Junshine

Name

Junshine

Legal name

江苏中科君芯科技有限公司

Website

https://cas-junshine.com

Company type

Private

Founded year

2011

Operating status

Operating

Headcount range

1–10 employees

Ownership category

akta.pro rank

Product category

Power Semiconductors

NAICS

Semiconductor and Related Device Manufacturing (334413), Semiconductor and Other Electronic Component Manufacturing (3344)

SIC

Semiconductors & Related Devices (3674)

akta.pro primary industry

Power Semiconductor Foundries (BCD/Power IC Processes) (HDAHACAE)

Keywords

• Power semiconductor chips
• SGT MOSFET
• Trench FS IGBT
• Wafer fabrication
• Power electronics devices

Headquarters

HQ city

Wuxi Shi

HQ country

China

HQ region

Asia

Offices1 record

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Technology or R&D, Personnel, Operations, Supply Chain, Marketing or Sales, Infrastructure

Revenue model

1. IGBT and MOSFET Chip/Device Sales: Junshine generates revenue by developing and selling power semiconductor chips (IGBT and SGT MOSFET) in wafer and discrete packaged forms to industrial, automotive, and consumer electronics manufacturers. Revenue is primarily from high-volume product sales of standardized voltage/current devices as well as custom chip development services.

Go-to-market motion1 record

Distribution channels1 record

Marketing channels2 records

Core offering

Junshine designs and manufactures advanced power semiconductor chips, specifically Trench Gate Field Stop (Trench FS) IGBTs and Split Gate Trench (SGT) MOSFETs for medium and low voltage applications (30V-150V). Products are sold as 8-inch wafers and as packaged discrete devices (TO-247, TOLL, TOLT, DFN, sTOLL packages) to industrial, automotive, AI server/HPC, and new energy OEMs. The company leverages SPARC Group's automotive-grade 8-inch wafer fab and offers customized chip development services.

Product overview

Junshine (江苏中科君芯科技有限公司) is a high-tech enterprise specializing in advanced power semiconductor devices. The product portfolio centers on two core technologies: (1) SGT MOSFETs (Split Gate Trench MOSFETs) - medium and low voltage power transistors providing industry-leading figure of merit with low Rdson, low thermal resistance, and avalanche ruggedness, and (2) Trench FS IGBTs (Trench Field Stop Insulated Gate Bipolar Transistors) - which Junshine pioneered in China with 131 authorized patents. The product lines include Wafer products (8-inch automotive-grade wafers) and Discrete products (packaged MOSFETs in TOLL, TO-247, DFN5*6, DFN3*3, TO-263-7, sTOLL, TOLT packages spanning 30V-150V voltage ranges and up to 841A current ratings). Key products include JFG434N150A (industry's most advanced 150V MOSFET), JFGR45N40R (40V/841A high-power MOSFET), and the JFG2R6N135 series for 135V applications. The company operates technology platforms including Testing, Reliability Assessment, Failure Analysis, and Packaging Equipment supporting the complete product lifecycle.

Differentiator

Problem solved

Functional benefit

Products and services

• SGT MOSFET (Split Gate Trench MOSFET) Advanced medium and low voltage Split Gate Trench MOSFET technology providing industry-leading figure of merit performance with extremely low on-resistance, low thermal resistance, and avalanche ruggedness up to >2J. Used in AI servers, HPC, industrial, automotive, and new energy applications across 30V-150V voltage ranges.
• Trench FS IGBT (Trench Field Stop IGBT) Insulated Gate Bipolar Transistor with Trench Field Stop technology. Junshine was the first company in China to develop and mass-produce Trench FS IGBT technology. Products cover main voltage and current ranges and are applied in induction heating, inverter welding, industrial frequency conversion, UPS, and renewable energy.
• Wafer Products (8-inch automotive-grade) 8-inch automotive-grade wafer products for power semiconductor devices, manufactured within SPARC Group's advanced wafer fabrication facility. Sold to customers for in-house packaging.
• Discrete Packaged Products Packaged discrete power semiconductor devices including MOSFETs in TO-247, TOLL, TOLT, DFN5*6, DFN3*3, TO-263-7, and sTOLL packages spanning 30V-150V voltage ranges and current ratings up to 841A.
• JFG434N150A 150V Power MOSFET 150V N-channel MOSFET in TO-247 package with RDS(ON) = 2.5mΩ @ 10V, ID = 434A. Applications include motor driving and battery management systems.
• JFGR45N40R 40V SGT MOSFET 40V N-channel SGT MOSFET in TOLT package with RDS(ON) = 0.37mΩ @ 10V, ID = 841A. Applications include high frequency synchronous rectifiers, brushless DC motor control, battery protection, high performance DC/DC converters, OR-ing and redundant power switches.
• JFG568N40LC 40V SGT MOSFET (DFN5*6 DSC) 40V N-channel SGT MOSFET in DFN5*6 DSC (Dual-sided cooling) package with RDS(ON) = 0.51mΩ @ 10V, ID = 568A. Designed for high performance DC/DC and synchronous rectification.
• JFG434N30L 30V SGT MOSFET 30V N-channel SGT MOSFET in DFN5*6 package with RDS(ON) = 0.75mΩ @ 10V, ID = 434A. Applications include DC-DC converter for server/telecom, power delivery for V-core, ASIC, DDR, GPU, VGA, point-of-load modules, synchronous rectification, and motor control.
• JFG258N100X 100V MOSFET (sTOLL) 100V N-channel MOSFET in sTOLL package with RDS(ON) = 2.0mΩ @ 10V, ID = 262A.
• JFG367N100Q 100V SGT MOSFET (TOLL) 100V N-channel SGT MOSFET in TOLL package with RDS(ON) = 1.1mΩ @ 10V, ID = 367A. Applications include telecom and server power supply, DC-DC converters.
• JFG205N150Q 150V SGT MOSFET (TOLL) 150V N-channel SGT MOSFET in TOLL package with RDS(ON) = 2.8mΩ @ 10V, ID = 205A. Features advanced split gate device design and 100% avalanche test.
• JFG2R6N135Q 135V SGT MOSFET (TOLL) 135V N-channel SGT MOSFET in TOLL package. Applications include high performance synchronous rectification, brushless DC motor control, telecom, e-bike, forklift, garden tools, load switch and eFuse, battery protection.
• JFG2R6N135V 135V MOSFET (TO-263-7) 135V N-channel MOSFET in TO-263-7 package with RDS(ON) = 2.1mΩ @ 10V, ID = 282A. Applications include high performance synchronous rectification, brushless DC motor control, telecom, e-bike, forklift, garden tools, load switch and eFuse, battery protection.

