What Novel Crystal Technology does

Novel Crystal Technology, Inc. (株式会社ノベルクリスタルテクノロジー) is a privately held Japanese semiconductor materials company founded in October 2015 as a carve-out from Tamura Corporation and a technology transfer venture from the National Institute of Information and Communications Technology (NICT). The company develops, manufactures, and sells beta-gallium oxide (β-Ga2O3) single-crystal substrates, epitaxial wafers, and power devices — a wide-bandgap (4.8 eV) semiconductor positioned as a higher-voltage, lower-loss alternative to silicon carbide (SiC) and gallium nitride (GaN) for power electronics. Its product portfolio includes HVPE and MBE epitaxial wafers, 2-inch through 150 mm single-crystal substrates manufactured via EFG and Vertical Bridgman (VB) methods, and an emerging device line encompassing 1200 V Schottky barrier diodes, vertical MOSFETs, and inverted DI-MOS transistors. The company's research lineage runs through Tokyo University of Agriculture and Technology and includes collaborations with NICT, AIST, Shinshu University, Saga University, JFCC, and the University of Hyogo.

NCT's business model is hardware sales of β-Ga2O3 wafers and developmental devices, conducted through a direct sales department serving research institutions, universities, and corporate R&D groups globally. The company currently reports near-100% market share in the R&D segment for β-Ga2O3 substrates and is transitioning toward commercial mass production, with 150 mm substrate samples shipping as of March 2026, mass production targeted for 2029, and a 200 mm roadmap extending to 2035. Pricing is not publicly disclosed; engagement is sales-led via direct inquiry, supplemented by participation in industry conferences (IWGO, CSW, ISPSD, PCIM, DRC) and the Japan Society of Applied Physics. The strategic investor base — Tamura Corporation, Mitsubishi Electric, Rohm, AGC, JX Metals, Yaskawa Electric, and Taiyo Nippon Sanso — doubles as a vertically integrated value chain spanning materials, crystal-growth equipment, power devices, and end-equipment OEMs, with multiple NEDO and METI government grants layering non-dilutive funding onto the equity base.

Name

Novel Crystal Technology

Legal name

株式会社ノベルクリスタルテクノロジー

Website

https://novelcrystal.co.jp

Company type

Private

Founded year

2015

Operating status

Operating

Headcount range

11–50 employees

Short description

Novel Crystal Technology develops and manufactures beta-gallium oxide (β-Ga2O3) substrates, epitaxial wafers, and power devices for next-generation power electronics, supplying research institutions, universities, and corporate R&D groups globally with near-100% share of the R&D β-Ga2O3 wafer market.

Ownership category

akta.pro rank

Product category

Wide Bandgap Semiconductor Materials

NAICS

Semiconductor and Related Device Manufacturing (334413), Semiconductor and Other Electronic Component Manufacturing (33441)

SIC

Semiconductors & Related Devices (3674)

akta.pro primary industry

Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB)

akta.pro secondary industries

Epitaxy Materials & Services (Epi Wafers/MBE/MOCVD) (HDAHAGAC), Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG)

Keywords

• Gallium oxide substrates
• Epitaxial wafers
• Wide bandgap semiconductors
• Power semiconductor devices
• Crystal growth technology

Headquarters

HQ city

Sayama

HQ country

Japan

HQ region

Asia

Offices2 records

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Technology or R&D, Infrastructure, Operations, Supply Chain, Personnel

Revenue model

1. β-Ga2O3 Substrates Sales: Sale of β-gallium oxide single-crystal substrates in various sizes (2-inch, 100mm, 150mm) for research and development purposes. Currently all substrates are sold for R&D use, with near 100% market share in the R&D market segment.
2. Epitaxial Wafers Sales: Sale of β-Ga2O3 epitaxial wafers using HVPE and MBE methods. Includes various specifications for doping concentration and film thickness for different device applications.
3. Power Device Development: Development of gallium oxide power devices including Schottky barrier diodes (SBD) and MOSFET transistors, targeting commercialization for power electronics applications in EVs, renewable energy, and industrial equipment.

Go-to-market motion1 record

Distribution channels1 record

Marketing channels3 records

Core offering

Novel Crystal Technology develops, manufactures, and sells beta-gallium oxide (β-Ga2O3) single-crystal substrates and epitaxial wafers grown via proprietary HVPE, MBE, EFG, VB, and DG methods for use in next-generation wide-bandgap power semiconductor devices. Its products are sold to research institutions, universities, and power-electronics manufacturers for applications targeting 600 V to 12,000 V power conversion in EVs, renewable energy, rail, industrial, and data center systems.

