Developer docs
API playgroundTry for free, no card

Search company profiles

Qromis

Full company profile

uuid000912b

Namestring
Qromis
Websiteurl
qromis.com
Company typeenum
Private
Founded yearint
2015
Descriptiontext

Qromis is a Santa Clara-based semiconductor materials company founded in 2015 that designs and supplies QST™ (Qromis Substrate Technology) engineered substrates for Gallium Nitride (GaN) power device manufacturing. Its core product is a 300-mm QST substrate engineered to support high-voltage GaN HEMT (High Electron Mobility Transistor) devices with breakdown voltages exceeding 650V, addressing cost and yield limitations of legacy 200-mm and silicon-based approaches. The company targets power electronics applications in AI data center power management, industrial power conversion, and automotive power systems, positioning 300-mm wafer economics as a path to displacing silicon in high-voltage power conversion.\n\nQromis operates a technology-collaboration business model rather than a high-volume merchant substrate business: it does not publicly disclose pricing and has no named end-customers, instead co-developing its technology with anchor partners IMEC (process and device R&D) and Shin-Etsu Chemical (substrate supply). The November 2025 IMEC demonstration of a world-record 650V+ GaN breakdown on 300-mm QST material is the principal commercial proof point in the public record, validating the technology but not yet translating into disclosed revenue. The company is privately held, employs 11–50 people, and has one disclosed funding event — a 2018 investment from TEL Venture Capital — with founder Cem Basceri serving as President and CEO.\n\nRevenue mechanics are not disclosed; given the stage of the technology (recent world-record demonstration) and the absence of disclosed sales, the company is best characterized as a pre-commercial / early commercialization deep-tech materials supplier, monetizing through engineering samples, qualification wafers, and collaborative R&D agreements with a small set of strategic partners rather than high-volume merchant shipments.

Short descriptiontext

Qromis is a Santa Clara-based semiconductor materials company that designs 300-mm QST engineered substrates enabling high-voltage GaN power devices (650V+) for AI data center, industrial, and automotive power electronics applications.

Operating statusenum
Operating
Ownership categoryenum
Headcount rangeband
11–50
akta.pro rankint
HeadquartersSanta Clara, United States
HQ citystring
Santa Clara
HQ countrystring
United States
HQ regionstring
North America
Markets served

Serves global market

Keyword5 values
GaN power semiconductors, wide bandgap substrates, QST substrate technology, high voltage GaN devices, power electronics materials
Industry4 codes
1Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire)
CodeHDAHAGABPrimaryYes
2Wide-Bandgap Power Devices (SiC/GaN Discretes)
CodeHDAHAHAGPrimaryNo
3Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging
CodeEUAFAIAJPrimaryNo
4Power Semiconductor Foundries (BCD/Power IC Processes)
CodeHDAHACAEPrimaryNo
NAICS code3 codes
  • Semiconductor and Other Electronic Component Manufacturing33441
  • Semiconductor and Other Electronic Component Manufacturing3344
  • Other Electronic Component Manufacturing334419
SIC code1 code
  • Semiconductors & Related Devices3674
Product category
Semiconductor Materials
Social media profiles2 records
Cost components4 values
Technology or R&D, Operations, Personnel, Supply Chain
GTM typeB2B
B2B
Offering typeHardware or Manufacturing
Hardware or Manufacturing
Core offering1 text field

Qromis designs and manufactures 300-mm QST (Qromis Substrate Technology) substrates that enable high-voltage GaN (Gallium Nitride) power device manufacturing. The substrates support GaN HEMT (High Electron Mobility Transistor) devices with breakdown voltages exceeding 650 V, and are designed to reduce production costs and improve yields for power electronics applications in AI data centers, industrial, and automotive sectors.

Differentiator
Functional benefit
Problem solved
Product overview1 text field

Qromis is a semiconductor materials technology company specializing in QST™ (Qromis Substrate Technology) substrates for GaN power device manufacturing. The company offers 300-mm QST substrates that enable high-voltage GaN devices for applications including AI data centers, industrial, and automotive markets. Qromis collaborates with research partners like IMEC and Shin-Etsu Chemical to advance GaN technology development and production.

Product and service1 record
1QST™ Substrate
CategorySemiconductor Substrates
Description

300-mm QST (Qromis Substrate Technology) substrate designed for GaN (Gallium Nitride) power device manufacturing. The substrate enables high breakdown voltage GaN devices exceeding 650 V and supports cost reduction and improved production yields for high-voltage applications in AI data centers, industrial, and automotive sectors.

Partnership2 partners
Strategic tierCoreTypeStrategic or Co-development PartnerAnnounced on2025-11-13
Description

IMEC achieved a world-record GaN breakdown voltage exceeding 650V on Shin-Etsu Chemical's 300-mm QST substrate as part of a GaN power device development program involving collaboration with QROMIS. The partnership aims to reduce production costs and improve yield for high-voltage GaN devices targeting AI data centers, industrial, and automotive applications.

