III-V Lab
III-V Lab is a French industrial R&D laboratory jointly owned by Nokia, Thales and CEA-Leti, employing around 130 researchers at Palaiseau and Grenoble. It designs and fabricates III-V compound semiconductors (InP, GaAs, GaN) and integrates them with silicon to deliver custom components, epitaxy wafers and foundry services for telecom, defense, space and quantum customers.
- Company typePrivate
- Founded2004
- HeadquartersPalaiseau, France
- Headcount101–250
- GTM typeB2B
- OfferingHardware or Manufacturing
What III-V Lab does
III-V Lab is a French industrial research laboratory incorporated as a Groupement d'Intérêt Economique (GIE) and jointly owned by Nokia, Thales, and CEA-Leti, created in 2004 and expanded in 2011 when CEA-Leti joined as the third member. It operates approximately 130 researchers, technicians and doctoral candidates across two campuses — its Palaiseau headquarters on the Plateau de Saclay and an engineering site on the CEA-Leti Minatec campus in Grenoble — and runs more than 2,000 m² of cleanrooms equipped with eight epitaxy reactors.
Its core technology is the design, epitaxial growth, fabrication, and heterogeneous integration of III-V compound semiconductors (GaAs, InP, GaN, GaSb) and their combination with silicon. Capabilities span MOVPE, MBE, GSMBE and HVPE epitaxy on substrates up to 300 mm, III-V-on-silicon wafer bonding, multi-physics device modeling, advanced packaging, and characterization. The product and IP portfolio includes InP DHBT transistors (400 GHz fT/fMAX), GaN and InAlGaN HEMTs on SiC for 5G/6G millimeter-wave power, DFB lasers for atomic clocks, mode-locked tapered lasers, semiconductor optical amplifiers, InP photonic integrated circuits on the proprietary SIBH/OPIC platform, MMICs, and SWIR/MWIR/LWIR optical detectors. Reported performance records include 212 Gb/s multiplexing selectors and >110 GHz photodiodes.
The business model combines custom R&D studies on demand, advanced foundry and pilot-line services, supply of advanced III-V components and epitaxy wafers, and technology transfer through spinoffs such as Almae Technologies and mirSense. Go-to-market is B2B and sales-led, anchored by long-standing relationships with Nokia (telecoms) and Thales (defense and security), supplemented by collaborative R&D under European programs (H2020, FP7, PhotonHub PHACTORY). The lab serves telecom, defense, space, mobility, medical, and industrial/scientific markets, with revenue pricing handled via direct quotation and no public pricing. ISO 9001:2015 certification was secured in 2025.
III-V Lab firmographics
Firmographics- Name
- III-V Lab
- Legal name
- III-V Lab GIE (Groupement d'Intérêt Economique)
- Website
- https://3-5lab.fr
- Company type
- Private
- Founded year
- 2004
- Operating status
- Operating
- Headcount range
- 101–250 employees
- Short description
- III-V Lab is a French industrial R&D laboratory jointly owned by Nokia, Thales and CEA-Leti, employing around 130 researchers at Palaiseau and Grenoble. It designs and fabricates III-V compound semiconductors (InP, GaAs, GaN) and integrates them with silicon to deliver custom components, epitaxy wafers and foundry services for telecom, defense, space and quantum customers.
- Ownership category
- akta.pro rank
III-V Lab industry classification
Industry- Product category
- Compound Semiconductors (III-V)
- NAICS
- Semiconductor and Other Electronic Component Manufacturing (33441), Semiconductor and Other Electronic Component Manufacturing (3344)
- SIC
- Services-Commercial Physical & Biological Research (8731), Optical Instruments & Lenses (3827)
- akta.pro primary industry
- R&D / Prototyping & MPW Shuttle Foundries (HDAHACAI)
- akta.pro secondary industries
- Optoelectronic / Photonics Foundries (Silicon Photonics/LED/Laser) (HDAHACAG), Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB)
Keywords
Where III-V Lab is headquartered
LocationHeadquarters
- HQ city
- Palaiseau
- HQ country
- France
- HQ region
- Europe
Offices2 records
Markets served
III-V Lab business model
Business model- GTM type
- B2B
- Offering type
- Hardware or Manufacturing
- Cost components
- Technology or R&D, Personnel, Infrastructure, Operations, Marketing or Sales
Revenue model
- R&D Studies and Collaborative Projects: Custom research and development studies on demand for photonic and microelectronic components. Includes collaborative projects under European programs like H2020, FP7, and national initiatives.
