Flosfia
FLOSFIA is a Kyoto University spin-off developing the world's first commercial corundum-structured alpha gallium oxide (α-Ga₂O₃) power semiconductors and proprietary Mist Dry CVD deposition technology, serving automotive, industrial, HVAC, and consumer electronics OEMs with diodes, MOSFETs, JBS devices, and embedded power modules.
- Company typePrivate
- Founded2011
- HeadquartersKyoto, Japan
- Headcount51–100
- GTM typeB2B
- OfferingHardware or Manufacturing
What Flosfia does
FLOSFIA is a Kyoto University spin-off (founded 2011 as ROCA, renamed 2014) developing the world's first commercially oriented corundum-structured alpha gallium oxide (α-Ga₂O₃) power semiconductor devices. The company's technology stack combines the α-Ga₂O₃ material platform with a proprietary atmospheric-pressure Mist Dry (mist CVD) thin-film deposition process, which together deliver world-record low on-resistance (0.1 mΩ·cm² for SBDs, 86% below SiC equivalents), 600V-1700V breakdown voltage capability, and a recently demonstrated 10A+ normally-off MOSFET using the world's first p-type semiconductor for gallium oxide (α-(IrGa)₂O₃, co-developed with JSR). The product portfolio spans GaO® SBDs, MOSFETs, JBS diodes, mold-less embedded power modules, and Mist Dry deposition services for diverse thin-film applications.
The company operates a fab-lite model with its own mother factory near Kyoto University Katsura Campus (operational since July 2019, planned capacity of over 2 million units/month) and a 4-inch wafer manufacturing platform completed in December 2025. FLOSFIA serves automotive/EV (Denso for PCUs/inverters), industrial equipment (Mitsubishi Heavy Industries, Yaskawa Electric for motors/robotics), HVAC (Daikin Industries), and broader power electronics markets. Revenue mechanics combine direct enterprise device sales, milestone-based co-development contracts, IP/patent licensing, and deposition service fees, with samples shipped since 2019 and mass production targeted post-2026.
The company has raised approximately JPY 42.1 billion (~$280M USD) cumulatively across Series A through E from a mix of venture capital (UTEC, Eight Roads Ventures Japan, Future Venture Capital) and strategic corporate investors (Denso, Mitsubishi Heavy Industries, Daikin Industries, JSR, DBJ, Yaskawa Electric, Sanyo Chemical). Distribution is handled through domestic partners Hakuto Co., Ltd. and Kyoei Sangyo Co., Ltd., plus a web-based ordering platform for power module customization. The company maintains ISO 9001/14001 certifications, J-Startup designation, and a portfolio of over 700 patent applications (approximately 400 granted). Leadership transitioned in March 2025 with Takashi Shinohe (former SiC/IGBT leader at a major semiconductor manufacturer) assuming the presidency.
Flosfia firmographics
Firmographics- Name
- Flosfia
- Legal name
- 株式会社FLOSFIA
- Website
- https://flosfia.com
- Company type
- Private
- Founded year
- 2011
- Operating status
- Operating
- Headcount range
- 51–100 employees
- Short description
- FLOSFIA is a Kyoto University spin-off developing the world's first commercial corundum-structured alpha gallium oxide (α-Ga₂O₃) power semiconductors and proprietary Mist Dry CVD deposition technology, serving automotive, industrial, HVAC, and consumer electronics OEMs with diodes, MOSFETs, JBS devices, and embedded power modules.
- Ownership category
- akta.pro rank
Where Flosfia is headquartered
LocationHeadquarters
- HQ city
- Kyoto
- HQ country
- Japan
- HQ region
- Asia
Offices2 records
Markets served
Flosfia business model
Business model- GTM type
- B2B
- Offering type
- Hardware or Manufacturing
- Cost components
- Technology or R&D, Personnel, Operations, Supply Chain, Marketing or Sales, Infrastructure
Revenue model
- GaO Power Device Sales (SBD, JBS, MOSFET): Sales of gallium oxide power semiconductor devices (SBDs, JBS diodes, MOSFETs) and power modules. Products sold directly and through domestic distribution partners Hakuto and Kyoei Sangyo. Samples shipped from 2019; mass production planned post 2026.