Strategic tierCoreTypeStrategic or Co-development PartnerAnnounced on2025-11-13
Description

Shin-Etsu Chemical provides 300-mm QST substrates for the GaN power device development program with IMEC and QROMIS. The collaboration demonstrates the potential of QST substrates to reduce device costs and improve production yields for high-voltage GaN devices.

Recent move3 records

Each record includes

Date, Type, Title, Description, Source

Expansion highlight4 records

Each record includes

Type, Description

Peers10 records
TypeEmerging player
Description

IQE is a compound semiconductor wafer foundry supplying GaN, GaAs, InP, and SiC epitaxial wafers for RF, photonics, and power applications. It is a comparable materials-layer company serving GaN power and RF device manufacturers with similar commercial dynamics.

TypeDirect peer
Description

GaN Systems is a pure-play GaN power transistor company focused on high-voltage GaN HEMTs for data center, industrial, and automotive applications. It competes directly with downstream devices that would be built on Qromis's QST substrates.

TypeDirect peer
Description

Navitas Semiconductor is a GaN power IC company shipping GaNFast power ICs for data center, consumer, and automotive applications. It is a direct competitor in the high-voltage GaN power device market that Qromis's QST substrates enable.

TypeBroad incumbent
Description

Renesas is a broad incumbent semiconductor company with significant GaN and SiC investments targeting industrial, data center, and automotive power applications. It is a relevant incumbent peer in Qromis's end markets.

TypeBroad incumbent
Description

Wolfspeed is a leading silicon carbide (SiC) power semiconductor manufacturer with growing GaN activity. It is a broad incumbent competing in the same high-voltage power semiconductor markets (data center, EV, industrial) targeted by Qromis's GaN-on-QST devices.

TypeBroad incumbent
Description

Infineon is a broad incumbent power semiconductor leader offering silicon, SiC, and GaN product lines for automotive, industrial, and data center power applications. It competes with both the SiC and GaN approaches that Qromis's substrates enable.

TypeDirect peer
Description

Soitec is a leading engineered-substrate company specializing in SOI, GaN, and other compound semiconductor substrates for RF and power applications. It is the closest direct peer to Qromis in the compound semiconductor wafer/substrate business model.

TypeDirect peer
Description

EPC designs and manufactures enhancement-mode GaN FETs and ICs for power conversion. It is a direct peer in GaN power semiconductors, particularly relevant to Qromis's high-voltage (>650V) device focus.

TypeDirect peer
Description

Power Integrations designs high-voltage power conversion ICs and has been incorporating GaN (via its InnoSwitch and HiperPFS families). It is a direct peer in GaN-enabled high-voltage power electronics for data center and industrial markets.

TypeDirect peer
Description

Transphorm develops high-voltage GaN FETs for power conversion applications including adapters, data centers, and automotive. It is a direct GaN power device competitor and a likely customer or alternative-substrate buyer relative to Qromis.

Market position
Strengths5 records

Each record includes

Headline, Details, Source

Weaknesses5 records

Each record includes

Headline, Details, Source

Competitive moat3 records

Each record includes

Type, Details

Key risks6 records

Each record includes

Headline, Details, Source

Key highlights6 records

Each record includes

Headline, Details, Source

Customer concentration

Classification, Details

Segment3 records

Each record includes

Title, Type, Primary, Description, Pain point addressed, Use case, Source

Ideal customer profile3 records

Each record includes

Profile, Firmographic size, Sales motion, Sales cycle length, Buying structure, Purchase trigger, Buyer persona, Geography, Industry vertical, Primary use case, Description, Pain points, Evidence proof points, Target buyer

Technology focused
Yes
API detail
Has APIbool
No

Docs URL, Description

AI maturity
App detail

Has app

Feature1 record

Each record includes

Title, Differentiator, Description, Source

Core technology
Revenue estimate
Valuation estimate
Number of profiles
Profiles1 record

Each record includes

Name, Designation, Designation category, Overview, Profile commentary, Source

No data
No data
Funding overview

Funding stage, Last funding date, Total funding USD

Funding rounds1 record

Each record includes

Round, Amount USD, Date, Pre money valuation, Total investors, Investors, News

Investors1 record

Each record includes

Name, Type, Date of entry, Rounds participated, Website

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Each record includes

Name, Acquisition type, Announced date, Completed date, Status, Website, News

Investment

Each record includes

Name, Round, Announced date, Lead investor, Website, News

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Qromis

Semiconductor Materialsqromis.com

Qromis is a Santa Clara-based semiconductor materials company that designs 300-mm QST engineered substrates enabling high-voltage GaN power devices (650V+) for AI data center, industrial, and automotive power electronics applications.

