Developer docs
API playgroundTry for free, no card

Search company profiles

GT Advanced Technologies

Full company profile

uuid00265s9

Namestring
GT Advanced Technologies
Legal namestring
GT Advanced Technologies
Websiteurl
gtat.com
Company typeenum
Private
Founded yearint
1994
Descriptiontext

GT Advanced Technologies (GTAT) was founded in 1994 and specialized in crystal growth equipment and substrate production, originally serving the solar, LED, and consumer electronics industries. After a 2014 Chapter 11 bankruptcy filing in New Hampshire, the company was restructured around Silicon Carbide (SiC) crystal growth and substrate production for power semiconductor applications, culminating in its 2021 acquisition by ON Semiconductor (onsemi). As a wholly-owned subsidiary, GTAT provides onsemi with internal SiC crystal production capability, forming the foundation of onsemi's vertically integrated SiC supply chain spanning volume boule growth, substrate fabrication, epitaxy, device fabrication, and packaging.

GTAT's core technology centers on volume SiC boule crystal growth and substrate production, with a transition to 200mm SiC wafer production that delivers approximately 80% more chip output per wafer than smaller-diameter substrates. This capability underpins onsemi's EliteSiC product family, including MOSFETs, Schottky diodes, and power modules used in automotive electrification (EV powertrain, ADAS), industrial automation, energy infrastructure, and data center power applications. The subsidiary operates from Hudson, USA, with 501–1,000 employees, and its crystal and substrate output is consumed internally by onsemi rather than sold on the merchant market.

The business model shifted from merchant equipment and substrate sales to a captive supply model post-acquisition. Pricing is not publicly disclosed, and standalone revenue is no longer reported because GTAT is consolidated within onsemi. Prior to the acquisition, GTAT pursued a B2B model selling crystal growth equipment and SiC substrates to solar, LED, and semiconductor customers, with public-company funding rounds of approximately $50.2 million (2013) and $33.5 million (2010). Historical M&A activity — including Crystal Systems (2010, $78.75M), Confluence Solar (2011), and Twin Creeks Technologies (2012) — built the SiC and advanced crystal platform that ultimately attracted onsemi as a strategic acquirer.

Operating statusenum
Acquired
Ownership categoryenum
Headcount rangeband
501–1,000
akta.pro rankint
HeadquartersHudson, United States
HQ citystring
Hudson
HQ countrystring
United States
HQ regionstring
North America
Markets served

Serves global market

Keyword5 values
silicon carbide substrates, power semiconductor materials, crystal growth equipment, SiC wafer production, wide bandgap semiconductors
Industry3 codes
1Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire)
CodeHDAHAGABPrimaryYes
2Wide-Bandgap Power Devices (SiC/GaN Discretes)
CodeHDAHAHAGPrimaryNo
3Power Modules (IGBT/MOSFET/SiC/GaN Modules)
CodeHDAHAHAHPrimaryNo
NAICS code2 codes
  • Semiconductor Machinery Manufacturing333242
  • Semiconductor and Related Device Manufacturing334413
SIC code1 code
  • Industrial Process Furnaces & Ovens3567
Product category
Silicon Carbide (SiC) Substrates
Cost components5 values
Operations, Technology or R&D, Personnel, Supply Chain, Infrastructure
GTM typeB2B
B2B
Offering typeHardware or Manufacturing
Hardware or Manufacturing
Core offering1 text field

GT Advanced Technologies (GTAT) specializes in Silicon Carbide (SiC) crystal growth and substrate production for power semiconductor applications. Following its 2021 acquisition by ON Semiconductor (onsemi), it provides end-to-end SiC capability spanning volume boule growth, substrate fabrication, epitaxy, device fabrication, and packaging. The company's manufacturing includes transition to 200mm SiC wafer production, enabling approximately 80% increased chip output per wafer.

