FBH
FBH is a Berlin-based Leibniz research institute developing III-V compound semiconductor devices—high-power diode lasers, UV LEDs, terahertz electronics, and quantum photonic modules—for aerospace, telecommunications, healthcare, and fusion energy customers via contract R&D, foundry services, and licensing.
- Company typePrivate
- Founded1992
- HeadquartersBerlin, Germany
- Headcount251–500
- GTM typeB2B
- OfferingServices
What FBH does
FBH (Ferdinand-Braun-Institut), legally Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, is a Berlin-based applied research institute founded in 1992 and operating as part of the Leibniz Association (Leibniz-Gemeinschaft). The institute specializes in III-V compound semiconductor technologies—GaAs, InP, GaN, and AlN—and develops electronic and photonic components, modules, and systems with applications spanning high-power diode lasers, UV LEDs, terahertz electronics, quantum photonics, and power electronics. FBH employs 400 staff from 30 countries and operates 4000 m² of cleanroom and laboratory space in the Berlin-Adlershof science and technology park, sustaining 131 active projects and a portfolio of 295 German and international patents. The institute has generated 12 spin-off companies, most still active.
The product portfolio covers the full value chain from MOVPE epitaxial growth through device fabrication to module and system integration. Core offerings include GaAs-based high-power diode lasers reaching kilowatt power levels, GaN diode lasers for blue/violet emission, UVB/UVC LEDs at 260–280 nm, InP-DHBT-MMIC transceivers with cutoff frequencies above 500 GHz targeting 700+ GHz, LiDAR and MIMO radar modules, miniaturized laser modules (MiLas platform) for space applications, quantum photonic modules including optical isolators and frequency references (CerAMRef), GaN-based power electronics, and emerging r-GeO2 ultra-wide bandgap transistors. Services include prototype engineering, foundry services for InP-on-BiCMOS heterointegration with Leibniz-Institut IHP, and contract epitaxial growth. Notable technical benchmarks include 52 dB self-interference suppression at 4 GHz in the GaN full-duplex front-end and sub-0.5 ml optical isolators delivering over 30 dB isolation across 400–950 nm.
FBH's revenue model combines three streams: majority public research funding from German federal (BMFTR, BMBF), state, European Commission, and Leibniz Association sources; contract R&D and foundry services for industry partners; and technology licensing plus spin-off commercialization. Commercial engagements span aerospace (ESA Ka-band power amplifiers), telecommunications and radar, healthcare (radar-based contactless vital sign monitoring in clinical testing since September 2023 with Thiem-Research GmbH), and inertial fusion energy, where FBH leads the €17.3M DioHELIOS consortium with TRUMPF, ams-OSRAM, Jenoptik, LASERLINE, and Fraunhofer ILT under Germany's €1.2B Fusion 2040 program. Pricing is not publicly disclosed; commercial engagements are conducted through negotiated contracts and consortium agreements rather than standardized pricing.
FBH firmographics
Firmographics- Name
- FBH
- Legal name
- Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik
- Website
- https://fbh-berlin.de
- Company type
- Private
- Founded year
- 1992
- Operating status
- Operating
- Headcount range
- 251–500 employees
- Short description
- FBH is a Berlin-based Leibniz research institute developing III-V compound semiconductor devices—high-power diode lasers, UV LEDs, terahertz electronics, and quantum photonic modules—for aerospace, telecommunications, healthcare, and fusion energy customers via contract R&D, foundry services, and licensing.