- III-V Wafer Epitaxy: Pre-commercial and customized production of III-V epitaxy wafers using MBE, MOVPE processes for leading edge innovative products.
- Advanced Foundry Services: Pilot Line approach for small to medium size productions for niche markets including SIBH, OPIC platforms.
- Advanced Components: Custom fabrication of GaN and InP transistors, DFB laser diodes, APD avalanche photodiodes, Semiconductor Optical Amplifiers, multiplexors, Analog to Digital Converters, and III-V infrared detectors.
- Technology Transfer: Technology transfer to industrial partners for mass production ramp-up, exemplified by spinoffs like Almae technologies.
Go-to-market motion1 record
Distribution channels3 records
Marketing channels4 records
III-V Lab product offering
Product offeringCore offering
III-V Lab is an industrial research laboratory that designs, grows, and processes III-V compound semiconductor wafers (InP, GaAs, GaN on SiC, Si, GaSb) and manufactures photonic and microelectronic components including PICs, InP DHBTs, GaN HEMTs, DFB lasers, SOAs, photodiodes, MMICs, and III-V-on-silicon heterogeneously integrated devices. It sells custom R&D studies, epitaxy wafers, advanced foundry/pilot-line runs on its SIBH/OPIC platform, collaborative project participation, and advanced components to telecom, defense, space, mobility, medical, and ISM customers.
Product overview
III-V Lab is an industrial research laboratory offering a comprehensive portfolio of III-V semiconductor products and services. The core offerings include custom III-V epitaxy wafers (InP, GaAs, GaN) grown via MOVPE, MBE, GSMBE, and HVPE processes, and the SIBH/OPIC photonic integrated circuit foundry platform. Key component product lines include: InP DHBT high-speed electronic circuits (400 GHz fT/fMAX), GaN HEMT power transistors for 5G/6G, DFB ridge laser diodes for atomic clocks, mode-locked tapered lasers with record pulse energy, III-V on Silicon heterogeneous integration via wafer bonding, high-speed optical preamplified receivers (100 Gbit/s), semiconductor optical amplifiers (SOA/RSOA), photonic integrated circuits (PICs), MMICs, and optical detectors (InGaAs APD, T2SL, QCD). Services encompass R&D studies on demand, advanced foundry/pilot line services, and collaborative research projects. The company operates from Paris-Saclay and Grenoble, France, serving telecommunications, defense, security, space, and medical markets.
Differentiator
Problem solved
Functional benefit
Products and services
- III-V Epitaxy Wafers Custom III-V semiconductor wafers (InP, GaAs, GaN) grown by MOVPE, MBE, GSMBE, and HVPE on substrates including silicon and SOI for photonic and microelectronic applications. Sold to industrial and research customers.
- SIBH/OPIC Photonic Integrated Circuit Platform Semi-Insulating Buried Heterostructure (SIBH) photonic integrated circuit platform used for fabrication of advanced III-V components including lasers, modulators, and optical amplifiers. Offered as a pilot-line foundry service.
- InP DHBT Technology and Components 0.7-µm Indium Phosphide Double Heterojunction Bipolar Transistor technology achieving 400 GHz fT/fMAX and 4.5-V BVCE0, delivered as a process technology and as fabricated components including 212 Gb/s multiplexing selectors and 100 Gb/s distributed differential selector-drivers.
- GaN HEMT Technology and Power Amplifiers Gallium Nitride High-Electron-Mobility Transistor technology on SiC substrate with InAlGaN barrier, delivering integrated power amplifiers up to 10W for 5G millimeter-wave applications.