Differentiator
Functional benefit
Problem solved
Product overview1 text field

GT Advanced Technologies was acquired by ON Semiconductor in 2021 for internal SiC crystal production. The company operates as part of onsemi's intelligent power and sensing technologies portfolio, providing vertical integration for Silicon Carbide (SiC) power semiconductors. GT Advanced Technologies' SiC capabilities enable onsemi to offer end-to-end SiC solutions from raw material growth through finished device manufacturing, supporting the production of MOSFETs, Schottky diodes, and power modules for automotive, industrial, and energy infrastructure applications.

Product and service1 record
1GT Advanced Technologies SiC Crystal Production
Partnership1 partner
Strategic tierCoreTypeStrategic or Co-development PartnerAnnounced on2021-01-01
Description

onsemi acquired GT Advanced Technologies in 2021 specifically to gain internal Silicon Carbide (SiC) crystal production capability. This strategic acquisition transformed onsemi into a vertically integrated SiC supplier with end-to-end capability from substrate through device packaging, enabling supply chain security and cost efficiency for SiC power semiconductors targeting automotive electrification, industrial automation, and AI data center markets.

Recent move6 records

Each record includes

Date, Type, Title, Description, Source

Expansion highlight3 records

Each record includes

Type, Description

Peers10 records
TypeDirect peer
Description

Wolfspeed is the most direct competitor to GTAT in the SiC substrate and device market, operating its own vertically integrated SiC supply chain from boule growth through power devices. Both compete on the same merchant substrate customer relationships and overlapping automotive and industrial power conversion end markets.

TypeDirect peer
Description

Coherent is a major merchant SiC substrate producer serving power-device fabs worldwide, including through 150mm and 200mm wafer programs. GTAT competes head-to-head with Coherent's SiC substrate business for the same automotive and industrial power semiconductor customers that onsemi supplies.

TypeEmerging player
Description

SICC is a Chinese SiC substrate manufacturer scaling rapidly with domestic Chinese supply chain support. While currently smaller, SICC represents a competitively priced SiC substrate source that overlaps GTAT's served merchant and captive markets.

TypeBroad incumbent
Description

STMicroelectronics is a vertically integrated SiC power device manufacturer with internal substrate sourcing. While it does not run SiC boule growth at the same scale as GTAT, it competes for the same automotive design wins with SiC MOSFETs and modules using substrates sourced largely from Coherent, Resonac, and other merchant suppliers.

TypeOthers
Description

AIXTRON manufactures MOCVD and CVD deposition equipment used in SiC and GaN epitaxy and crystal growth. While upstream rather than directly competing on substrates, AIXTRON's equipment enables the same SiC value chain GTAT operates within.

TypeEmerging player
Description

Soitec is a semiconductor engineered substrate producer (notably SOI) and has publicly explored SiC substrate technologies. While not a direct head-to-head SiC competitor today, Soitec represents a potential adjacent entrant in advanced engineered substrates for power applications overlapping GTAT's roadmap.

TypeBroad incumbent
Description

Infineon is a leading SiC power device supplier serving automotive and industrial customers. It competes with onsemi/GTAT on the device side and sources SiC substrates from merchant suppliers that compete with GTAT's substrate business.

TypeDirect peer
Description

ROHM has invested in fully integrated SiC supply chain, including substrate acquisition activity, and is one of the most aggressive vertically integrated SiC device competitors to the onsemi/GTAT combination. Both target the same automotive inverter and industrial power conversion sockets.

TypeDirect peer
Description

Resonac is a leading SiC epitaxial wafer supplier and merchant substrate producer competing directly with GTAT's SiC substrate output. Both serve the same SiC power device value chain and overlapping EV and industrial power customers.

TypeDirect peer
Description

SK Siltron acquired the former DuPont SiC substrate business and is one of the leading merchant SiC substrate suppliers. It competes with GTAT on SiC wafer supply for the same power-device customers and is also scaling 200mm SiC wafer programs.

