Name

United Monolithic Semiconductors

Legal name

United Monolithic Semiconductors S.A.S.

Website

https://ums-rf.com

Company type

Private

Founded year

1996

Operating status

Operating

Headcount range

51–100 employees

Ownership category

akta.pro rank

Product category

RF and Microwave Semiconductor MMICs (GaAs / GaN)

NAICS

Semiconductor and Other Electronic Component Manufacturing (33441), Semiconductor and Other Electronic Component Manufacturing (3344)

SIC

Semiconductors & Related Devices (3674)

akta.pro primary industry

RF, Microwave & Wireless ICs (HDAHAAAF)

akta.pro secondary industries

RF & Compound Semiconductor Foundries (GaAs/GaN/SiGe) (HDAHACAD), Microwave & RF Signal Chain ICs (Mixers/Detectors/Attenuators) (HDAHAMAL)

Keywords

• RF semiconductor foundry
• GaN MMIC design
• GaAs pHEMT foundry
• Microwave integrated circuits
• Multi-project wafer services

Headquarters

HQ city

Villebon-sur-yvette

HQ country

France

HQ region

Europe

Offices3 records

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Technology or R&D, Supply Chain, Operations, Personnel, Infrastructure, Marketing or Sales

Revenue model

1. Semiconductor Product Sales: Sale of standard catalog RF and microwave semiconductor products including amplifiers (LNA, MPA, HPA), multipliers, VCOs, oscillators, switches, and front-end modules
2. Foundry Services: Open foundry services allowing customers to manufacture custom MMIC designs using UMS's GaAs and GaN technologies, including Multi-Project Wafer (MPW) runs for prototyping
3. Custom Design Services: Joint development and testing of custom semiconductor components for specific customer applications, as seen in the Hensoldt partnership for GaN radar components

Pricing tiers

Go-to-market motion2 records

Distribution channels3 records

Marketing channels6 records

Core offering

UMS designs, manufactures and markets RF and millimeter-wave monolithic microwave integrated circuits (MMICs) based on proprietary GaAs and GaN process technologies, including low-noise, medium-power and high-power amplifiers, frequency multipliers, VCOs, power dividers and front-end modules. The company also operates an open foundry service with Multi-Project Wafer (MPW) runs, design kits for Keysight ADS and Cadence AWR, and back-end services such as on-wafer testing and plastic QFN packaging. Applications span defense, space, telecom, satcom, automotive and ISM markets.

Product overview

UMS designs, manufactures and markets leading-edge RF and millimeter-wave integrated circuits (ICs) and provides advanced foundry services on GaAs and GaN technologies. The product portfolio includes discrete components and foundry services spanning multiple technology nodes and frequency bands. The discrete product line encompasses amplifiers (LNA, MPA, HPA, Driver Amplifiers), frequency multipliers, VCOs/oscillators, switches, power dividers/combiners, and RF front-ends across L-band through W-band frequencies. Foundry services include open-access GaAs and GaN MMIC fabrication, Multi-Project Wafer (MPW) runs, Process Design Kits (PDKs) for Cadence and Keysight tools, and back-end services (on-wafer testing, dicing, QFN packaging). The GH10-10 0.1-µm GaN technology platform represents the latest advancement for high-frequency applications. UMS serves defense, aerospace, space, telecom, satcom, automotive, and industrial markets globally.