Quantifiable outcome

• 131 authorized IGBT patents (4 PCT) and 132 pending applications covering major voltage and current ranges
• +3 more outcomes

Segments8 records

Ideal customer profiles4 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature4 records

Partnerships

Three partnerships are on record, tiered minor and major.

• 威海新佳 (Weihai Xinjia)minorStrategic or Co-development Partner · 1 January 2019Junshine invested in Weihai Xinjia's packaging production line in 2019, establishing a strategic supply chain partnership for chip packaging and test capabilities.
• 成都电子科大 IGBT团队 (Chengdu University of Electronic Science and Technology IGBT Team)majorStrategic or Co-development Partner · 1 January 2015In early 2015, Junshine integrated the IGBT team from Chengdu University of Electronic Science and Technology, bringing in specialized R&D talent and strengthening the company's IGBT technology development capabilities.
• 中国科学院微电子研究所 (Institute of Microelectronics, Chinese Academy of Sciences)majorStrategic or Co-development Partner · 1 January 1980The Chinese Academy of Sciences' Institute of Microelectronics established Junshine's founding research platform and provided the core technical team. The institute conducted pioneering VDMOS and IGBT research since 1980. This relationship forms the origin of Junshine's technology foundation.

Scale indicators5 records

Recent moves6 records

Expansion highlights5 records

Broad incumbents

• Infineon Technologies: Global leader in power semiconductors with dominant IGBT and MOSFET market share. Competes with Junshine across automotive, industrial, and renewable energy applications; serves as the benchmark for technology and FOM performance.
• Vishay Intertechnology: Major global discrete semiconductor manufacturer with significant MOSFET and IGBT offerings. Competes with Junshine in industrial, automotive, and computing power applications.
• China Resources Microelectronics (CR Micro): China's largest state-backed power semiconductor and analog IDM, operating multiple 6-inch and 8-inch fabs. Direct overlap in power MOSFETs and IGBTs for industrial, automotive, and consumer applications; broader portfolio and scale than Junshine.
• STMicroelectronics: Global semiconductor leader with broad power MOSFET, IGBT, and SiC product portfolio. Competes with Junshine in automotive electrification, industrial drives, and consumer power applications.
• ON Semiconductor (onsemi): Global supplier of power MOSFETs, IGBTs, and SiC devices for automotive and industrial markets. Competes with Junshine in medium/low voltage SGT MOSFETs for data center, EV, and industrial power applications.
• Mitsubishi Electric (Power Device Works): Global leader in IGBT module technology for industrial drives, railway, and EV applications. Benchmarks Trench FS IGBT performance against Junshine's technology positioning.

Direct peers

• Oriental Semiconductor (oriental_os): China-based power semiconductor specialist focused on Trench MOSFET and SGT MOSFET products for industrial, automotive, and consumer applications. Direct domestic competitor with similar product positioning.
• Nexperia: Leading global discrete semiconductor supplier with strong MOSFET portfolio including Trench and SGT technologies. Comparable in target applications (automotive, industrial, computing) and product breadth.
• Silan Microelectronics (士兰微): Hangzhou-based Chinese IDM specializing in power discrete semiconductors including IGBT, MOSFET, and IPM products. Closest direct competitor to Junshine in the China power semiconductor market with overlapping automotive and industrial end markets.
• Alpha & Omega Semiconductor (AOS): Designer and supplier of power semiconductors including SGT MOSFETs, IGBTs, and power ICs. Similar product portfolio focus on medium/low voltage MOSFETs for computing, industrial, and consumer end markets.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat5 records

Key risks5 records

Key highlights7 records

Customer concentration

Compliance5 records

Revenue estimate

Valuation estimate

Number of profiles

Profiles2 records

Subsidiaries1 record

Funding overview

Funding rounds

Investors

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about Junshine