NoMIS Power Group

What NoMIS Power Group does

NoMIS Power Group LLC is a fabless silicon carbide (SiC) power semiconductor company founded in May 2020 as a spinout from SUNY Polytechnic Institute, headquartered in Albany, New York within the CESTM building of the Albany Nanotech Complex. The company designs and develops SiC MOSFETs, JFETs, IGBTs, diodes, bi-directional devices, and power modules spanning 400 V to 20 kV, with particular depth in the medium- and high-voltage classes (1.2 kV, 1.7 kV, and 3.3 kV). Its technology differentiators include a proprietary thicker-than-industry-standard gate oxide, a next-generation planar SiC MOSFET platform achieving 2.5 mΩ-cm² specific on-resistance, and a short-circuit withstand time (SCWT) of minimum 5 µs versus the industry standard of 2–3 µs, achieved without compromising on-resistance.

The company targets mission-critical applications in energy and grid infrastructure (BESS, solar inverters, HVDC, solid-state transformers), transportation and marine electrification (rail traction, heavy-duty EVs, electrified aircraft), aerospace and defense, industrial drives, EV fast charging, and—more recently—AI data center power infrastructure. Customers include GE Grid Solutions, EPRI, NREL, Michigan State University, Salt River Project, and Minnesota Power, largely through R&D consortia such as the ARPA-E DC-GRIDS program.

Revenue is generated through four streams: SiC device and module hardware sales (bare die and packaged parts in TO-247-4L, SOT-227, and Pin Pack 2 formats), custom co-development services, testing and reliability characterization (SCWT, EAS via UIS, TDDB), and technology licensing and consulting/SIC Masterclasses. Hardware is sold through authorized distribution partners Richardson Electronics (global), Astute Group (Europe, MENA, ANZ), and Digikey (select SKUs), with direct sales for custom engagements. Pricing is quote-based and not publicly disclosed. Since founding, NoMIS has accumulated over $1.4 million in non-dilutive grant funding across ARPA-E, NSF, DOE, DMEA, EERE, AFRL, SUNY TAF, and DOE prize programs, and maintains a lean 1–10 person team anchored by four co-founders with combined SiC experience from Cree, PowerAmerica, Samsung, LG Electronics, and SUNY Polytechnic Institute.

Name

NoMIS Power Group

Legal name

NoMIS Power Group LLC

Website

https://nomispower.com

Company type

Private

Founded year

2020

Operating status

Operating

Headcount range

1–10 employees

Short description

NoMIS Power Group is a fabless silicon carbide power semiconductor company developing SiC MOSFETs, modules, and packaging spanning 1.2 kV to 20 kV for mission-critical applications in grid infrastructure, transportation, aerospace and defense, industrial drives, and EV charging, sold through global distributors and direct enterprise channels.

Ownership category

akta.pro rank

Product category

Power Semiconductors

NAICS

Semiconductor and Other Electronic Component Manufacturing (33441)

SIC

Semiconductors & Related Devices (3674)

akta.pro primary industry

High-Voltage, Power Discretes & Modules (IGBT/MOSFET/SiC/GaN) (HDAHAAAK)

akta.pro secondary industries

Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG), Power Modules (IGBT/MOSFET/SiC/GaN Modules) (HDAHAHAH), Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging (EUAFAIAJ)

Keywords

• Silicon carbide semiconductors
• SiC power MOSFETs
• Wide bandgap semiconductors
• Power semiconductor modules
• Medium voltage SiC devices

Headquarters

HQ city

Albany

HQ country

United States

HQ region

North America

Offices2 records

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Technology or R&D, Personnel, Supply Chain, Operations, Marketing or Sales, Infrastructure

Revenue model

1. SiC Semiconductor Device Sales: Sales of SiC MOSFETs, power modules, and discretes across voltage ranges from 1.2 kV to 10 kV and above. Products sold as bare die or packaged parts (TO-247-4L, SOT-227, Pin Pack 2). Distributed through authorized distributors (Richardson Electronics, Astute Group) and directly via Digikey.
2. Custom Development Services: Co-designing SiC devices, packages, and modules tailored to customer applications. Delivers fully characterized, manufacturable champion devices and prototype A samples. Includes qualification and manufacturing support.
3. Testing & Reliability Services: Comprehensive electrical and reliability characterization of SiC MOSFETs and power modules. Services include DC and dynamic performance testing, short-circuit withstand time testing, avalanche energy (EAS) via UIS testing, TDDB lifetime measurements, and screening services.
4. Expert Consulting & SiC Masterclasses: Expert consulting services helping industry leaders evaluate SiC opportunities, build roadmaps, and implement solutions. SiC Masterclasses covering device physics, fab processing, packaging, and system applications.
5. Technology Licensing: Flexible licensing options providing direct access to NoMIS Power's SiC innovations including device technology and packaging platforms for customers seeking tailored solutions.

Pricing tiers

Go-to-market motion2 records

Distribution channels4 records

Marketing channels8 records

Core offering

NoMIS Power Group designs, develops, and sells Silicon Carbide (SiC) power semiconductor devices and packaging architectures, including SiC MOSFETs, JFETs, IGBTs, diodes, power modules, and SiC power ICs spanning 400 V to 20 kV. The company's product line centers on medium- and high-voltage discrete SiC MOSFETs (1.2 kV, 1.7 kV, 3.3 kV classes) and half-bridge / bi-directional power modules sold as bare die or packaged parts (TO-247-4L, SOT-227, Pin Pack 2). Complementing the product line, NoMIS offers custom SiC device and packaging co-design, third-party testing and reliability characterization, expert consulting / SiC Masterclasses, and technology licensing for OEMs in aerospace, defense, grid, transportation, industrial, and EV charging applications.