Differentiator

Problem solved

Functional benefit

Products and services

• CHA2353-99F 46-52 GHz Low Noise Amplifier with AGC Three-stage monolithic Low Noise Amplifier with 24 dB linear gain, 30 dB Adjustable Gain Control and 3.5 dB Noise Figure across 46-52 GHz, built on a GaAs pHEMT process evaluated for space; intended for millimeter-wave radar, satcom and instrumentation systems.
• CHA8454-99F 10W 37.5-43.5 GHz GaN High Power Amplifier Three-stage GaN-on-SiC HEMT High Power Amplifier delivering 10 W saturated output power with >24% PAE across 37.5-43.5 GHz; designed for space, military and telecom applications, available in bare die.
• CHA8315-99F 15-18 GHz GaN High Power Amplifier Monolithic GaN HEMT High Power Amplifier covering 15-18 GHz with 43.5 dBm output power, 45% PAE and 23 dB small-signal gain; intended for defense radar and electronic warfare systems, available as die.
• GH10-10 0.1-µm GaN Technology Platform 0.1-µm GaN HEMT process technology platform enabling high-frequency, high-efficiency RF and millimeter-wave MMICs, qualified for operation beyond V band with results of >46% PAE at 45 GHz (11 dB linear gain, 2.5 W.mm-1) and 31-33% PAE at 60 GHz.
• CHX2192-99F V-Band Frequency Multiplier Monolithic by-2 frequency multiplier covering 27-33 GHz input and 54-66 GHz output, built on a 0.15 µm pHEMT process, for millimeter-wave LO chains in defense and commercial communication systems.
• CHA3023-99F 1-18 GHz Travelling Wave Amplifier Broadband cascode travelling wave amplifier covering 1-18 GHz, built on a 0.25 µm pHEMT process, available as bare die for electronic warfare, instrumentation and broadband communication systems.
• CHV3241-QDG K-Band HBT VCO with Divider Fully integrated K-band HBT VCO with X-band push-push oscillator, K-band buffer amplifier and divide-by-512 output, on InGaP HBT technology, supplied in a 24-lead RoHS-compliant QFN4x4 package.
• CHW4212-QKA 2-Way 8-22 GHz Power Divider/Combiner Wideband 2-way 0° power divider/combiner covering 8-22 GHz in a 2x2 mm RoHS SMD package, for phased-array radars, 5G, satcom and test & measurement.
• CHX3068-QDG Ka-Band Frequency Multiplier Ka-band monolithic frequency multiplier IC for DVB-RCS telecommunications, supplied in a lead-free SMD package.
• CHX2091-99F 36-44 GHz Cascadable By-2 Multiplier Cascadable by-2 frequency multiplier monolithic circuit for 36-44 GHz chipset applications, for military to commercial communication systems.
• CHX1162-QDG E-Band Time-Two Multiplier Packaged monolithic time-two multiplier with input and output buffers for E-band LO chains, on a 0.15 µm pHEMT process, in a standard SMD package with ESD protection.
• CHA3801-99F L-Band LNA for Space Applications L-Band Low Noise Amplifier monolithic circuit with active bias network and high input-power protection, dedicated to space applications.
• CHA2411-QDG K-Band LNA K-band low noise amplifier providing 26 dB gain with 2.5 dB noise figure from a single +5 V supply, covering 20-25 GHz.
• CHA5005-QDG 0.9-1.8 GHz Driver Amplifier (QFN) Monolithic one-stage driver amplifier producing 26.5 dBm output power with 33% PAE at 1 dB gain compression across 0.9-1.8 GHz; packaged QFN version of CHA5005-99F for military to commercial communication systems.
• CHA4220-QGG 0.1-20 GHz Distributed Driver Amplifier (QFN) Distributed driver amplifier covering 0.1-20 GHz with 17 dB gain and 3 dB NF, for electronic warfare, X/Ku point-to-point radio and test instrumentation, in a 5x5 QFN package.
• CHA2362-99F 26-40 GHz Wideband LNA Three-stage wideband low noise monolithic amplifier providing 22 dB gain and 2 dB noise figure across 26-40 GHz, for military to commercial communication systems.