Product overview

Novel Crystal Technology (NCT) is a leading developer, manufacturer, and supplier of β-Ga₂O₃ (beta-gallium oxide) substrates and epitaxial wafers for next-generation power devices. The product portfolio consists of three core offerings: β-Ga₂O₃ HVPE Epitaxial Wafers (grown using Hydride Vapor Phase Epitaxy), β-Ga₂O₃ MBE Epitaxial Wafers (grown using Molecular Beam Epitaxy), and β-Ga₂O₃ Substrates (single-crystal wafers in 2-inch, 100 mm, and 150 mm sizes). Additionally, NCT offers New Orientation Wafers with diverse crystal orientations and a Wafer User Manual for technical guidance. These products target the power semiconductor market, enabling high-voltage, low-loss power devices that surpass SiC and GaN in performance while being manufacturable at lower cost through melt growth methods.

Differentiator

Problem solved

Functional benefit

Products and services

• β-Ga2O3 HVPE Epitaxial Wafer Beta-gallium oxide epitaxial wafers grown using Hydride Vapor Phase Epitaxy (HVPE), available in various diameters including 6-inch, with controllable doping concentration and film thickness for power device fabrication. Targets power semiconductor manufacturers and researchers building Schottky barrier diodes and MOSFETs.
• β-Ga2O3 MBE Epitaxial Wafer Beta-gallium oxide epitaxial wafers grown using Molecular Beam Epitaxy (Ozone-MBE), offering high surface flatness and low carrier concentration control for high-purity thin film deposition. Used by research institutions and device developers requiring precise thin-film characteristics.
• β-Ga2O3 Substrate Single-crystal beta-gallium oxide substrates in 2-inch, 100 mm, and 150 mm (6-inch) diameters, manufactured using Edge-defined Film-fed Growth (EFG) and Vertical Bridgman (VB) methods. Sold to research institutions, universities, and power-electronics companies as the foundational wafer for β-Ga2O3 device production.
• New Orientation β-Ga2O3 Wafers Beta-gallium oxide wafers supplied in crystal orientations beyond the standard (001), giving device designers expanded flexibility for new power device architectures and experimental structures.
• Ampere-Class 1200 V β-Ga2O3 Schottky Barrier Diode (SBD) World-first ampere-class β-Ga2O3 Schottky barrier diode with 1200 V breakdown voltage and trench structure that reduces leakage current to 1/1000th. Developed for high-voltage, low-loss power conversion in EVs, renewable energy, and industrial equipment; recognized with the 28th Semiconductor of the Year 2022 Grand Prix.
• β-Ga2O3 Vertical MOSFET with Mg Guard Ring Structure Vertical β-Ga2O3 MOSFET incorporating an Mg ion-implanted guard ring structure, delivering a world-record Power Figure of Merit of 1.23 GW/cm2, 3.2x higher than competing institutions. Targets high-voltage power switching applications.

Quantifiable outcome

• β-Ga2O3 substrate manufacturing cost reduction to 1/10th using DG method
• +4 more outcomes

Segments6 records

Ideal customer profiles5 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature7 records

Partnerships

Eleven partnerships are on record, tiered minor and core.