Market position
Strengths5 records

Each record includes

Headline, Details, Source

Weaknesses5 records

Each record includes

Headline, Details, Source

Competitive moat4 records

Each record includes

Type, Details

Key risks5 records

Each record includes

Headline, Details, Source

Key highlights6 records

Each record includes

Headline, Details, Source

Customer concentration

Classification, Details

Ideal customer profile2 records

Each record includes

Profile, Firmographic size, Sales motion, Sales cycle length, Buying structure, Purchase trigger, Buyer persona, Geography, Industry vertical, Primary use case, Description, Pain points, Evidence proof points, Target buyer

Technology focused
Yes
API detail
Has APIbool
No

Docs URL, Description

AI maturity
App detail

Has app

Feature3 records

Each record includes

Title, Differentiator, Description, Source

Core technology
Revenue estimate
Valuation estimate
Number of profiles
Profiles6 records

Each record includes

Name, Designation, Designation category, Overview, Profile commentary, Source

No data
No data
Funding overview

Funding stage, Last funding date, Total funding USD

Funding rounds2 records

Each record includes

Round, Amount USD, Date, Pre money valuation, Total investors, Investors, News

Investors

Each record includes

Name, Type, Date of entry, Rounds participated, Website

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A3 records

Each record includes

Name, Acquisition type, Announced date, Completed date, Status, Website, News

Investment

Each record includes

Name, Round, Announced date, Lead investor, Website, News

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

GT Advanced Technologies

Silicon Carbide (SiC) Substratesgtat.com

What GT Advanced Technologies does

GT Advanced Technologies (GTAT) was founded in 1994 and specialized in crystal growth equipment and substrate production, originally serving the solar, LED, and consumer electronics industries. After a 2014 Chapter 11 bankruptcy filing in New Hampshire, the company was restructured around Silicon Carbide (SiC) crystal growth and substrate production for power semiconductor applications, culminating in its 2021 acquisition by ON Semiconductor (onsemi). As a wholly-owned subsidiary, GTAT provides onsemi with internal SiC crystal production capability, forming the foundation of onsemi's vertically integrated SiC supply chain spanning volume boule growth, substrate fabrication, epitaxy, device fabrication, and packaging.

GTAT's core technology centers on volume SiC boule crystal growth and substrate production, with a transition to 200mm SiC wafer production that delivers approximately 80% more chip output per wafer than smaller-diameter substrates. This capability underpins onsemi's EliteSiC product family, including MOSFETs, Schottky diodes, and power modules used in automotive electrification (EV powertrain, ADAS), industrial automation, energy infrastructure, and data center power applications. The subsidiary operates from Hudson, USA, with 501–1,000 employees, and its crystal and substrate output is consumed internally by onsemi rather than sold on the merchant market.

The business model shifted from merchant equipment and substrate sales to a captive supply model post-acquisition. Pricing is not publicly disclosed, and standalone revenue is no longer reported because GTAT is consolidated within onsemi. Prior to the acquisition, GTAT pursued a B2B model selling crystal growth equipment and SiC substrates to solar, LED, and semiconductor customers, with public-company funding rounds of approximately $50.2 million (2013) and $33.5 million (2010). Historical M&A activity — including Crystal Systems (2010, $78.75M), Confluence Solar (2011), and Twin Creeks Technologies (2012) — built the SiC and advanced crystal platform that ultimately attracted onsemi as a strategic acquirer.

GT Advanced Technologies firmographics

Firmographics
Name
GT Advanced Technologies
Legal name
GT Advanced Technologies
Website
https://gtat.com
Company type
Private
Founded year
1994
Operating status
Acquired
Headcount range
501–1,000 employees
Ownership category
akta.pro rank

GT Advanced Technologies industry classification

Industry
Product category
Silicon Carbide (SiC) Substrates
NAICS
Semiconductor Machinery Manufacturing (333242), Semiconductor and Related Device Manufacturing (334413)
SIC
Industrial Process Furnaces & Ovens (3567)
akta.pro primary industry
Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB)
akta.pro secondary industries
Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG), Power Modules (IGBT/MOSFET/SiC/GaN Modules) (HDAHAHAH)

Keywords

  • Silicon carbide substrates
  • Power semiconductor materials
  • Crystal growth equipment
  • SiC wafer production
  • Wide bandgap semiconductors