- DFB Ridge Laser Diodes Distributed Feedback ridge laser diodes emitting at 852 nm and 894 nm for cesium atomic clocks, with single spatial mode, high side-mode suppression ratio, and linewidth below 1 MHz.
- Mode-Locked Tapered Lasers Monolithic multi-section tapered lasers achieving 201 pJ pulse energy at 2.89 GHz repetition rate with 11 ps pulse width compressible to 2.4 ps.
- III-V on Silicon Heterogeneous Integration Service Wafer-bonding-based heterogeneous integration of III-V materials (lasers, SOAs, modulators) with silicon photonic circuits, enabling hybrid photonic integrated circuits and supporting flip-chip and micro-transfer-printing assembly.
- High-Speed Preamplified Optical Receivers Multi-format high-speed linear preamplified optical receivers operating at 100 Gbit/s NRZ-OOK with multi-level capability for high-baud-rate optical communication systems.
- Semiconductor Optical Amplifiers (SOA / RSOA / UW-SOA) Ultra-wideband semiconductor optical amplifiers (UW-SOA), reflective SOAs (RSOA) for tunable lasers, and high-power SOAs for in-line amplification in optical networks.
- Photonic Integrated Circuits (PICs) InP-based photonic integrated circuits including transceivers, directly modulated lasers (DML), electro-absorption modulated lasers (EML), Mach-Zehnder modulators, and detectors for telecom applications exceeding 50 Gbaud.
- MMICs (Monolithic Microwave Integrated Circuits) GaN HEMT MMICs from 0.25 µm to 0.1 µm with fmax > 200 GHz and InP HBT MMICs with fmax > 600 GHz, for microwave and sub-THz applications.
- Optical Detectors (SWIR / MWIR / LWIR) SWIR InGaAs photodiodes on InP including avalanche photodiodes (APD) and Type-II superlattice (T2SL) detectors; MWIR InAsSb on GaSb; and LWIR quantum cascade detectors (QCD) for imaging and sensing applications.
- High-Speed Analog (De)multiplexers High-speed analog multiplexers and demultiplexers supporting data rates exceeding 100 Gbaud for optical communication systems.
- R&D Studies on Demand Custom research and development studies covering design, multi-physics modeling, epitaxy, wafer processing, and characterization of III-V semiconductor devices, sold to industrial customers on a project basis.
- Advanced Foundry / Pilot-Line Services Pilot-line foundry services using the SIBH/OPIC platform for small to medium production runs serving niche markets, with technology transfer to industrial partners for mass production ramp-up.
- Collaborative R&D Projects Joint research projects with academic and industrial partners including European programs such as SHIFT (6G), PhotonHub PHACTORY, ELENA, QAMeleon, TWILIGHT, PLAT4M, and SEQUOIA.
Quantifiable outcome
- 212 Gb/s speed record for 2:1 multiplexing selector using InP DHBT technology
- +3 more outcomes
Companies that use III-V Lab
Customer profileNamed customers2 records
Segments6 records
Ideal customer profiles3 records
III-V Lab technology and API
TechnologyTechnology focussed Yes
API detail
- Has API
- No
- API docs
- API detail
Core technology
AI maturity
App detail
Feature7 records
III-V Lab partnerships and signals
Strategic signalPartnerships
13 partnerships are on record, tiered core and minor.
- PhotonHub PHACTORY ConsortiumcoreIII-V Lab is one of 36 partners in the PhotonHub PHACTORY project considered as a one-stop-shop for photonics innovation in Europe. The project receives €15M investment from the European Commission to deliver photonics-led innovation support for Defense & Space, Datacom-Telecom & Quantum telecommunications. III-V Lab serves as a Demo and Experience Centre offering technical training to support start-ups and SMEs.
- QAMeleon ProjectcoreH2020-ICT project in which III-V Lab demonstrated 100 GBaud DSP-free PAM-4 optical signal generation using InP-DHBT AMUX-driver and Thin-Film Lithium Niobate Modulator Assembly.