• CHA2050-QDG 17-21.5 GHz GaAs LNA Three-stage GaAs Low Noise Amplifier covering 17-21.5 GHz with 1.3 dB noise figure and 26 dB gain, for Satcom applications, in a QFN 4x4 plastic package.
• CHA2368-98F 50-71 GHz LNA Four-stage monolithic Low Noise Amplifier exhibiting 21 dB linear gain and 3.5 dB noise figure across 50-71 GHz, with ESD protections, on a 0.1 µm pHEMT process with BCB layer protection.
• CHA8282-99F 27.5-31 GHz 10W GaN HPA Three-stage GaN High Power Amplifier covering 27.5-31 GHz with 10 W output power, 33% PAE and 27 dB small-signal gain; for Satcom applications, available as bare die.
• CHA8262-99F 27.5-31.5 GHz 12W GaN HPA Three-stage monolithic GaN High Power Amplifier delivering 12 W output power with >25% PAE across 27.5-31.5 GHz, for SatCom uplink and 5G communication applications.
• CHA8362-99F 26.5-31 GHz 25W GaN HPA Three-stage High Power Amplifier covering 26.5-31 GHz with 25 W saturated output power, 30% PAE, 40 dBm linear power and -33 dBc ACPR; for SatCom and 5G applications.
• CHA8254-99F 17.3-20.3 GHz GaN Doherty Power Amplifier Three-stage GaN Doherty Power Amplifier in 17.3-20.3 GHz band providing 10 W output power with 31% PAE (Doherty architecture enabling 27% PAE at 6 dB back-off); dedicated to space applications.
• CHA4252-QKB 17.2-21.3 GHz Medium Power Amplifier Three-stage Medium Power Amplifier covering 17.2-21.3 GHz with 25 dBm output power, 30% PAE and 30 dB gain, designed for space applications, in a QFN plastic package.
• CHA6354-QQA 27.5-30 GHz 4W GaN HPA with Integrated Switch Three-stage monolithic GaN High Power Amplifier reaching 4 W output power over 27.5-30 GHz with an integrated SPDT switch, in a 28-lead QFN 5x4 SMD package.
• CHA6282-QCB 17.3-21.5 GHz 4W GaN HPA for Space Three-stage GaN High Power Amplifier covering 17.3-21.5 GHz with 4 W output power, 28% PAE and >30 dB small-signal gain, in a low-cost SMD RoHS plastic package, dedicated to space applications.
• Foundry Training Programs Regular paid and free training courses covering GaAs and GaN technologies, design flow, layout skills, CAD demonstrations with Keysight and Cadence tools, LNA/HPA/mixer design techniques, and space qualification.
• GaAs Foundry Services Open foundry services for GaAs pHEMT, HBT, MESFET and Schottky diode technologies, including design kits, PDKs, Multi-Project Wafer (MPW) runs and back-end services for customer MMIC designs.
• GaN Foundry Services Open foundry services for GaN HEMT technologies including GH10, GH15 and GH25 platforms, supporting high-power and high-frequency MMIC fabrication for defense, aerospace, telecom and space applications.
• Multi-Project Wafer (MPW) Shared Foundry Runs Shared foundry runs allowing different customer projects on a single wafer; cost-effective prototyping approach for institutes, labs, research centers and universities. Participants receive 20 diced and untested MMICs.
• QFN Packaging Services Standard molded plastic QFN packaging for GaN and GaAs MMICs, offering packages from 3x3 mm² to 7x7 mm² with associated ADS models, available for production and prototyping runs.
• On-Wafer RF Testing Services Automated on-wafer testing solutions for circuit characterization and sorting from 1 to 110 GHz; 100% functional on-wafer tests available, including S-parameters, DC, noise, CW or pulsed power.
• Custom MMIC Design Services Joint development and testing of custom semiconductor components tailored to specific customer applications, as exemplified by the Hensoldt partnership for GaN radar components.

