch formats using PVT and proprietary liquid phase methods. These substrates are sold directly to semiconductor manufacturers, EV power electronics companies, RF/5G base station equipment makers, renewable energy system builders, and AI data center infrastructure providers as base material for power devices (MOSFETs, IGBTs) and GaN-on-SiC RF devices.

Product overview

SICC China (山东天岳先进科技股份有限公司) is a leading manufacturer of silicon carbide (SiC) single crystal substrate materials. The company operates a multi-product portfolio consisting of three main substrate types: Conductive SiC Substrates for power electronics applications (EVs, charging stations, photovoltaics, rail transit, smart grid), Semi-Insulating SiC Substrates for GaN-on-SiC RF/microwave applications (5G base stations), and P-Type SiC Substrates using liquid phase method technology. SICC has achieved global leadership in SiC substrate market share (No. 1 worldwide in 2025 according to Fuji Keizai), with capabilities spanning 4-inch, 6-inch, and 8-inch substrates, and pioneering development of 12-inch SiC substrates. The manufacturing process from powder synthesis to crystal growth, cutting, grinding, and polishing is fully self-developed.

Differentiator

Problem solved

Functional benefit

Products and services

• Conductive SiC Substrates (导电型碳化硅衬底) Silicon carbide single crystal substrates with conductive properties used as base material for power semiconductor devices such as MOSFETs and IGBTs. Designed for high-voltage, high-frequency, and high-temperature power electronics applications in EV power inverters, charging stations, photovoltaics, rail transit traction systems, smart grid, and AI data center power infrastructure.
• Semi-Insulating SiC Substrates (半绝缘型碳化硅衬底) Silicon carbide single crystal substrates with semi-insulating properties used primarily as the base for GaN-on-SiC epitaxial growth in microwave and RF applications, including 5G base station power amplifiers and RF front-end modules.
• P-Type SiC Substrates (P型碳化硅衬底) P-type silicon carbide substrates developed using SICC's proprietary liquid phase method. According to research published in the Journal of Crystal Growth, these substrates achieve breakthroughs in crystal quality, electrical uniformity, carrier lifetime, and innovative thermal field design for next-generation power device fabrication.
• SiC Single Crystal Substrate Materials (碳化硅单晶衬底材料) Wide bandgap semiconductor materials (4H-SiC polytype) with high breakdown field strength, high thermal conductivity, and high saturation electron drift velocity, used as the fundamental base material for preparing power electronic devices and microwave RF devices across automotive, industrial, telecom, renewable energy, and AI data center applications.

Quantifiable outcome

• 2025 Global SiC substrate market share of 27.6% (conductive type), up from 12% in 2023
• +2 more outcomes

Named customers3 records

Segments6 records

Ideal customer profiles3 records

Technology focussed No

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature5 records

Partnerships

Two partnerships are on record, tiered core.

• ToshibacoreStrategic or Co-development Partner · 30 October 2025Toshiba and SICC initially signed a memorandum of understanding (MOU) in August 2025 to collaborate on improving SiC power semiconductor wafer quality and expand supply. However, Toshiba scrapped the technical cooperation in October 2025 due to apparent economic security concerns. Despite ending technical cooperation, Toshiba will continue sourcing wafers from SICC, indicating an ongoing commercial customer relationship alongside the strategic pullback.
• ToshibacoreStrategic or Co-development Partner · 26 August 2025Toshiba and SICC signed MOU to collaborate on improving silicon carbide (SiC) power semiconductor wafer quality and expand supply of stable, high-quality wafers from SICC to Toshiba. The proposed collaboration was expected to drive forward improved solutions for various applications including server power supplies and cars, accelerating Toshiba's business expansion while contributing to the broader SiC power semiconductor market growth. Specific collaboration details were still being discussed before the partnership was later terminated.

Scale indicators5 records

Recent moves8 records

Expansion highlights5 records

Direct peers

• Wolfspeed: Formerly Cree, Wolfspeed is a U.S.-based SiC substrate and device manufacturer. Direct competitor that was surpassed by SICC for global #1 SiC substrate market share position in 2025. Both produce conductive and semi-insulating SiC substrates for power and RF applications.
• Coherent (II-VI): Major U.S. compound semiconductor materials manufacturer producing 6-inch and 8-inch SiC substrates. Comparable in that it serves the same IDM customers in power electronics and competes directly with SICC on substrate quality and capacity.
• SK Siltron CSS: South Korea-based SiC substrate manufacturer (acquired from DuPont). Competes with SICC in conductive SiC substrates for power electronics and is expanding capacity to capture EV-driven demand.
• Resonac (formerly Showa Denko): Japanese chemical/materials company producing SiC epitaxial wafers and substrates. Competes with SICC in semi-insulating SiC for RF applications and is a Japanese alternative source for Toshiba and similar customers.
• TanKeBlue Semiconductor: Beijing-based Chinese SiC substrate manufacturer and the other half of the China-based SiC substrate duopoly (together with SICC, ~40% global market share). Competes directly on price and capacity in domestic and export markets.

Emerging players

• ROHM Semiconductor: Japanese power semiconductor manufacturer that has invested in vertical SiC substrate capacity. While primarily a device company, its internal SiC substrate production makes it an adjacent peer/competitor to SICC in captive supply dynamics.
• Synlight Semiconductor: Chinese SiC substrate manufacturer that recently went public. Emerging domestic competitor to SICC focused on conductive SiC substrates for EV and industrial power applications, expanding capacity rapidly.

Broad incumbents

• STMicroelectronics: European IDM with significant SiC power device operations (acquired Norstel for substrate capability). Major buyer of third-party SiC substrates and potential competitor in substrate production, serving similar EV and industrial end markets.
• Soitec: French semiconductor materials specialist producing engineered substrates (SOI, GaN-on-Si). Comparable as a specialty substrate manufacturer serving RF and power markets, though focused on different material platforms than SICC's SiC.

Others

• NVIDIA (as customer/architect): Indirect ecosystem driver: NVIDIA's 800V HVDC architecture for AI data centers is creating structural demand for SiC-based power conversion, positioning SICC's downstream IDM customers (Infineon, etc.) to win sockets that ultimately consume SICC's substrates.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat6 records

Key risks5 records

Key highlights7 records

Customer concentration

Revenue estimate

Valuation estimate

Number of profiles

Profiles2 records

Funding overview

Funding rounds3 records

Investors4 records

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about SICC China