- Ownership category
- akta.pro rank
FBH industry classification
Industry- Product category
- Compound Semiconductor Research & Development
- NAICS
- Semiconductor and Related Device Manufacturing (334413), Semiconductor and Other Electronic Component Manufacturing (3344), Semiconductor and Other Electronic Component Manufacturing (33441)
- SIC
- Semiconductors & Related Devices (3674), Electronic Components, Nec (3679), Instruments For Meas & Testing Of Electricity & Elec Signals (3825)
- akta.pro primary industry
- RF & Compound Semiconductor Foundries (GaAs/GaN/SiGe) (HDAHACAD)
- akta.pro secondary industries
- Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB), Foundry Platform & Design Enablement Services (PDK/DFM/Process Qualification) (HDAHACAJ), Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG), Power Modules (IGBT/MOSFET/SiC/GaN Modules) (HDAHAHAH), Semiconductors for Industrial Control & Power (MCUs, DSPs, FPGAs, ASICs, IGBTs, MOSFETs, diodes) (IMAGAJAE)
Keywords
Where FBH is headquartered
LocationHeadquarters
- HQ city
- Berlin
- HQ country
- Germany
- HQ region
- Europe
Offices1 record
Markets served
FBH business model
Business model- GTM type
- B2B
- Offering type
- Services
- Cost components
- Personnel, Technology or R&D, Infrastructure, Operations, Supply Chain
Revenue model
- Public Research Funding: Majority of funding from German federal and state governments through programs including BMFTR (Federal Ministry for Research, Technology and Space), BMBF, European Commission, Leibniz Association core funding, and various research programs such as Fusion 2040
- Industry R&D Contracts: Contract research and development services for industry partners, including custom diode laser module development, foundry services for semiconductor devices, and technology licensing
- Technology Transfer & Licensing: Revenue from licensing patented technologies, spin-off support, and technology transfer agreements with commercial partners
Go-to-market motion1 record
Distribution channels3 records
Marketing channels5 records
FBH product offering
Product offeringCore offering
FBH designs and develops III-V compound semiconductor components, modules, and systems based on GaAs, InP, GaN, and AlN materials, including high-power diode lasers, UV LEDs, InP-DHBT-MMIC terahertz transceivers, GaN power electronics, and quantum photonic modules. The institute provides foundry services for InP-DHBT-MMIC production and full prototype engineering—from MOVPE epitaxy through device fabrication to module and system integration—delivered to industry partners, space agencies, and research institutions.
Product overview
FBH (Ferdinand-Braun-Institut) is a research institute developing compound semiconductor-based electronic and photonic components, modules, and systems. The product portfolio centers on III-V semiconductor technologies spanning diode lasers (GaAs and GaN-based), UV LEDs, terahertz InP HBT transceivers, and quantum photonic modules. These are offered as both discrete devices (laser diodes, LEDs, transistors) and integrated systems (laser modules, LiDAR systems, MIMO radar, optical isolators, frequency references). The MiLas platform enables micro-integrated laser modules for space applications. Services include prototype engineering, epitaxial growth, and process development. Spin-offs include Rydberg Photonics for quantum technologies.
Differentiator
Problem solved
Functional benefit
Brands
- Rydberg Photonics: Spin-off company focused on hybrid-integrated laser systems and optical frequency references for quantum technology applications
- MiLas
- CerAMRef
- VIMRE
Products and services
- InP HBT Transceivers Indium Phosphide Double Heterojunction Bipolar Transistor (InP-DHBT) MMIC transceivers and components operating up to terahertz frequencies, including oscillators (100-500 GHz), frequency multipliers, power amplifiers, and InP-on-BiCMOS heterointegrated circuits for communication and radar applications. Intended for telecom equipment makers, radar system manufacturers and researchers building THz systems.
- High-Speed Laser Drivers Pulsed laser driver electronics delivering peak currents up to 800 A with pulse widths down to 4 ns and optical output exceeding 600 W, including GaN laser drivers for LiDAR systems and mode-locked laser drivers with pulse widths as short as 10 ps. Intended for LiDAR system builders, pulsed laser integrators, and industrial laser manufacturers.
- High-Power GaAs Diode Lasers GaAs-based high-power diode lasers including broad-area lasers, high-brightness lasers, wavelength-stabilized DBR lasers, and multi-junction designs with power levels from milliwatts to kilowatts. Intended for industrial system integrators, aerospace, fusion energy pump source developers, and additive manufacturing OEMs.
- UVB & UVC LEDs UVB and UVC LED components and modules for disinfection, water purification, air cleaning, and healthcare applications, operating at wavelengths between 260-280 nm with multi-wavelength module options for gas sensing. Intended for disinfection system manufacturers, healthcare equipment makers, and gas sensing OEMs.
