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United Silicon Carbide

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uuid0004zwm

Namestring
United Silicon Carbide
Legal namestring
United Silicon Carbide Inc.
Websiteurl
unitedsic.com
Company typeenum
Private
Founded yearint
1999
Descriptiontext

United Silicon Carbide Inc. is a semiconductor company that developed and commercialized Silicon Carbide (SiC) Junction Gate Field-Effect Transistor (JFET) technology for high-efficiency power electronics applications. The company's SiC JFET devices served industrial power electronics, electric vehicle powertrain and automotive systems, and data center power conversion use cases, where their wide-bandgap properties deliver reduced switching losses, high-temperature operation, and improved energy efficiency relative to conventional silicon devices. The company was founded in 1999 and operated from Monmouth Junction, New Jersey, with a small specialist organization of 11-50 employees led by Christopher Dries as President and CEO.

Pre-acquisition, United Silicon Carbide operated as a private company with limited publicly disclosed information on pricing, distribution, or revenue mechanics. Its business model centered on selling proprietary SiC JFET power semiconductor devices into design-in opportunities at industrial, automotive, and data center OEMs, supported by a vertical segmentation strategy focused on power conversion applications. Earlier-stage funding activity (rounds in 2013, 2014, and 2016) was modest in scale, consistent with a small IP- and design-focused semiconductor firm.

In December 2024, United Silicon Carbide Inc. was acquired by onsemi Corporation (NASDAQ: ON) for USD 115 million as part of Qorvo's divestiture of its Silicon Carbide JFET technology business. The transaction was a strategic move to expand onsemi's SiC portfolio into high-voltage industrial, automotive, and data center power applications. Following the acquisition, United Silicon Carbide no longer operates as an independent entity and its technology has been integrated into onsemi's broader wide-bandgap semiconductor platform.

Short descriptiontext

United Silicon Carbide Inc. was a private semiconductor company that developed proprietary Silicon Carbide (SiC) JFET power devices for industrial, automotive, and data center power electronics applications, and was acquired by onsemi Corporation for USD 115 million in December 2024.

Operating statusenum
Acquired
Ownership categoryenum
Headcount rangeband
11–50
akta.pro rankint
HeadquartersMonmouth Junction, United States
HQ citystring
Monmouth Junction
HQ countrystring
United States
HQ regionstring
North America
Markets served

Serves global market

Keyword5 values
silicon carbide JFETs, power semiconductors, wide-bandgap devices, power electronics components, high-efficiency power switching
Industry4 codes
1Wide-Bandgap Power Devices (SiC/GaN Discretes)
CodeHDAHAHAGPrimaryNo
2Power Modules (IGBT/MOSFET/SiC/GaN Modules)
CodeHDAHAHAHPrimaryNo
3High-Voltage, Power Discretes & Modules (IGBT/MOSFET/SiC/GaN)
CodeHDAHAAAKPrimaryNo
4Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging
CodeEUAFAIAJPrimaryNo
NAICS code1 code
  • Semiconductor and Related Device Manufacturing334413
SIC code1 code
  • Semiconductors & Related Devices3674
Product category
Power Semiconductors
Social media profiles1 record
Cost components5 values
Technology or R&D, Supply Chain, Operations, Personnel, Marketing or Sales
GTM typeB2B
B2B
Offering typeHardware or Manufacturing
Hardware or Manufacturing
Core offering1 text field

United Silicon Carbide Inc. designs and manufactures Silicon Carbide (SiC) Junction Field-Effect Transistor (JFET) devices used as power semiconductor components. These SiC JFET devices enable high-efficiency, high-voltage power conversion and switching in industrial power electronics, electric vehicle powertrain systems, and data center power infrastructure.

Differentiator
Functional benefit
Problem solved
Product overview1 text field

United Silicon Carbide Inc. specializes in Silicon Carbide (SiC) JFET technology products. The company was acquired by onsemi Corporation in December 2024 as part of Qorvo's SiC JFET business for USD 115 million. SiC JFET devices are used in power electronics applications including automotive, industrial automation, and data center power management. The technology offers benefits in high-voltage, high-efficiency power conversion systems.