- Deposition Solutions / Mist Dry Technology Licensing: Providing mist dry thin-film deposition services (from single-wafer test runs), joint process development, and licensing of mist dry technology for diverse applications including solar cells, fuel cells, corrosion-resistant coatings, medical devices, and ceramic components.
- IP Licensing and Technology Licensing: Licensing of intellectual property portfolio including material, device structure, process, and module technologies to domestic and international partners. Strategy includes epitaxial wafer supply and patent licensing as part of partnership agreements.
- Strategic Co-development Contracts: Milestone-based co-development agreements with strategic partners (e.g., Denso, Mitsubishi Heavy Industries, Daikin, JSR) for joint product development, providing upfront and milestone payments that serve as a revenue stream during pre-commercialization phase.
Pricing tiers
| Model | Billing | Price |
|---|---|---|
| Other | Multi-year contract | GaO power semiconductor products and deposition solutions are sold via direct sales inquiry and distributor engagement. No public pricing tiers are published. |
Go-to-market motion3 records
Distribution channels4 records
Marketing channels5 records
Flosfia product offering
Product offeringCore offering
Flosfia manufactures and sells gallium oxide (α-Ga2O3) power semiconductor devices — Schottky Barrier Diodes (SBD), JBS diodes, MOSFETs, and embedded power modules — for automotive, industrial, and consumer electronics applications. The company also offers Mist Dry deposition services, licensing of its proprietary atmospheric-pressure mist CVD thin-film deposition technology, and intellectual property licensing to partners worldwide.
Product overview
Flosfia offers a portfolio of gallium oxide (α-Ga₂O₃) power semiconductor products and deposition technology services. The core product line includes GaO® SBD (Schottky Barrier Diodes), GaO® MOSFETs, GaO® JBS Diodes, and GaO® Embedded Power Modules for power electronics applications. These products leverage corundum-type gallium oxide's superior material properties (10x higher breakdown field than SiC) to achieve up to 86% loss reduction in power conversion. Supporting the device business is the Mist Dry® Deposition Solutions service, which provides non-vacuum thin film formation technology for various applications. The company also develops specialized components including thermistors and micro temperature fuses.
Differentiator
Problem solved
Functional benefit
Products and services
- GaO Power Device (SBD) Gallium oxide (α-Ga2O3) Schottky Barrier Diode for power semiconductor applications. Offers ultra-low on-resistance of 0.1 mOhm-cm² and withstand voltages from 600V to 1700V, enabling up to 86% loss reduction compared to SiC alternatives. Targeted at automotive inverters, industrial motor drives, and power supplies.
- GaO MOSFET Gallium oxide power transistor (MOSFET) with normally-off operation. Achieved channel mobility of 72 cm²/Vs, exceeding SiC performance. Supports 600V-class devices with low on-resistance, with demonstrated drain current of 14.3A at 15V gate voltage.
- GaO JBS Diode Junction Barrier Schottky (JBS) diode using α-(IrGa)2O3 P-type semiconductor. Improved turn-on voltage from 1.4V to 0.9V compared to standard SBD, enabling higher efficiency in power conversion applications.
- GaO Embedded Power Module Mold-less power module with embedded power devices. Achieves ultra-compact form factor at 1/100 volume of conventional modules. Features low inductance design optimized for high-speed switching, with Fail Operation capability through embedded micro thermal fuse.
- Deposition Solutions (Mist Dry) Non-vacuum film formation service using proprietary Mist Dry technology. Supports metal oxide films, metal films, and organic films. Offers test deposition from single wafers and collaborative development for custom applications including solar cells, fuel cells, corrosion-resistant coatings, and medical devices.