- GaN Diode Lasers Gallium Nitride-based diode lasers for blue/violet emission, UV applications, and high-power visible laser applications. Intended for blue/UV laser system integrators and industrial laser manufacturers.
- Diode Laser Modules (Pump Lasers) Complete diode laser modules including kW-class pump lasers, miniaturized modules for space applications (MiLas platform), frequency-stabilized and tunable modules, short-pulse lasers, and UV-LED modules. Intended for fusion energy developers, space payload integrators, and industrial laser system builders.
- LiDAR Modules Pulsed laser modules for LiDAR applications including space-qualified systems, 3-emitter and 48-emitter configurations, with peak currents up to 800 A and pulse widths down to 4 ns. Intended for LiDAR system manufacturers, automotive sensor developers, and space-based LiDAR integrators.
- Quantum Light Modules Photonic modules for quantum technology applications including hybrid-integrated laser systems, optical frequency references, single-photon sources, and micro-integrated laser modules for quantum computing and quantum communication. Intended for quantum computing companies, quantum sensing developers, and quantum communication equipment makers.
- Raman Spectroscopy Systems Raman measurement systems using wavelength-stabilized diode lasers with shifted excitation Raman difference spectroscopy (SERDS) for material identification and real-world sensing applications. Intended for analytical instrument manufacturers and process sensing integrators.
- UV LED Irradiation Systems UV LED irradiation systems for skin treatment (VIMRE prototype with 120 UV-LEDs), disinfection, and healthcare applications. Intended for medical device manufacturers and disinfection system integrators.
- GaN Power Electronics GaN-based power electronics including lateral and vertical transistors, half bridges, AlN transistors, gallium oxide power transistors, fast-switching power cores, and power converters for efficient power conversion and high-frequency applications. Intended for power electronics system manufacturers and high-voltage converter developers.
- r-GeO2 MOSFET Power Transistors Lateral rutile germanium dioxide (r-GeO2) MOSFET power transistors on single-crystal substrates, an ultra-wide bandgap material enabling breakdown voltages up to 1280 V. Intended for next-generation high-voltage power electronics developers.
- Miniaturized Optical Isolators Ultra-compact optical isolators for wavelengths 400-950 nm providing over 30 dB isolation with insertion losses below 1.5 dB in less than 0.5 ml volume, using cadmium manganese telluride magneto-optical materials. Intended for integrated quantum photonic system integrators.
- CerAMRef Optical Frequency Reference Module Compact optical frequency reference module producing Doppler-free spectrum of the rubidium D2 line at 780 nm for laser stabilization in quantum sensing and metrology, integrating spectroscopy system, micro-optical components, rubidium vapor cell, photodiode, and readout electronics on a 3D-printed ceramic micro-optical bench. Intended for quantum sensor manufacturers and metrology instrument builders.
- MIMO Radar Systems Modular Multiple-Input-Multiple-Output millimeter-wave radar systems for space applications, with each module integrating 8 transmit and 8 receive channels operating at 95 GHz with 10 GHz bandwidth for high-resolution imaging without moving mechanical components. Intended for space system integrators and high-resolution imaging radar developers.
- Gain-Switched EP-VECSELs Gain-switched electrically pumped Vertical External Cavity Surface Emitting Lasers (EP-VECSELs) for picosecond pulse generation at 1030 nm, developed by FBH with LZH, enabling operation in low-MHz regime without intracavity components. Intended for LiDAR system manufacturers, sensing developers, and seeding source integrators.
- GaN Full-Duplex Front-End GaN-based full-duplex front-end topology demonstrating analog self-interference cancellation achieving up to 52 dB suppression at 4 GHz and high transmit power levels, enabling simultaneous transmission and reception without directive devices for communication and sensing systems. Intended for wireless infrastructure and radar system developers.
- Prototype Engineering Services Full-service prototype development including simulation and design, epitaxial layers, wafer processes, laser facet passivation and coating, and analytics and measurement services. Intended for industry partners and research organizations requiring compound semiconductor prototype development.
- MiLas Platform Micro-integrated laser module platform for space applications combining micro-optical integration with high mechanical and thermal stability, suitable for optical communication, sensing, and quantum technology applications in space environments. Intended for space payload integrators and satellite systems manufacturers.