• Kyma TechnologiesminorStrategic or Co-development Partner · 1 August 2025Strategic collaboration announced August 2025 to advance gallium oxide epitaxial wafers for next-generation power electronics. Kyma Technologies is a US-based company specializing in compound semiconductor materials.
• National Institute of Information and Communications Technology (NICT)coreStrategic or Co-development PartnerNCT was established as a technology transfer venture from NICT. The company was founded with technology transfer from NICT in 2015, making NICT a foundational research partner.
• Tokyo University of Agriculture and TechnologycoreStrategic or Co-development PartnerCore research partner alongside NICT and Tamura Corporation. Jointly developed halide vapor phase epitaxy (HVPE) technology for gallium oxide film formation. Professor Kumagai and Associate Professor Murakami pioneered the technology.
• Shinshu UniversitycoreStrategic or Co-development PartnerCollaborated on Vertical Bridgman (VB) method development for 6-inch β-Ga2O3 crystal growth. Shinshu University originated the VB method concept and developed it through initial stages before NCT took over for continued large-diameter development.
• National Institute of Advanced Industrial Science and Technology (AIST)coreStrategic or Co-development PartnerCollaborated on crystal quality evaluation using X-ray topography. AIST conducted evaluation and analysis of crystals made by both EFG and VB methods, comparing defect densities.
• Saga UniversitycoreStrategic or Co-development PartnerJoint development partner for 3rd generation β-Ga2O3 100mm epitaxial wafers. Collaborated to identify killer defect causes and reduce defect density to 1/10th of previous generation.
• Taiyo Nippon Sanso CorporationcoreTechnology or IntegrationCo-developed large-area HVPE epitaxial film growth equipment for 6-inch gallium oxide wafers. Taiyo Nippon Sanso developed the equipment hardware as part of NEDO project collaboration.
• National Research and Development Agency New Energy and Industrial Technology Development Organization (NEDO)coreStrategic or Co-development PartnerMajor government R&D funding agency supporting multiple NCT projects including strategic energy saving technology innovation programs, economic security important technology development programs, and other semiconductor development initiatives.
• Japan Aerospace Exploration Agency (JAXA)minorOthersCollaboration on research related to gallium oxide power device applications for aerospace and advanced mobility applications.
• Fine Ceramics Center (JFCC)minorStrategic or Co-development PartnerJointly developed crystal defect imaging technology using anomalous X-ray transmission topography. JFCC contributed to defect characterization and analysis methodology.
• University of HyogominorStrategic or Co-development PartnerCollaborated with JFCC and NCT on anomalous transmission X-ray topography for crystal defect imaging. Contributed to dislocation detection and classification in β-Ga2O3 crystals.

Scale indicators8 records

Recent moves8 records

Expansion highlights6 records

Broad incumbents

• Soitec: Soitec is a French engineered-substrate manufacturer with SmartCut technology for SiC and GaN wafers. Its materials-engineering approach to alternative substrates positions it as an adjacent peer exploring similar power-electronics material innovation.
• Wolfspeed: Wolfspeed is the US leader in SiC power semiconductors with vertically integrated substrate and device manufacturing. It represents the dominant incumbent wide-bandgap technology that NCT's Ga2O3 must compete against on cost and performance.
• Coherent Corp: Coherent (formerly II-VI) is a major US compound semiconductor materials supplier with significant SiC substrate capacity. It competes in the same upstream wide-bandgap materials space as NCT from a much larger commercial base.
• Infineon Technologies: Infineon is the global leader in power semiconductors with expanding SiC and GaN product lines. It defines the competitive landscape for next-generation power devices and represents a potential acquirer or licensing partner for Ga2O3 technology.
• ROHM Co., Ltd. ROHM is a leading Japanese power semiconductor manufacturer with a major SiC device business. It is also a strategic investor in NCT (May 2022), giving it both a competing incumbent role in power semiconductors and a financial stake in Ga2O3 disruption.
• Resonac Holdings (formerly Showa Denko): Resonac is a leading Japanese manufacturer of SiC epitaxial wafers and compound semiconductor materials. It is a direct upstream competitor in wide-bandgap wafer production with a much more mature SiC product line.
• Mitsubishi Electric: Mitsubishi Electric is a major Japanese power-electronics and IGBT module manufacturer. It led NCT's ¥950M round in July 2023 and represents both a downstream customer opportunity and a broad incumbent with overlapping power-device capabilities.

Direct peers

• Tamura Corporation: Tamura Corporation is the founding parent of NCT and a major Japanese manufacturer of electronic components and power semiconductors. It conducts parallel Ga2O3 crystal-growth and power-device research, making it both a strategic investor and the most directly comparable peer.
• Flosfia Inc. Flosfia is a Kyoto University spin-out developing corundum-structured α-Ga2O3 power devices and Schottky diodes. It is one of the few companies globally with commercial-stage Ga2O3 device offerings, directly competing with NCT in the same emerging wide-bandgap material category.
• Kyma Technologies: Kyma Technologies is a US-based compound semiconductor materials company specializing in GaN, AlN, and other wide-bandgap crystals. It has an active strategic collaboration with NCT on Ga2O3 epitaxial wafers announced in August 2025, making it both a partner and direct peer in the Ga2O3 materials space.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat7 records

Key risks5 records

Key highlights7 records

Customer concentration

• LinkedInlinkedin.com/company/novel-crystal-technology

Compliance1 record

Revenue estimate

Valuation estimate

Number of profiles

Profiles3 records

Funding overview

Funding rounds1 record

Investors1 record

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about Novel Crystal Technology