Companies that use Flosfia
Customer profileNamed customers7 records
Segments5 records
Ideal customer profiles3 records
Flosfia technology and API
TechnologyTechnology focussed Yes
API detail
- Has API
- No
- API docs
- API detail
Core technology
AI maturity
App detail
Feature6 records
Flosfia partnerships and signals
Strategic signalPartnerships
Ten partnerships are on record, tiered minor, core and major.
- Intertek CertificationminorFLOSFIA obtained ISO 9001 and ISO 14001 certifications through Intertek Certification, a leading ISO certification body.
- Sanyo Kasei IndustriescoreJoint development of micro thermal fuses with Fail Operation capability using FLOSFIA's substrate-embedded module technology and Sanyo Kasei's proprietary fuse element, enabling miniaturized thermal protection for power electronics and EVs. Sanyo Kasei also made a capital investment.
- Hakuto Co., Ltd.majorHakuto Co., Ltd. serves as a domestic sales distribution partner for FLOSFIA's GaO power device products in Japan, leveraging its established sales channels and technical sales capabilities for industrial and electronics manufacturers.
- Kyoei Sangyo Co., Ltd.majorKyoei Sangyo Co., Ltd. serves as a domestic sales distribution partner for FLOSFIA's GaO power device products in Japan alongside Hakuto, expanding market coverage for industrial and consumer electronics customers.
- JSRcoreJoint development of new iridium-based deposition materials for mass production of p-type semiconductor alpha-(IrGa)2O3, solving key production challenges including crystal growth rate (10x improvement), trench coverage, and material consumption reduction.
- DensocoreFLOSFIA and Denso entered a joint development agreement for corundum-structured alpha-gallium oxide (alpha-Ga2O3) power semiconductor devices for electrified vehicle applications, targeting automotive power control units and inverters. Denso also made a strategic capital investment in FLOSFIA's Series C funding round to support this technology development.
- Kyoto UniversitycoreFLOSFIA was spun off from Kyoto University (Prof. Shizuo Fujita's laboratory) and maintains ongoing joint research with Prof. Fujita and co-founder Dr. Kentaro Kaneko. The university collaborated on alpha-Ga2O3 material development, p-type semiconductor research, and wafer technology.
- Saga UniversityminorSaga University joined FLOSFIA and Kyoto University in the NEDO 'Strategic省 Energy Technology Innovation Program' for 600V withstand voltage SBD development.
- National Institute for Materials Science (NIMS)minorFLOSFIA collaborated with NIMS as part of the NEDO 'Energy/Environment New Technology Guiding Program' (2014-2015), alongside Kyoto University, Kochi University of Technology, and the University of Tokyo.
- Mitsubishi Heavy IndustriescoreStrategic co-development partnership for GaO power devices targeting industrial equipment applications. Mitsubishi Heavy Industries participated as an investor in Series C and Series E rounds, and also participates in the Defense Agency Security Technology Research Promotion System (JP004596).
Scale indicators10 records
Recent moves10 records
Expansion highlights6 records
Flosfia competitors and assessment
Company assessmentBroad incumbents
- STMicroelectronics: European semiconductor major with leading SiC MOSFET products and significant EV OEM design wins. Competes with FLOSFIA in automotive and industrial power conversion markets with mature, qualified SiC technology and global scale.
- Infineon Technologies: Global power semiconductor leader with strong SiC (CoolSiC) and GaN product lines serving automotive and industrial markets. Competes with FLOSFIA across the same end applications including EV traction inverters, on-board chargers, and industrial motor drives.
- Wolfspeed, Inc. Pure-play SiC power semiconductor leader with vertically integrated substrate-to-module manufacturing. Represents the primary incumbent that FLOSFIA's α-Ga2O3 technology aims to displace in EV and industrial power conversion applications.
- Renesas Electronics: Major Japanese semiconductor company with established IGBT and emerging SiC power device business. Comparable as a Japanese power semiconductor incumbent serving automotive and industrial customers in FLOSFIA's target markets.