What Qromis does

Qromis is a Santa Clara-based semiconductor materials company founded in 2015 that designs and supplies QST™ (Qromis Substrate Technology) engineered substrates for Gallium Nitride (GaN) power device manufacturing. Its core product is a 300-mm QST substrate engineered to support high-voltage GaN HEMT (High Electron Mobility Transistor) devices with breakdown voltages exceeding 650V, addressing cost and yield limitations of legacy 200-mm and silicon-based approaches. The company targets power electronics applications in AI data center power management, industrial power conversion, and automotive power systems, positioning 300-mm wafer economics as a path to displacing silicon in high-voltage power conversion.\n\nQromis operates a technology-collaboration business model rather than a high-volume merchant substrate business: it does not publicly disclose pricing and has no named end-customers, instead co-developing its technology with anchor partners IMEC (process and device R&D) and Shin-Etsu Chemical (substrate supply). The November 2025 IMEC demonstration of a world-record 650V+ GaN breakdown on 300-mm QST material is the principal commercial proof point in the public record, validating the technology but not yet translating into disclosed revenue. The company is privately held, employs 11–50 people, and has one disclosed funding event — a 2018 investment from TEL Venture Capital — with founder Cem Basceri serving as President and CEO.\n\nRevenue mechanics are not disclosed; given the stage of the technology (recent world-record demonstration) and the absence of disclosed sales, the company is best characterized as a pre-commercial / early commercialization deep-tech materials supplier, monetizing through engineering samples, qualification wafers, and collaborative R&D agreements with a small set of strategic partners rather than high-volume merchant shipments.

Qromis firmographics

Firmographics
Name
Qromis
Website
https://qromis.com
Company type
Private
Founded year
2015
Operating status
Operating
Headcount range
11–50 employees
Short description
Qromis is a Santa Clara-based semiconductor materials company that designs 300-mm QST engineered substrates enabling high-voltage GaN power devices (650V+) for AI data center, industrial, and automotive power electronics applications.
Ownership category
akta.pro rank

Qromis industry classification

Industry
Product category
Semiconductor Materials
NAICS
Semiconductor and Other Electronic Component Manufacturing (33441), Semiconductor and Other Electronic Component Manufacturing (3344), Other Electronic Component Manufacturing (334419)
SIC
Semiconductors & Related Devices (3674)
akta.pro primary industry
Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB)
akta.pro secondary industries
Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG), Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging (EUAFAIAJ), Power Semiconductor Foundries (BCD/Power IC Processes) (HDAHACAE)

Keywords

  • GaN power semiconductors
  • Wide bandgap substrates
  • QST substrate technology
  • High voltage GaN devices
  • Power electronics materials

Where Qromis is headquartered

Location

Headquarters

HQ city
Santa Clara
HQ country
United States
HQ region
North America

Markets served

Qromis business model

Business model
GTM type
B2B
Offering type
Hardware or Manufacturing
Cost components
Technology or R&D, Operations, Personnel, Supply Chain

Qromis product offering

Product offering

Core offering

Qromis designs and manufactures 300-mm QST (Qromis Substrate Technology) substrates that enable high-voltage GaN (Gallium Nitride) power device manufacturing. The substrates support GaN HEMT (High Electron Mobility Transistor) devices with breakdown voltages exceeding 650 V, and are designed to reduce production costs and improve yields for power electronics applications in AI data centers, industrial, and automotive sectors.

Product overview

Qromis is a semiconductor materials technology company specializing in QST™ (Qromis Substrate Technology) substrates for GaN power device manufacturing. The company offers 300-mm QST substrates that enable high-voltage GaN devices for applications including AI data centers, industrial, and automotive markets. Qromis collaborates with research partners like IMEC and Shin-Etsu Chemical to advance GaN technology development and production.

Differentiator

Problem solved

Functional benefit

Products and services

  • QST™ Substrate 300-mm QST (Qromis Substrate Technology) substrate designed for GaN (Gallium Nitride) power device manufacturing. The substrate enables high breakdown voltage GaN devices exceeding 650 V and supports cost reduction and improved production yields for high-voltage applications in AI data centers, industrial, and automotive sectors.

Companies that use Qromis

Customer profile

Segments3 records

Ideal customer profiles3 records

Qromis technology and API

Technology

Technology focussed Yes

API detail

Has API
No
API docs
API detail

Core technology

AI maturity

App detail

Feature1 record

Qromis partnerships and signals

Strategic signal

Partnerships

Two partnerships are on record, tiered core.