- Diode Laser Pump Sources for Fusion Energy High-power diode laser pump sources for inertial fusion energy power plants, replacing inefficient flash lamps with scalable, efficient diode pump technology, advancing III-V technology, wavelength-stabilized diode concepts, and ultra-high-power designs to reduce cost per watt. Intended for commercial fusion power plant developers and research facilities.
Quantifiable outcome
- High-power diode lasers for fusion energy: Cost reduction target from €1/watt to below 2 cents/watt
- +4 more outcomes
Companies that use FBH
Customer profileNamed customers4 records
Segments5 records
Ideal customer profiles5 records
FBH technology and API
TechnologyTechnology focussed Yes
API detail
- Has API
- No
- API docs
- API detail
Core technology
AI maturity
App detail
Feature6 records
FBH partnerships and signals
Strategic signalPartnerships
Twelve partnerships are on record, tiered core and minor.
- TRUMPFcoreLead coordinator of the DioHELIOS project funded by Germany's Fusion 2040 programme (€17.3 million). FBH and TRUMPF collaborate on developing high-power diode laser pump sources for commercial fusion power plants, targeting cost reductions from €1 per watt to below 2 cents per watt.
- ams-OSRAMcoreConsortium partner in DioHELIOS project for fusion laser development. Demonstrated 1 kW output power at 64% efficiency under fusion-relevant pulse conditions.
- JenoptikcoreConsortium partner in DioHELIOS project focused on diode laser technology for inertial fusion energy applications.
- LASERLINEcoreConsortium partner in DioHELIOS project contributing to high-power diode laser development for fusion power plants.
- Fraunhofer ILTcoreResearch partner in DioHELIOS consortium advancing semiconductor laser technology for inertial fusion energy.
- Rydberg TechnologiesminorMichigan-based company providing atomic vapor cells and reference devices that complement Rydberg Photonics' product line. David Anderson (CEO) is co-founder of both companies, enabling integrated product offerings for quantum technology applications.
- Ferdinand-Braun-Institut (FBH)coreLead research institution for diode lasers as critical components for laser-based inertial fusion ignition. Part of €1.2 billion Fusion 2040 funding programme.
- Leibniz-Institut für innovative Mikroelektronik (IHP)coreCollaboration on InP-on-BiCMOS heterointegration foundry services. IHP contributes BiCMOS technology while FBH provides InP DHBT processes for combined wafer-level integration achieving over 500 GHz cutoff frequencies.
- Goethe University FrankfurtcoreJoint Goethe-Leibniz-Terahertz-Center established for terahertz research, combining FBH's device expertise with university's system research capabilities.
- Brandenburg University of Technology Cottbus-SenftenbergminorCollaborative development of 61 GHz radar sensor system for contactless patient vital sign monitoring. FBH contributes sensor expertise for the multistatic radar system.
- Thiem-Research GmbHminorClinical testing partner for radar-based patient monitoring system. System has been in clinical testing since September 2023.
- Technische Universität BerlincoreAcademic teaching partner with FBH researchers supervising doctoral candidates and participating in university education programs. Joint academic initiatives in semiconductor technology.
Scale indicators10 records
Recent moves7 records
Expansion highlights5 records
FBH competitors and assessment
Company assessmentDirect peers
- Fraunhofer IAF (Institute for Applied Solid State Physics): German applied research institute specializing in compound semiconductor (GaAs, GaN, InP) devices and circuits for RF, power electronics, and quantum applications. Directly comparable to FBH in mission, materials focus, and end-market overlap, including III-V electronics and laser development.
- Leibniz Institute for Innovative Microelectronics (IHP): Fellow Leibniz-Association institute focused on SiGe BiCMOS and silicon-based microelectronics, with whom FBH operates a joint InP-on-BiCMOS heterointegration foundry. Shares public-research funding model, German location, and overlap in high-frequency/THz semiconductor device development.
- Laser Zentrum Hannover (LZH): German research institute specializing in laser development and photonics, collaborating with FBH on VECSEL technology. Comparable as a publicly funded applied-research organization developing laser components and systems for industrial and scientific applications.
