What Global Power Technologies does

Global Power Technologies (泰科天润, GPT) is a Chinese private IDM (Integrated Device Manufacturer) specializing in third-generation silicon carbide (SiC) power semiconductor devices, founded in 2011 and headquartered in Beijing's Shunyi District with a wholly-owned manufacturing subsidiary in Liuyang, Hunan. The company designs and manufactures SiC Schottky barrier diodes (600V–3300V, 1A–100A), SiC MOSFETs (1200V–6500V, including high-voltage series up to 6500V), SiC bipolar junction transistors (BJTs), hybrid Si IGBT + SiC diode single tubes, SiC power modules, and bare SiC chips. Production runs on an internal 6-inch SiC wafer fab in Liuyang (scaled to 60,000 wafers/year by end-2023) with a 6/8-inch line under construction in Beijing. GPT positions itself as one of China's earliest domestic SiC power-device pioneers, with proprietary technology spanning epitaxial growth, wafer processing, device design, packaging, and reliability testing, and it holds several domestic firsts including the first Chinese SiC AEC-Q101-certified manufacturer (verified by Guangdian Measurement), the first Chinese company to earn DNV and USCG maritime certifications, and an IATF 16949:2016 automotive quality system certification.

The company monetizes through B2B sales of SiC power devices (priced per device type, voltage, current, and package via quote-based B2B enterprise sales), foundry/contract manufacturing services (single-step, multi-step, and one-stop), and vertical-specific application solutions in new-energy vehicle charging and swapping. Distribution combines direct enterprise sales (industry events, conferences, customer visits) with an international Alibaba storefront and an official subscription center. Customer segments are diversified across new-energy vehicle charging/swapping (the largest growth vertical, including Sany Heavy Card, Liufa Group, BYD, Wuling, GAC, and BAIC), photovoltaic and energy-storage inverters, industrial motor drives, rail transit and shipboard power, smart grid and solid-state transformers, and consumer fast-charging/PC power supplies.

GPT is privately held and has raised multiple equity rounds culminating in a D-round (with TCL Chuangtou, Yuanhe Chongyuan, an unnamed international semiconductor major, and existing investor ZeWen Chuangtou), supplemented by a 200 million yuan CCB fixed-asset loan in 2025. Capital has been deployed to vertically integrate SiC wafer materials, mass-produce SiC devices, and drive downstream scaled applications. Recent strategic activity includes a high-voltage MOSFET series launch (2026), an outbound Brazil delegation (2026), and ongoing Beijing 6/8-inch fab buildout — positioning GPT to capture share in China's domestic SiC substitution wave across EV, renewable energy, and grid applications.

Name

Global Power Technologies

Legal name

泰科天润半导体科技（北京）有限公司

Website

https://globalpowertech.cn

Company type

Private

Founded year

2011

Operating status

Operating

Headcount range

251–500 employees

Short description

Global Power Technologies is a Chinese private IDM manufacturing silicon carbide (SiC) power devices — Schottky diodes, MOSFETs, BJTs, and modules — for EV charging, photovoltaic inverters, industrial drives, rail, maritime, and consumer power supply customers, with fabs in Beijing and Liuyang.

Ownership category

akta.pro rank

Headquarters

HQ city

Beijing

HQ country

China

HQ region

Asia

Offices3 records

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Personnel, Supply Chain, Infrastructure, Technology or R&D, Operations, Marketing or Sales

Revenue model

1. SiC功率器件销售 (SiC Power Device Sales): 销售碳化硅肖特基二极管（SBD）、碳化硅MOSFET、碳化硅模块及裸芯片产品，按器件型号、电压等级、封装形式分类定价，面向电源客户、EV充电桩、光伏逆变器等工业客户。B2B直销为主，阿里巴巴国际站为辅。
2. 代工服务 (Foundry/Contract Manufacturing Services): 提供单步代工、多步代工和一站式代工等多种选择，同时协助客户对新产品的设计进行验证。
3. SiC应用解决方案 (SiC Application Solutions): 基于自有SiC器件产品线，提供新能源汽车充换电服务、品质服务、保密服务等垂直行业定制化解决方案。