Where GT Advanced Technologies is headquartered

Location

Headquarters

HQ city
Hudson
HQ country
United States
HQ region
North America

Markets served

GT Advanced Technologies business model

Business model
GTM type
B2B
Offering type
Hardware or Manufacturing
Cost components
Operations, Technology or R&D, Personnel, Supply Chain, Infrastructure

GT Advanced Technologies product offering

Product offering

Core offering

GT Advanced Technologies (GTAT) specializes in Silicon Carbide (SiC) crystal growth and substrate production for power semiconductor applications. Following its 2021 acquisition by ON Semiconductor (onsemi), it provides end-to-end SiC capability spanning volume boule growth, substrate fabrication, epitaxy, device fabrication, and packaging. The company's manufacturing includes transition to 200mm SiC wafer production, enabling approximately 80% increased chip output per wafer.

Product overview

GT Advanced Technologies was acquired by ON Semiconductor in 2021 for internal SiC crystal production. The company operates as part of onsemi's intelligent power and sensing technologies portfolio, providing vertical integration for Silicon Carbide (SiC) power semiconductors. GT Advanced Technologies' SiC capabilities enable onsemi to offer end-to-end SiC solutions from raw material growth through finished device manufacturing, supporting the production of MOSFETs, Schottky diodes, and power modules for automotive, industrial, and energy infrastructure applications.

Differentiator

Problem solved

Functional benefit

Products and services

  • GT Advanced Technologies SiC Crystal Production

Companies that use GT Advanced Technologies

Customer profile

Ideal customer profiles2 records

GT Advanced Technologies technology and API

Technology

Technology focussed Yes

API detail

Has API
No
API docs
API detail

Core technology

AI maturity

App detail

Feature3 records

GT Advanced Technologies partnerships and signals

Strategic signal

Partnerships

One partnership is on record.

  • ON Semiconductor (onsemi)coreStrategic or Co-development Partner · 1 January 2021onsemi acquired GT Advanced Technologies in 2021 specifically to gain internal Silicon Carbide (SiC) crystal production capability. This strategic acquisition transformed onsemi into a vertically integrated SiC supplier with end-to-end capability from substrate through device packaging, enabling supply chain security and cost efficiency for SiC power semiconductors targeting automotive electrification, industrial automation, and AI data center markets.

Recent moves6 records

Expansion highlights3 records

GT Advanced Technologies competitors and assessment

Company assessment

Direct peers

  • Wolfspeed: Wolfspeed is the most direct competitor to GTAT in the SiC substrate and device market, operating its own vertically integrated SiC supply chain from boule growth through power devices. Both compete on the same merchant substrate customer relationships and overlapping automotive and industrial power conversion end markets.
  • Coherent (formerly II-VI): Coherent is a major merchant SiC substrate producer serving power-device fabs worldwide, including through 150mm and 200mm wafer programs. GTAT competes head-to-head with Coherent's SiC substrate business for the same automotive and industrial power semiconductor customers that onsemi supplies.
  • ROHM Semiconductor: ROHM has invested in fully integrated SiC supply chain, including substrate acquisition activity, and is one of the most aggressive vertically integrated SiC device competitors to the onsemi/GTAT combination. Both target the same automotive inverter and industrial power conversion sockets.
  • Resonac (Showa Denko): Resonac is a leading SiC epitaxial wafer supplier and merchant substrate producer competing directly with GTAT's SiC substrate output. Both serve the same SiC power device value chain and overlapping EV and industrial power customers.
  • SK Siltron CSS: SK Siltron acquired the former DuPont SiC substrate business and is one of the leading merchant SiC substrate suppliers. It competes with GTAT on SiC wafer supply for the same power-device customers and is also scaling 200mm SiC wafer programs.

Emerging players

  • SICC (Shanghai SiC): SICC is a Chinese SiC substrate manufacturer scaling rapidly with domestic Chinese supply chain support. While currently smaller, SICC represents a competitively priced SiC substrate source that overlaps GTAT's served merchant and captive markets.
  • Soitec: Soitec is a semiconductor engineered substrate producer (notably SOI) and has publicly explored SiC substrate technologies. While not a direct head-to-head SiC competitor today, Soitec represents a potential adjacent entrant in advanced engineered substrates for power applications overlapping GTAT's roadmap.