Quantifiable outcome

• GH10-10 technology achieves >46% PAE at 45 GHz with 11dB linear gain and 2.5W.mm-1 output power
• +2 more outcomes

Named customers3 records

Segments5 records

Ideal customer profiles4 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature8 records

Partnerships

Four partnerships are on record, tiered core and strategic.

• HensoldtcoreStrategic or Co-development Partner · 18 March 2026Long-term supply agreement through 2030 for 900,000 gallium nitride semiconductor components for radar systems. Components are jointly developed and tested, then integrated into Hensoldt's radar platforms, particularly the Spexer radar family. The agreement aims to strengthen supply chain resilience and expand production capacity as global demand for advanced sensor and radar technologies continues to rise.
• CNES (Centre National d'études spatiales)strategicStrategic or Co-development Partner · 22 May 2025CNES successfully evaluated UMS's plastic QFN platform designed for GaN MMICs for use in space applications. This evaluation led to inclusion in ESA's European Preferred Parts List (EPPL) Note 19.
• Richardson RFPDcoreChannel Partner/ Reseller/ DistributorDistribution partnership for UMS products; Richardson RFPD displays and sells UMS components and features UMS products at trade shows like SatShow 2026 (Booth #3131)
• EuropracticecoreChannel Partner/ Reseller/ DistributorStrategic partnership making UMS processes accessible to academic and research teams in Europe through Europractice's gateway for microelectronics access, with optimized pricing and secure framework for prototyping III-V circuits including packaging

Scale indicators6 records

Recent moves6 records

Expansion highlights6 records

Direct peers

• OMMIC: French GaAs and GaN MMIC foundry and product company offering open foundry services and catalog MMICs. Most direct comparable to UMS given shared French/EU base, GaAs/GaN process portfolio, foundry model, and defense/aerospace customer focus.

Emerging players

• RFHIC Corporation: Korean GaN and GaAs semiconductor specialist focused on high-power amplifiers for defense and wireless infrastructure. Competes with UMS in GaN HPAs, particularly for radar and 5G applications.
• Custom MMIC: US-based fabless designer of GaAs and GaN MMICs offering catalog amplifier, mixer, multiplier, and VCO products. Comparable catalog breadth and frequency-band coverage to UMS in the commercial/defense RF market.
• Sumitomo Electric (Semiconductor): Japanese supplier of GaAs and GaN devices for satellite communications and defense. Comparable niche in GaN HPAs for satcom ground terminals and space applications.

Broad incumbents

• Qorvo: Large US-listed RF semiconductor leader with GaN, GaAs, and pHEMT products serving defense, telecom, and IoT. Directly competes with UMS in GaN HPAs for defense radar and broad portfolio RF solutions.
• MACOM Technology Solutions: US-based RF, microwave, and photonic semiconductor company with a strong GaN-on-SiC catalog and foundry services. Competes head-to-head with UMS in defense and satcom GaN power amplifiers and now operates the Wolfspeed RF business.
• Wolfspeed (RF Business): Pre-eminent GaN-on-SiC wafer and device supplier whose RF business was acquired by MACOM. Comparable to UMS in GaN MMIC and foundry offerings with strong positioning in defense and telecom.
• Infineon Technologies (RF Power): German semiconductor giant with a GaN-on-SiC RF power business serving defense, telecom, and industrial markets. Strong European incumbent comparable to UMS on regional positioning and defense end-market exposure.
• Mitsubishi Electric (Semiconductor): Major Japanese supplier of GaN HEMT devices and MMICs for defense radar and satcom. Comparable broad incumbent in the same GaN high-power amplifier market UMS serves with Hensoldt and space customers.

Regional players

• Renesas (Mercury Systems / former Renesas RF): RF/microwave semiconductor offerings via defense-focused acquisitions serve US defense and aerospace primes. Comparable GaAs/GaN MMIC catalog with strong defense end-market overlap, but primarily US-domiciled customer base.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat5 records

Key risks5 records

Key highlights7 records

Customer concentration

• LinkedInlinkedin.com/company/ums-united-monolithic-semiconductors
• Xx.com/UMS_Foundry

Compliance1 record

Revenue estimate

Valuation estimate

Number of profiles

Profiles3 records

Subsidiaries3 records

Funding overview

Funding rounds

Investors

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about United Monolithic Semiconductors