Product and service1 record
1Silicon Carbide JFET Devices
CategoryPower Semiconductors
Scale indicator2 records

Each record includes

Type, Value, Description, Source

Partnership1 partner
1onsemi
Strategic tierCoreTypeTechnology or IntegrationAnnounced on2024-12-01
Description

In December 2024, onsemi acquired Qorvo's Silicon Carbide JFET technology business, including United Silicon Carbide Inc., for USD 115 million. This acquisition expanded onsemi's SiC portfolio for industrial, automotive, and data center applications, strengthening its position in the wide-bandgap semiconductor market.

Recent move3 records

Each record includes

Date, Type, Title, Description, Source

Expansion highlight3 records

Each record includes

Type, Description

Market position
Strengths4 records

Each record includes

Headline, Details, Source

Weaknesses4 records

Each record includes

Headline, Details, Source

Competitive moat3 records

Each record includes

Type, Details

Key highlights5 records

Each record includes

Headline, Details, Source

Customer concentration

Classification, Details

Segment3 records

Each record includes

Title, Type, Primary, Description, Pain point addressed, Use case, Source

Ideal customer profile3 records

Each record includes

Profile, Firmographic size, Sales motion, Sales cycle length, Buying structure, Purchase trigger, Buyer persona, Geography, Industry vertical, Primary use case, Description, Pain points, Evidence proof points, Target buyer

Technology focused
Yes
API detail
Has APIbool
No

Docs URL, Description

AI maturity
App detail

Has app

Feature1 record

Each record includes

Title, Differentiator, Description, Source

Core technology
Revenue estimate
Valuation estimate
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Profiles4 records

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Name, Designation, Designation category, Overview, Profile commentary, Source

No data
No data
Funding overview

Funding stage, Last funding date, Total funding USD

Funding rounds3 records

Each record includes

Round, Amount USD, Date, Pre money valuation, Total investors, Investors, News

Investors

Each record includes

Name, Type, Date of entry, Rounds participated, Website

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Each record includes

Name, Acquisition type, Announced date, Completed date, Status, Website, News

Investment

Each record includes

Name, Round, Announced date, Lead investor, Website, News

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

United Silicon Carbide

Power Semiconductorsunitedsic.com

United Silicon Carbide Inc. was a private semiconductor company that developed proprietary Silicon Carbide (SiC) JFET power devices for industrial, automotive, and data center power electronics applications, and was acquired by onsemi Corporation for USD 115 million in December 2024.

What United Silicon Carbide does

United Silicon Carbide Inc. is a semiconductor company that developed and commercialized Silicon Carbide (SiC) Junction Gate Field-Effect Transistor (JFET) technology for high-efficiency power electronics applications. The company's SiC JFET devices served industrial power electronics, electric vehicle powertrain and automotive systems, and data center power conversion use cases, where their wide-bandgap properties deliver reduced switching losses, high-temperature operation, and improved energy efficiency relative to conventional silicon devices. The company was founded in 1999 and operated from Monmouth Junction, New Jersey, with a small specialist organization of 11-50 employees led by Christopher Dries as President and CEO.

Pre-acquisition, United Silicon Carbide operated as a private company with limited publicly disclosed information on pricing, distribution, or revenue mechanics. Its business model centered on selling proprietary SiC JFET power semiconductor devices into design-in opportunities at industrial, automotive, and data center OEMs, supported by a vertical segmentation strategy focused on power conversion applications. Earlier-stage funding activity (rounds in 2013, 2014, and 2016) was modest in scale, consistent with a small IP- and design-focused semiconductor firm.

In December 2024, United Silicon Carbide Inc. was acquired by onsemi Corporation (NASDAQ: ON) for USD 115 million as part of Qorvo's divestiture of its Silicon Carbide JFET technology business. The transaction was a strategic move to expand onsemi's SiC portfolio into high-voltage industrial, automotive, and data center power applications. Following the acquisition, United Silicon Carbide no longer operates as an independent entity and its technology has been integrated into onsemi's broader wide-bandgap semiconductor platform.