Broad incumbents

  • STMicroelectronics: STMicroelectronics is a vertically integrated SiC power device manufacturer with internal substrate sourcing. While it does not run SiC boule growth at the same scale as GTAT, it competes for the same automotive design wins with SiC MOSFETs and modules using substrates sourced largely from Coherent, Resonac, and other merchant suppliers.
  • Infineon Technologies: Infineon is a leading SiC power device supplier serving automotive and industrial customers. It competes with onsemi/GTAT on the device side and sources SiC substrates from merchant suppliers that compete with GTAT's substrate business.

Others

  • AIXTRON: AIXTRON manufactures MOCVD and CVD deposition equipment used in SiC and GaN epitaxy and crystal growth. While upstream rather than directly competing on substrates, AIXTRON's equipment enables the same SiC value chain GTAT operates within.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat4 records

Key risks5 records

Key highlights6 records

Customer concentration

GT Advanced Technologies social profiles

Digital presence

GT Advanced Technologies financial estimates

Financial estimate

Revenue estimate

Valuation estimate

GT Advanced Technologies leadership team

Management profile

Number of profiles

Profiles6 records

GT Advanced Technologies funding detail

Funding detail

Funding overview

Funding rounds2 records

Investors

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

GT Advanced Technologies M&A and investment

M&A and investment

M&A3 records

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about GT Advanced Technologies

What does GT Advanced Technologies do?

GT Advanced Technologies (GTAT) specializes in Silicon Carbide (SiC) crystal growth and substrate production for power semiconductor applications. Following its 2021 acquisition by ON Semiconductor (onsemi), it provides end-to-end SiC capability spanning volume boule growth, substrate fabrication, epitaxy, device fabrication, and packaging. The company's manufacturing includes transition to 200mm SiC wafer production, enabling approximately 80% increased chip output per wafer.

Is GT Advanced Technologies a public or private company?

GT Advanced Technologies is a private company. It is classified as corporate owned and is currently acquired.

When was GT Advanced Technologies founded?

GT Advanced Technologies was founded in 1994. It employs 501 to 1,000 people.

Where is GT Advanced Technologies based?

GT Advanced Technologies is headquartered in Hudson, United States, in the North America region.

Who are GT Advanced Technologies's main competitors?

Direct peers on record are Wolfspeed, Coherent (formerly II-VI), ROHM Semiconductor, Resonac (Showa Denko) and SK Siltron CSS. Emerging players are SICC (Shanghai SiC) and Soitec. Broad incumbents are STMicroelectronics and Infineon Technologies. AIXTRON is listed as an others.

Does GT Advanced Technologies have an API?

No public API is recorded for GT Advanced Technologies.

What industry is GT Advanced Technologies in?

GT Advanced Technologies's product category is Silicon Carbide (SiC) Substrates. Its primary akta.pro industry code is HDAHAGAB, Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire), with a secondary code of HDAHAHAG, Wide-Bandgap Power Devices (SiC/GaN Discretes). Its NAICS code is 333242 and its SIC code is 3567.

Unlock the full company data

50 free credits on sign-up, no credit card required.