- ROHM Co., Ltd. Major Japanese power semiconductor manufacturer with strong SiC product portfolio (including SiC MOSFETs and full SiC modules) targeting EV and industrial markets. Competes with FLOSFIA's α-Ga2O3 in the same power conversion applications, but at much larger scale with established automotive qualifications.
- Mitsubishi Electric: Japanese conglomerate with significant SiC power semiconductor operations and a key strategic investor/partner of FLOSFIA through Mitsubishi Heavy Industries. Competes in the same inverter and power module applications but with mature SiC and Si product lines.
Emerging players
- Navitas Semiconductor: US-based GaN power semiconductor company with significant traction in consumer electronics fast chargers and data center power supplies. Comparable as an emerging wide-bandgap semiconductor challenger to incumbents, though focused on GaN rather than Ga2O3.
Direct peers
- Tamura Corporation: Japanese electronics manufacturer with a power device business developing Ga2O3 Schottky barrier diodes. Comparable to FLOSFIA as a Japan-based Ga2O3 device developer with commercial sampling activity and similar target applications in power conversion.
- Novel Crystal Technology: Japan-based startup also developing gallium oxide (β-Ga2O3) power semiconductor substrates and devices. Direct competitor in the emerging Ga2O3 power semiconductor space, focused on epitaxial wafer technology. Although FLOSFIA uses corundum-structured α-Ga2O3 while NCT works with β-Ga2O3, they target overlapping customer applications in EV inverters and industrial power conversion.
Others
- Coherent Corp (formerly II-VI): Vertically integrated SiC substrate and power device manufacturer providing the foundation of the SiC ecosystem that FLOSFIA's α-Ga2O3 technology aims to disrupt. Relevant as the dominant supplier of 150mm/200mm SiC wafers that defines the cost benchmark FLOSFIA must beat.
Market position
Strengths5 records
Weaknesses5 records
Competitive moat5 records
Key risks6 records
Key highlights7 records
Customer concentration
Flosfia social profiles
Digital presenceFlosfia compliance and trust
Trust signalCompliance2 records
Flosfia financial estimates
Financial estimateRevenue estimate
Valuation estimate
Flosfia leadership team
Management profileNumber of profiles
Profiles4 records
Flosfia funding detail
Funding detailFunding overview
Funding rounds14 records
Investors22 records
Funding detail is available on the Subscription and Enterprise plan.Contact sales →
Flosfia M&A and investment
M&A and investmentM&A
Investments
M&A and investment is available on the Subscription and Enterprise plan.Contact sales →
Frequently asked questions about Flosfia
What does Flosfia do?
Flosfia manufactures and sells gallium oxide (α-Ga2O3) power semiconductor devices — Schottky Barrier Diodes (SBD), JBS diodes, MOSFETs, and embedded power modules — for automotive, industrial, and consumer electronics applications. The company also offers Mist Dry deposition services, licensing of its proprietary atmospheric-pressure mist CVD thin-film deposition technology, and intellectual property licensing to partners worldwide.
Is Flosfia a public or private company?
Flosfia is a private company. It is classified as venture growth investor backed and is currently operating.
When was Flosfia founded?
Flosfia was founded in 2011. It employs 51 to 100 people.
Where is Flosfia based?
Flosfia is headquartered in Kyoto, Japan, in the Asia region.
How does Flosfia make money?
Four revenue lines are on record. GaO Power Device Sales (SBD, JBS, MOSFET) is the primary driver. The others are deposition Solutions / Mist Dry Technology Licensing, IP Licensing and Technology Licensing and strategic Co-development Contracts.
Who are Flosfia's main competitors?
Broad incumbents on record are STMicroelectronics, Infineon Technologies, Wolfspeed, Inc., Renesas Electronics, ROHM Co., Ltd. and Mitsubishi Electric. Navitas Semiconductor is listed as an emerging player. Direct peers are Tamura Corporation and Novel Crystal Technology. Coherent Corp (formerly II-VI) is listed as an others.
Does Flosfia have an API?
No public API is recorded for Flosfia.