United Silicon Carbide firmographics

Firmographics
Name
United Silicon Carbide
Legal name
United Silicon Carbide Inc.
Website
https://unitedsic.com
Company type
Private
Founded year
1999
Operating status
Acquired
Headcount range
11–50 employees
Short description
United Silicon Carbide Inc. was a private semiconductor company that developed proprietary Silicon Carbide (SiC) JFET power devices for industrial, automotive, and data center power electronics applications, and was acquired by onsemi Corporation for USD 115 million in December 2024.
Ownership category
akta.pro rank

Where United Silicon Carbide is headquartered

Location

Headquarters

HQ city
Monmouth Junction
HQ country
United States
HQ region
North America

Markets served

United Silicon Carbide business model

Business model
GTM type
B2B
Offering type
Hardware or Manufacturing
Cost components
Technology or R&D, Supply Chain, Operations, Personnel, Marketing or Sales

United Silicon Carbide product offering

Product offering

Core offering

United Silicon Carbide Inc. designs and manufactures Silicon Carbide (SiC) Junction Field-Effect Transistor (JFET) devices used as power semiconductor components. These SiC JFET devices enable high-efficiency, high-voltage power conversion and switching in industrial power electronics, electric vehicle powertrain systems, and data center power infrastructure.

Product overview

United Silicon Carbide Inc. specializes in Silicon Carbide (SiC) JFET technology products. The company was acquired by onsemi Corporation in December 2024 as part of Qorvo's SiC JFET business for USD 115 million. SiC JFET devices are used in power electronics applications including automotive, industrial automation, and data center power management. The technology offers benefits in high-voltage, high-efficiency power conversion systems.

Differentiator

Problem solved

Functional benefit

Products and services

  • Silicon Carbide JFET Devices

Companies that use United Silicon Carbide

Customer profile

Segments3 records

Ideal customer profiles3 records

United Silicon Carbide technology and API

Technology

Technology focussed Yes

API detail

Has API
No
API docs
API detail

Core technology

AI maturity

App detail

Feature1 record

United Silicon Carbide partnerships and signals

Strategic signal

Partnerships

One partnership is on record.

  • onsemicoreTechnology or Integration · 1 December 2024In December 2024, onsemi acquired Qorvo's Silicon Carbide JFET technology business, including United Silicon Carbide Inc., for USD 115 million. This acquisition expanded onsemi's SiC portfolio for industrial, automotive, and data center applications, strengthening its position in the wide-bandgap semiconductor market.

Scale indicators2 records

Recent moves3 records

Expansion highlights3 records

United Silicon Carbide competitors and assessment

Company assessment

Market position

Strengths4 records

Weaknesses4 records

Competitive moat3 records

Key highlights5 records

Customer concentration

United Silicon Carbide social profiles

Digital presence

United Silicon Carbide financial estimates

Financial estimate

Revenue estimate

Valuation estimate

United Silicon Carbide leadership team

Management profile

Number of profiles

Profiles4 records

United Silicon Carbide funding detail

Funding detail

Funding overview

Funding rounds3 records

Investors

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

United Silicon Carbide M&A and investment

M&A and investment

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about United Silicon Carbide

What does United Silicon Carbide do?

United Silicon Carbide Inc. designs and manufactures Silicon Carbide (SiC) Junction Field-Effect Transistor (JFET) devices used as power semiconductor components. These SiC JFET devices enable high-efficiency, high-voltage power conversion and switching in industrial power electronics, electric vehicle powertrain systems, and data center power infrastructure.

Is United Silicon Carbide a public or private company?

United Silicon Carbide is a private company. It is classified as corporate owned and is currently acquired.

When was United Silicon Carbide founded?

United Silicon Carbide was founded in 1999. It employs 11 to 50 people.

Where is United Silicon Carbide based?

United Silicon Carbide is headquartered in Monmouth Junction, United States, in the North America region.

Does United Silicon Carbide have an API?

No public API is recorded for United Silicon Carbide.