Pricing tiers

Go-to-market motion3 records

Core offering

Global Power Technologies is an integrated device manufacturer (IDM) of third-generation silicon carbide (SiC) power semiconductors, designing and fabricating SiC Schottky diodes (600V–3300V), SiC MOSFETs (1200V–6500V), SiC power modules, and SiC bare-die chips on its own 4-inch and 6-inch wafer lines. It sells directly to B2B customers such as EV charging station builders, photovoltaic inverter manufacturers, new energy vehicle OEMs, rail-transit equipment makers, smart-grid power electronics companies, and consumer fast-charging/PC power supply producers, with supplementary foundry and quality/confidentiality services.

Product overview

Global Power Technologies (泰科天润) is a Chinese IDM (Integrated Device Manufacturer) specializing in silicon carbide (SiC) power semiconductor devices. The company operates as a manufacturer and application solutions provider for third-generation semiconductor SiC materials. Their core product portfolio includes SiC Schottky Diodes (600V-3300V, 1A-100A), SiC MOSFETs (1200V-6500V high-voltage series), and hybrid devices combining Si IGBT with SiC diodes. They offer comprehensive services including SiC device manufacturing, new energy vehicle charging/swap solutions, quality control, foundry services, and confidentiality services. The company operates production facilities in Beijing and Liuyang (Hunan), producing on 4-inch and 6-inch SiC wafers. Their products serve applications in electric vehicles, photovoltaic inverters, rail transit, smart grids, industrial power supplies, and consumer electronics.

Differentiator

Problem solved

Functional benefit

Products and services

• SiC Schottky Diode (碳化硅肖特基二极管) Silicon carbide Schottky barrier diodes available in voltage ratings from 600V to 3300V and current ratings from 1A to 100A, in packages including TO-220, TO-247, TO-252, SOD123, SMA, and DFN. Designed for power electronics OEMs in EV charging, PV inverters, industrial motor drives, and consumer fast chargers.
• 1200V SiC MOSFET 1200V SiC MOSFET devices in 40mΩ and 80mΩ resistance options, targeting EV charging modules, PV inverters, and motor drives. Features include 3.6V threshold voltage, avalanche energy exceeding 1000mJ, and breakdown voltage over 1500V.
• High-Voltage SiC MOSFET Series (2000V/3300V/4500V/6500V) High-voltage SiC MOSFET devices spanning 1200V, 2000V, 3300V, 4500V, and 6500V voltage platforms with various resistance ratings (24mΩ to 100mΩ). Designed for solid-state transformers, ultra-high-voltage PV inverters, smart grids, and MW-level energy storage applications.
• 650V Hybrid Single Tube (Si IGBT + SiC Diode) Hybrid device combining a 650V/60A silicon IGBT with a SiC diode, significantly reducing IGBT switching losses, improving efficiency, and lowering temperature rise for industrial motor drives, UPS, and variable-frequency air conditioner applications.
• 1700V 0.5A SMA Package SiC Diode 1700V 0.5A SMA-packaged SiC diode targeting three-phase power supplies, energy storage systems, and photovoltaic applications, reducing RCD circuit losses and improving system efficiency.
• SiC Chip (碳化硅芯片) SiC semiconductor chips available in various configurations including 600V–3300V voltage ranges and 1A–100A current ratings, produced on 4-inch and 6-inch wafers for OEM integration into power modules.
• G51XT 650V 1A SOD123 SiC Diode 650V 1A SiC Schottky diode in compact SOD123 package, the smallest SiC device available, designed for fast chargers, GaN adapters, and high-frequency DC/DC converter applications.
• AEC-Q101 Certified 1200V SiC Schottky Diode 1200V SiC Schottky diode that is the first Chinese SiC power device to pass AEC-Q101 automotive-grade reliability certification by a third-party testing institution, suitable for automotive electronics and EV applications.
• 3300V/50A High-Power SiC Schottky Diode 3300V/50A high-power SiC Schottky diode designed for rail transit traction converters, smart grid applications, and other high-voltage, high-current power electronics systems.
• New Energy Vehicle Charging/Swap Solution Service End-to-end SiC power device and battery solution offering for high-power high-voltage charging and high-rate battery applications in new energy vehicles, enabling energy-efficient, easy-to-maintain charging infrastructure for charging station operators and OEMs.
• Foundry Service (代工服务) Provides single-step, multi-step, and one-stop foundry services for SiC wafer processing, including design verification support for customer product development.
• Quality Service (品质服务) Quality management service ensuring strict production process management per quality system standards, with testing throughout the entire production process rather than at final inspection only, supporting AEC-Q101, IATF 16949, ISO 9001, RoHS, REACH, and UL compliance.
• Confidentiality Service (保密服务) Customer information and privacy protection service offering dedicated customer IDs and data stored in physically isolated internal networks, supporting customer data protection during design and production collaborations.