- TWILIGHT ProjectcoreH2020-ICT project contributing to III-V Lab's demonstration of high-speed optical signal generation technologies.
- SHIFT ProjectcoreSustainable Technologies Enabling Future Telecom Applications (SHIFT) project supported by 43 partners. Aims to contribute to twin transition through innovations in component and system technologies for advanced telecommunications.
- Nokia Networks FrancecoreFruitful collaboration between Nokia Networks France, Thales Research and Technology, CEA-Leti and III-V Lab on III-V/SOI platform using wafer-bonding enabling integration of lasers.
- RIBERminorEquipment supplier chosen with France Relance's support for acquiring state-of-the-art epitaxy reactor for realization of advanced photonic and nanoelectronic components.
- ELENA Project ConsortiumcoreEuropean electro-optic and nonlinear PIC platform project based on lithium niobate. Part of EU Horizon 2020 research program (grant agreement N° 101016138). Aims to offer enhanced performance for telecoms, LIDAR, quantum technologies, and microwave photonics applications.
- PLAT4M ProjectcoreSilicon Photonic Supply-Chain Project focused on accelerating industrialization of silicon photonics technology. III-V Lab co-developed integrated hybrid III-V lasers and electro-absorption modulators on silicon using wafer bonding technique.
- Almae technologiescoreStartup commercializing innovative photonic technology developed by teams from Nokia Bell Labs, Thales and CEA at III-V Lab to address telecom and data storage center demands for high speed optical data transmission. Has industrial infrastructure to bring advanced components to market.
- SEQUOIA ProjectcoreEuropean FP7 project (SEQUOIA - energy efficient Silicon Emitter using heterogeneous integration of III-V QUantum dOt and quantum dash materIAls) achieving significant advances in silicon photonic integrated circuits.
- mirSenseminorStartup formed by Mathieu Carras and Mickael Brun signed infrared spectrometry agreement with Alcatel-Lucent, Thales and CEA-Leti to market miniaturized tunable laser sources developed at III-V Lab.
- SofradirminorSofradir acquired infrared technologies from Safran, Thales and GIE III-V Lab (Thales, Alcatel-Lucent, CEA), consolidating French infrared technologies under one roof.
- CEA-LeticoreCEA-Leti joined the III-V Lab in 2011, strengthening the industrial research capabilities of the R&D center. The partnership combines III-V semiconductor and silicon technologies, opening new research perspectives.
Scale indicators10 records
Recent moves7 records
Expansion highlights6 records
III-V Lab competitors and assessment
Company assessmentEmerging players
- CompoundTek: CompoundTek operates a silicon photonics and III-V-on-silicon foundry serving emerging PIC applications. Its wafer-bonding and hybrid integration foundry model closely parallels III-V Lab's advanced foundry services for niche customers.
- IMEC: IMEC is Europe's leading independent semiconductor R&D center running silicon photonics, III-V-on-silicon and compound semiconductor programs. It is a peer to III-V Lab in mission (industrial research lab serving European strategic autonomy) and technology scope (heterogeneous integration).
Direct peers
- Lumentum: Lumentum designs and manufactures III-V photonic components (InP lasers, modulators, photodiodes) for telecom, datacom and 3D sensing. Its InP-based PIC and high-speed transceiver portfolio overlaps with III-V Lab's SIBH/OPIC and high-speed preamplified receiver product lines.
- NeoPhotonics (acquired by Lumentum): NeoPhotonics (now part of Lumentum) developed InP-based photonic integrated circuits and high-speed transceivers for telecom and datacom networks — directly comparable to III-V Lab's PIC and high-speed analog multiplexer/demultiplexer product lines.
- AMS-OSRAM: AMS-OSRAM is a global optoelectronic semiconductor manufacturer with deep III-V (GaAs, InP, GaN, InGaAs) capabilities serving automotive, industrial, medical and consumer markets — comparable to III-V Lab across laser diodes, IR detectors, and visible/NIR emitters.