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Live signals
Market Research & Business IntelligenceSiC Sintering Aids Market Size, Share & Forecast to 2036The SiC sintering aids market is projected to grow from USD 0.7 billion in 2026 to USD 1.8 billion by 2036, representing a compound annual growth rate of 9.9%, driven by the global shift toward 800-volt electric vehicle architectures and the expansion of semiconductor manufacturing capacity. Key strategic developments in 2025–2026 include Schunk Group's full acquisition of ESK-SIC to secure high-quality SiC powder supply for 3D-printing operations, Kyocera Corporation's combined investment exceeding 40 billion yen in facility expansions, Wolfspeed's launch of its Gen 4 SiC platform reducing power losses by up to 80%, and onsemi's USD 115 million acquisition of Qorvo's SiC JFET business including United Silicon Carbide. Country-level projections indicate China will lead growth at 11.9% CAGR through 2036, supported by state-backed semiconductor localization programs, while the USA follows at 11.4% CAGR driven by CHIPS Act incentives and domestic manufacturing expansion.openPR.comGlobal Trends Overview: The Rapid Evolution of the N-type Semiconductor Material MarketThe global n-type semiconductor material market is projected to reach $47.91 billion by 2030, growing at a 6.5% CAGR, driven by demand in electric vehicles, AI, and power electronics. In December 2024, onsemi Corporation acquired Qorvo's Silicon Carbide JFET technology business, including United Silicon Carbide Inc., to expand its SiC portfolio for industrial, automotive, and data center applications. In May 2025, Gstar Subic launched its first N-type high-efficiency solar module at its Philippine production facility, featuring 595W peak output and 23.03% efficiency.AppliedphysicsusaThe Future of Semiconductor Manufacturing: Key InnovationsThe semiconductor manufacturing industry is experiencing significant advancements in materials and processes that enhance the performance and efficiency of electronic devices. Innovations such as gallium nitride, silicon carbide, and extreme ultraviolet lithography are driving the next generation of devices, while AI and machine learning contribute to optimizing production. The industry is also focusing on environmental sustainability by implementing green practices and developing new eco-friendly materials.AllaboutcircuitsQorvo Acquires UnitedSiC, Snapping Up More of the Wide Bandgap MarketQorvo has acquired UnitedSiC to expand its presence in the wide bandgap semiconductor market, specifically targeting electric vehicles and industrial power applications. This transaction adds UnitedSiC's silicon carbide (SiC) FET technology to Qorvo's portfolio, enabling deeper integration into high-power infrastructure and renewable energy sectors.GlobeNewswireQorvo® Acquires United Silicon Carbide (UnitedSiC), a Leading Provider of Silicon Carbide Power SemiconductorsQorvo acquired United Silicon Carbide, a silicon carbide power semiconductor manufacturer, to expand into EV, industrial, and data center power markets. UnitedSiC's portfolio includes over 80 SiC devices, with Generation 4 FETs rated at 750V and 5.9 milliohm RDS(on). The acquisition will be led by Dr. Chris Dries under Qorvo's IDP business.GlobeNewswireQorvo® Announces Fiscal 2022 Second Quarter Financial ResultsQorvo reported fiscal 2022 second-quarter revenue of $1.255 billion, up 14.5% year-over-year, with diluted EPS of $2.84. The company also acquired United Silicon Carbide to expand its power franchise. Management expects December revenue to decline sequentially due to supply challenges.Princeton UniversityPower electronics team pushes toward more efficient and compact fusion energyA Princeton University electrical engineering team led by assistant professor Minjie Chen has been awarded $1.1 million by the U.S. Department of Energy to develop high-efficiency, compact power amplifiers for fusion-energy systems. The project, part of ARPA-E's GAMOW initiative, uses wide-bandgap semiconductor devices and partners with Princeton Fusion Systems, United Silicon Carbide and the National Renewable Energy Laboratory.PR NewswireDigi-Key Announces Global Distribution Partnership with UnitedSiCDigi-Key Electronics announced a global distribution partnership with UnitedSiC on March 16, 2020, making UnitedSiC's silicon carbide product portfolio available to Digi-Key customers worldwide with 24-hour availability. The partnership enables UnitedSiC to expand its reach to a wider group of power designers, while Digi-Key adds market-leading SiC semiconductor devices for applications including electric vehicle chargers, DC-DC converters, telecom power supplies, and solar PV inverters to its portfolio.GlobeNewswirePrinceton Power Unveils Silicon-Carbide Power Converter DemonstrationPrinceton Power Systems demonstrated a grid-tied bi-directional power converter using silicon-carbide technology, operating at 30,000 watts and 480 Vac with peak efficiency over 99%. The converter, developed with United Silicon Carbide, is expected to be commercialized with a 100 kW product in 2016.