Named customers10 records

Segments6 records

Ideal customer profiles4 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature8 records

Scale indicators15 records

Recent moves9 records

Expansion highlights6 records

Direct peers

• TankeBlue Semiconductor: Beijing-based Chinese SiC substrate and device manufacturer. Direct competitor to GPT in the Chinese SiC IDM market, with overlapping product portfolio in SBDs and MOSFETs and same downstream applications.
• BYD Semiconductor: Vertically integrated Chinese power semiconductor subsidiary of BYD, focused on IGBT and SiC for new energy vehicles. Comparable as a Chinese power semiconductor IDM serving the NEV market, and notably a downstream customer that also competes in adjacent segments.
• SICC (Sienic): Shanghai-based Chinese SiC substrate and power device IDM. Directly comparable to GPT as a domestic Chinese SiC player spanning substrates, diodes, MOSFETs, and modules, targeting the same NEV, PV, and industrial customers.

Broad incumbents

• onsemi (ON Semiconductor): US-based semiconductor company with growing SiC power device portfolio for EV traction, charging, and energy infrastructure. Comparable broad incumbent competing for the same NEV and renewable energy design wins.
• STMicroelectronics: European semiconductor leader with broad SiC MOSFET and diode portfolio for EV, industrial, and energy. Comparable as a global SiC broad incumbent targeting the same end-markets GPT serves, with significantly deeper scale.
• ROHM Semiconductor: Japanese semiconductor manufacturer with vertically integrated SiC substrate-to-module capabilities, strong in industrial and automotive. Comparable as a fully integrated SiC IDM whose high-voltage SiC MOSFET roadmap mirrors GPT's strategic positioning.
• Wolfspeed: US-based global pure-play SiC leader in wafers, MOSFETs, diodes, and power modules. Comparable as the dominant global SiC IDM whose roadmap and pricing set the competitive frontier for GPT's product strategy.
• Toshiba Electronic Devices & Storage: Japanese electronics manufacturer with SiC power device portfolio targeting industrial, rail, and power conversion. Comparable as a high-voltage SiC incumbent in the rail/grid segments GPT is entering with its 4500V/6500V MOSFET series.
• Infineon Technologies: German semiconductor leader in IGBT and SiC power discretes and modules for automotive, industrial, and renewable energy. Comparable global incumbent with extensive SiC IP and the customer relationships GPT is targeting.
• Mitsubishi Electric: Japanese electrical equipment manufacturer with strong high-voltage SiC and IGBT power modules for rail, smart grid, and industrial. Most comparable incumbent for GPT's 2000V-6500V SiC MOSFET push into SST, rail, and grid applications.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat6 records

Key risks5 records

Key highlights7 records

Customer concentration

Compliance8 records

Revenue estimate

Valuation estimate

Number of profiles

Profiles4 records

Subsidiaries1 record

Funding overview

Funding rounds4 records

Investors8 records

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about Global Power Technologies