Contact sales
Live signals
PrtimesSapphire Technology Market to Reach US$ 17.53 Billion by 2034 at 6.68% CAGR – PR TimesThe Insight Partners reports that the global Sapphire Technology Market was valued at US$ 10.45 billion in 2025 and is projected to reach US$ 17.53 billion by 2034, growing at a CAGR of 6.68%. This expansion is driven by rising demand for high-performance electronics, advancements in LED technology, and increasing applications in optoelectronics and aerospace. Key manufacturers such as Kyocera Corporation and GT Advanced Technologies are focusing on improving crystal growth and substrate quality to meet these industry needs.FinancialContent Business PageThe Power Architect: A Deep Dive into onsemi’s (ON) Strategic Transformation and SiC LeadershipON Semiconductor (onsemi) has executed a major strategic transformation over the past five years, shedding low-margin commodity businesses and positioning itself as a leader in Silicon Carbide (SiC) power semiconductors and intelligent sensing, anchored by the 2016 acquisition of Fairchild Semiconductor and the 2021 acquisition of GT Advanced Technologies for internal SiC crystal production. Despite a cyclical revenue decline from $8.3 billion in 2023 to approximately $6.0–6.5 billion in late 2025 due to automotive market weakness, the company achieved significant margin improvement through its "Fab-Right" strategy, maintaining 38-45% non-GAAP gross margins while generating over $1.4 billion in free cash flow in 2025. The company's transition to 200mm SiC wafer production in 2025 represents a critical cost-reduction milestone, with full utilization expected at its Bucheon, South Korea and Roznov, Czech Republic facilities by late 2026.onsemiMeeting the Demand for Next-Generation Silicon Carbide Devicesonsemi released new 1700V EliteSiC MOSFET devices and D1 range 1700V SiC Schottky diodes designed for high-voltage applications in solar and electric vehicles, featuring specifications such as operation at junction temperatures up to 175°C and RDS(ON) of 28 mΩ. The company stated it acquired GT Advanced Technology to become a large-scale SiC supplier with end-to-end capability, including volume boule growth, substrate, epitaxy, device fabrication, and packaging solutions. onsemi's roadmap includes significant increases in substrate, device, and module capacity by 2024 to address ongoing supply chain constraints in the SiC market.NH Business ReviewGT Advanced Technologies acquired by Arizona semiconductor companyonsemi has agreed to acquire GT Advanced Technologies for $415 million to secure its silicon carbide production capabilities. The deal marks a significant investment by the semiconductor manufacturer into materials essential for electric vehicles and renewable energy storage. Regulatory approval is required, with the transaction expected to close in the first half of next year.GlobeNewswireInfineon Expands Supply Base for Silicon Carbide with GT Advanced TechnologiesInfineon and GT Advanced Technologies signed a five-year supply agreement for silicon carbide boules. The deal secures a diversified supplier base for SiC wafers, supporting Infineon's growing demand in industrial and automotive applications. GTAT's boules will enable Infineon to meet rising customer demand with high-quality material standards.GlobeNewswireBob Krysiak Joins GT Advanced Technologies Board of DirectorsBob Krysiak was appointed to GT Advanced Technologies' board of directors, effective immediately. He brings over 30 years of experience at STMicroelectronics, including as executive vice president and general manager of the Americas region. The appointment aims to strengthen GTAT's leadership in silicon carbide materials.PR NewswireBernstein Litowitz Berger & Grossmann LLP Announces Class Action Settlement Involving Publicly Traded GT Advanced Technologies Inc. SecuritiesA proposed $3.5 million settlement has been reached between Apple Inc. and the plaintiff class in a securities litigation concerning GT Advanced Technologies Inc. This agreement, pending court approval at a hearing scheduled for June 15, 2020, resolves all remaining claims against Apple in the action. Combined with two prior settlements totaling over $36 million, the total aggregate recovery for the class reaches approximately $40.2 million.GlobeNewswireGT Advanced Technologies and ON Semiconductor Sign Agreement for Production and Supply of Silicon Carbide MaterialGT Advanced Technologies and ON Semiconductor signed a five-year agreement worth up to $50 million for GTAT to supply its CrystX silicon carbide material to ON Semiconductor. The material will be used to make SiC wafers for applications like electric vehicles and solar energy storage.GlobeNewswireGT Advanced Technologies Achieves ISO-9001:2015 CertificationGT Advanced Technologies achieved ISO-9001:2015 certification through TÜV Rheinland auditors. CEO Greg Knight said the company reached volume production and certification in under a year. The certification supports demand for silicon carbide in power electronics and electric vehicles.GlobeNewswireGT Advanced Technologies and GlobalWafers SignGT Advanced Technologies and GlobalWafers signed a long-term agreement to combine their expertise for silicon carbide wafer supply. GlobalWafers will add 150mm silicon carbide wafers, manufactured from GTAT's bulk SiC crystal, to increase supply and lower costs for EV and power electronics industries.