  • IMECcoreStrategic or Co-development Partner · 13 November 2025IMEC achieved a world-record GaN breakdown voltage exceeding 650V on Shin-Etsu Chemical's 300-mm QST substrate as part of a GaN power device development program involving collaboration with QROMIS. The partnership aims to reduce production costs and improve yield for high-voltage GaN devices targeting AI data centers, industrial, and automotive applications.
  • Shin-Etsu ChemicalcoreStrategic or Co-development Partner · 13 November 2025Shin-Etsu Chemical provides 300-mm QST substrates for the GaN power device development program with IMEC and QROMIS. The collaboration demonstrates the potential of QST substrates to reduce device costs and improve production yields for high-voltage GaN devices.

Recent moves3 records

Expansion highlights4 records

Qromis competitors and assessment

Company assessment

Emerging players

  • IQE plc: IQE is a compound semiconductor wafer foundry supplying GaN, GaAs, InP, and SiC epitaxial wafers for RF, photonics, and power applications. It is a comparable materials-layer company serving GaN power and RF device manufacturers with similar commercial dynamics.

Direct peers

  • GaN Systems: GaN Systems is a pure-play GaN power transistor company focused on high-voltage GaN HEMTs for data center, industrial, and automotive applications. It competes directly with downstream devices that would be built on Qromis's QST substrates.
  • Navitas Semiconductor: Navitas Semiconductor is a GaN power IC company shipping GaNFast power ICs for data center, consumer, and automotive applications. It is a direct competitor in the high-voltage GaN power device market that Qromis's QST substrates enable.
  • Soitec: Soitec is a leading engineered-substrate company specializing in SOI, GaN, and other compound semiconductor substrates for RF and power applications. It is the closest direct peer to Qromis in the compound semiconductor wafer/substrate business model.
  • Efficient Power Conversion (EPC): EPC designs and manufactures enhancement-mode GaN FETs and ICs for power conversion. It is a direct peer in GaN power semiconductors, particularly relevant to Qromis's high-voltage (>650V) device focus.
  • Power Integrations: Power Integrations designs high-voltage power conversion ICs and has been incorporating GaN (via its InnoSwitch and HiperPFS families). It is a direct peer in GaN-enabled high-voltage power electronics for data center and industrial markets.
  • Transphorm: Transphorm develops high-voltage GaN FETs for power conversion applications including adapters, data centers, and automotive. It is a direct GaN power device competitor and a likely customer or alternative-substrate buyer relative to Qromis.

Broad incumbents

  • Renesas Electronics: Renesas is a broad incumbent semiconductor company with significant GaN and SiC investments targeting industrial, data center, and automotive power applications. It is a relevant incumbent peer in Qromis's end markets.
  • Wolfspeed: Wolfspeed is a leading silicon carbide (SiC) power semiconductor manufacturer with growing GaN activity. It is a broad incumbent competing in the same high-voltage power semiconductor markets (data center, EV, industrial) targeted by Qromis's GaN-on-QST devices.
  • Infineon Technologies: Infineon is a broad incumbent power semiconductor leader offering silicon, SiC, and GaN product lines for automotive, industrial, and data center power applications. It competes with both the SiC and GaN approaches that Qromis's substrates enable.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat3 records

Key risks6 records

Key highlights6 records

Customer concentration

Qromis social profiles

Digital presence

Qromis financial estimates

Financial estimate

Revenue estimate

Valuation estimate

Qromis leadership team

Management profile

Number of profiles

Profiles1 record

Qromis funding detail

Funding detail

Funding overview

Funding rounds1 record

Investors1 record

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

Qromis M&A and investment

M&A and investment

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about Qromis

What does Qromis do?

Qromis designs and manufactures 300-mm QST (Qromis Substrate Technology) substrates that enable high-voltage GaN (Gallium Nitride) power device manufacturing. The substrates support GaN HEMT (High Electron Mobility Transistor) devices with breakdown voltages exceeding 650 V, and are designed to reduce production costs and improve yields for power electronics applications in AI data centers, industrial, and automotive sectors.

When was Qromis founded?

Qromis was founded in 2015. It employs 11 to 50 people.

Where is Qromis based?

Qromis is headquartered in Santa Clara, United States, in the North America region.

Who are Qromis's main competitors?

IQE plc is listed as an emerging player. Direct peers are GaN Systems, Navitas Semiconductor, Soitec, Efficient Power Conversion (EPC), Power Integrations and Transphorm. Broad incumbents are Renesas Electronics, Wolfspeed and Infineon Technologies.

Does Qromis have an API?

No public API is recorded for Qromis.

What industry is Qromis in?

Qromis's product category is Semiconductor Materials. Its primary akta.pro industry code is HDAHAGAB, Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire), with a secondary code of HDAHAHAG, Wide-Bandgap Power Devices (SiC/GaN Discretes). Its NAICS code is 33441 and its SIC code is 3674.

Unlock the full company data

50 free credits on sign-up, no credit card required.

Contact sales
Live signals