Emerging players
- TRUMPF: Industrial laser systems leader and lead industrial partner in the DioHELIOS fusion pump-source consortium with FBH. Overlaps with FBH in high-power diode laser technology for industrial and emerging fusion-energy applications.
- MACOM Technology Solutions: US-based compound semiconductor company specializing in GaAs, GaN, and InP RF/mmW devices for telecom, radar, and aerospace. Comparable to FBH's InP HBT and GaN RF electronic device portfolios, particularly for THz and high-frequency applications.
- Vector Photonics: UK-based spin-out from University of Glasgow developing semiconductor lasers (VCSELs and PCSELs) for datacom, sensing, and consumer electronics. Comparable as a research-institute spin-out commercializing III-V laser technology, mirroring FBH's Rydberg Photonics pathway.
Broad incumbents
- ams-OSRAM: Global semiconductor and photonics manufacturer with broad portfolios in LEDs, laser diodes, and optical sensors. Consortium partner in DioHELIOS; comparable to FBH across GaAs-based diode laser products and UV LED components for industrial and consumer markets.
- Jenoptik: German photonics and laser systems company participating in the DioHELIOS fusion-energy consortium. Comparable in diode laser modules and laser-based industrial systems serving similar end markets as FBH's kW-class pump lasers.
- Coherent Corp: Global photonics and compound semiconductor company with deep portfolios in III-V laser diodes, photonic integrated circuits, and InP-based components. Comparable to FBH in GaAs/InP diode laser technology and broad photonics end markets.
- Qorvo: Global RF semiconductor company with strong GaN-on-SiC and GaAs product lines for telecom, defense, and radar. Overlaps with FBH's GaN RF power amplifiers and III-V MMIC capabilities at the commercial product tier.
Market position
Strengths5 records
Weaknesses5 records
Competitive moat5 records
Key risks5 records
Key highlights6 records
Customer concentration
FBH social profiles
Digital presenceFBH financial estimates
Financial estimateRevenue estimate
Valuation estimate
FBH leadership team
Management profileNumber of profiles
Profiles6 records
FBH subsidiaries and ownership
Company hierarchySubsidiaries1 record
FBH funding detail
Funding detailFunding overview
Funding rounds
Investors
Funding detail is available on the Subscription and Enterprise plan.Contact sales →
FBH M&A and investment
M&A and investmentM&A
Investments
M&A and investment is available on the Subscription and Enterprise plan.Contact sales →
Frequently asked questions about FBH
What does FBH do?
FBH designs and develops III-V compound semiconductor components, modules, and systems based on GaAs, InP, GaN, and AlN materials, including high-power diode lasers, UV LEDs, InP-DHBT-MMIC terahertz transceivers, GaN power electronics, and quantum photonic modules. The institute provides foundry services for InP-DHBT-MMIC production and full prototype engineering—from MOVPE epitaxy through device fabrication to module and system integration—delivered to industry partners, space agencies, and research institutions.
Is FBH a public or private company?
FBH is a private company. It is classified as nonprofit foundation owned and is currently operating.
When was FBH founded?
FBH was founded in 1992. It employs 251 to 500 people.
Where is FBH based?
FBH is headquartered in Berlin, Germany, in the Europe region.
How does FBH make money?
Three revenue lines are on record. Public Research Funding is the primary driver. The others are industry R&D Contracts and technology Transfer & Licensing.
Who are FBH's main competitors?
Direct peers on record are Fraunhofer IAF (Institute for Applied Solid State Physics), Leibniz Institute for Innovative Microelectronics (IHP) and Laser Zentrum Hannover (LZH). Emerging players are TRUMPF, MACOM Technology Solutions and Vector Photonics. Broad incumbents are ams-OSRAM, Jenoptik, Coherent Corp and Qorvo.
Does FBH have an API?
No public API is recorded for FBH.
What industry is FBH in?
FBH's product category is Compound Semiconductor Research & Development. Its primary akta.pro industry code is HDAHACAD, RF & Compound Semiconductor Foundries (GaAs/GaN/SiGe), with a secondary code of HDAHAGAB, Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire). Its NAICS code is 334413 and its SIC code is 3674.