- IQE plc: IQE is the world's largest pure-play compound semiconductor wafer foundry, supplying III-V epitaxial wafers (GaAs, InP, GaN) to wireless, photonics, and CMOS-integrated markets. It is the closest commercial analogue to III-V Lab's III-V epitaxy wafer business.
- Coherent Corp: Coherent is a global III-V optoelectronics leader producing InP, GaAs and GaN-based lasers, photodiodes and photonic integrated circuits for telecom, datacom, and sensing — directly comparable to III-V Lab's InP laser, SOA, and high-speed photodiode portfolio.
- IntelliEPI: IntelliEPI is a pure-play MBE epitaxy foundry specializing in GaAs, InP and GaSb-based epiwafers for photonics, RF and infrared applications. It is a direct competitor to III-V Lab's MBE epitaxy wafer service.
Broad incumbents
- GlobalFoundries: GlobalFoundries is a top-tier commercial semiconductor foundry offering RF GaN-on-SiC, silicon photonics (PDK), and BiCMOS processes. Its broad GaN RF and silicon photonics platforms make it an incumbent comparable to III-V Lab's GaN HEMT MMIC and III-V-on-silicon wafer-bonding offerings.
- Tower Semiconductor: Tower Semiconductor is a specialty foundry offering RF SOI, SiGe, silicon photonics and analog processes. Its photonic and high-speed analog platforms overlap with III-V Lab's heterogeneous integration and high-speed electronic device focus.
Market position
Strengths1 record
Weaknesses5 records
Competitive moat5 records
Key risks5 records
Key highlights6 records
Customer concentration
III-V Lab social profiles
Digital presenceIII-V Lab compliance and trust
Trust signalCompliance2 records
III-V Lab financial estimates
Financial estimateRevenue estimate
Valuation estimate
III-V Lab leadership team
Management profileNumber of profiles
III-V Lab funding detail
Funding detailFunding overview
Funding rounds
Investors
Funding detail is available on the Subscription and Enterprise plan.Contact sales →
III-V Lab M&A and investment
M&A and investmentM&A
Investments
M&A and investment is available on the Subscription and Enterprise plan.Contact sales →
Frequently asked questions about III-V Lab
What does III-V Lab do?
III-V Lab is an industrial research laboratory that designs, grows, and processes III-V compound semiconductor wafers (InP, GaAs, GaN on SiC, Si, GaSb) and manufactures photonic and microelectronic components including PICs, InP DHBTs, GaN HEMTs, DFB lasers, SOAs, photodiodes, MMICs, and III-V-on-silicon heterogeneously integrated devices. It sells custom R&D studies, epitaxy wafers, advanced foundry/pilot-line runs on its SIBH/OPIC platform, collaborative project participation, and advanced components to telecom, defense, space, mobility, medical, and ISM customers.
Is III-V Lab a public or private company?
III-V Lab is a private company. It is classified as corporate owned and is currently operating.
When was III-V Lab founded?
III-V Lab was founded in 2004. It employs 101 to 250 people.
Where is III-V Lab based?
III-V Lab is headquartered in Palaiseau, France, in the Europe region.
How does III-V Lab make money?
Five revenue lines are on record. R&D Studies and Collaborative Projects are the primary driver. The others are III-V Wafer Epitaxy, advanced Foundry Services, advanced Components and technology Transfer.
Who are III-V Lab's main competitors?
Emerging players on record are CompoundTek and IMEC. Direct peers are Lumentum, NeoPhotonics (acquired by Lumentum), AMS-OSRAM, IQE plc, Coherent Corp and IntelliEPI. Broad incumbents are GlobalFoundries and Tower Semiconductor.
Does III-V Lab have an API?
No public API is recorded for III-V Lab.
What industry is III-V Lab in?
III-V Lab's product category is Compound Semiconductors (III-V). Its primary akta.pro industry code is HDAHACAI, R&D / Prototyping & MPW Shuttle Foundries, with a secondary code of HDAHACAG, Optoelectronic / Photonics Foundries (Silicon Photonics/LED/Laser). Its NAICS code is 33441 and its SIC code is 8731.