Product overview

NoMIS Power Group develops and manufactures Silicon Carbide (SiC) power semiconductor devices and packaging architectures spanning 400 V to 20 kV. The product portfolio includes discrete SiC MOSFETs (1.2 kV, 1.7 kV, 3.3 kV classes), power modules (half-bridge and bi-directional configurations), and complementary diodes. Key discrete products include the N3PT series (N3PT035MP330K at 3.3 kV/35 mΩ/88 A, N3PT100MP170K at 1.7 kV/100 mΩ/24 A, N3PT028MP120K at 1.2 kV/28 mΩ/72 A, N3PT065MP120K at 1.2 kV/65 mΩ/40 A, N3T035MP120K at 1.2 kV/35 mΩ/76 A), with bare die options available. Power module offerings include NH3T008MP120F2 (1.2 kV/8 mΩ/200 A half-bridge) and NCD3T400MP330S (3.3 kV/400 mΩ common-drain BiFET). The company provides complementary services including expert consulting, testing and reliability characterization, and custom design and development with technology licensing. Products are available through authorized distribution partners Richardson Electronics (global) and Astute Group (Europe, MENA, ANZ), as well as Digikey for discrete components.

Differentiator

Problem solved

Functional benefit

Products and services

• N3PT035MP330K SiC MOSFET 3.3 kV Silicon Carbide MOSFET with 35 mΩ on-resistance and 88 A current rating in TO-247-4L package, designed for medium-voltage converter stages requiring low-loss switching and high-power density. Targeted at traction auxiliaries, charging subsystems, and industrial power supplies.
• N3PT100MP170K SiC MOSFET 1.7 kV Silicon Carbide MOSFET with 100 mΩ on-resistance and 24 A current rating in TO-247-4L package, targeting ~1.0 kV-class DC buses used in traction auxiliaries, charging subsystems, and industrial power supplies.
• N3PT1000MP170D SiC MOSFET 1.7 kV Silicon Carbide MOSFET with 1000 mΩ on-resistance and 5.1 A current rating in TO-247-3L package, designed for high-resistance small-die applications including isolation monitoring devices (IMD) and solid-state relays (SSR).
• N3PT028MP120K SiC MOSFET 1.2 kV Silicon Carbide MOSFET with 28 mΩ on-resistance and 72 A current rating in TO-247-4L package, part of the next-generation planar platform for high-frequency switching applications.
• N3PT065MP120K SiC MOSFET 1.2 kV Silicon Carbide MOSFET with 65 mΩ on-resistance and 40 A current rating in TO-247-4L package, offering an optimized efficiency-ruggedness trade-off for demanding power conversion applications.
• N3T035MP120K SiC MOSFET 1.2 kV Silicon Carbide MOSFET with 35 mΩ on-resistance and 76 A current rating in TO-247-4L package, featuring thicker-than-industry-standard gate oxide for enhanced reliability.
• N3T080MP330 SiC MOSFET (Bare Die) 3.3 kV Silicon Carbide MOSFET with 80 mΩ on-resistance and 34 A current rating, available as bare die, designed for medium-voltage applications including BESS, renewables, and rail traction.
• N3T080MP330K SiC MOSFET 3.3 kV Silicon Carbide MOSFET with 80 mΩ on-resistance and 34 A current rating in TO-247-4L package, the first commercial 3.3 kV SiC MOSFET from NoMIS with best-in-class figures of merit.
• N3T200MP330S SiC MOSFET 3.3 kV Silicon Carbide MOSFET with 200 mΩ on-resistance and 20 A current rating in SOT-227 package, targeting high-resistance applications in medium-voltage power conversion.
• N3PT100MP170 SiC MOSFET (Bare Die) 1.7 kV Silicon Carbide MOSFET with 100 mΩ on-resistance and 24 A current rating, available as bare die, bridging established 1.2 kV designs to 3.3 kV architectures.
• NH3T008MP120F2 SiC Half-Bridge Power Module 1.2 kV Silicon Carbide Half-Bridge Power Module with 8 mΩ on-resistance and 200 A current rating in Pin Pack 2 configuration, enabling high-power-density applications.
• NCD3T400MP330S SiC Bi-Directional FET Power Module 3.3 kV Silicon Carbide Common-Drain Bi-Directional FET (BiFET) Power Module with 400 mΩ on-resistance and 20 A current rating in SOT-227 package.
• Expert Consulting Services Expert consulting services helping industry leaders harness SiC technology potential, including SiC Masterclasses, roadmap development, and advisory services covering device physics, fab processing, packaging, and system applications.
• Testing & Reliability Characterization Services Comprehensive electrical and reliability characterization of SiC MOSFETs and power modules, measuring DC and dynamic performance, short-circuit withstand time, avalanche energy (EAS) via UIS testing, TDDB lifetime, and screening services.
• Custom SiC Design & Development Services Co-designing SiC devices, packages, and modules tailored to specific customer applications, delivering fully characterized, manufacturable champion devices and prototype A samples, with qualification and manufacturing support included.
• SiC Technology Licensing Flexible licensing options providing direct access to NoMIS Power's SiC innovations, including device technology and packaging platforms for customers seeking tailored solutions at various voltage nodes.

Quantifiable outcome

• 90% lower switching losses compared to silicon-based solutions
• +7 more outcomes

Named customers6 records

Segments5 records

Ideal customer profiles5 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature6 records

Partnerships

17 partnerships are on record, tiered flagship, core and minor.

• Richardson ElectronicsflagshipChannel Partner/ Reseller/ Distributor · 20 May 2026Global strategic partnership for SiC power semiconductor portfolio spanning 1.2 kV to 10 kV. Richardson Electronics' Power & Microwave Technologies group provides design-in support, systems integration, prototyping, testing, logistics, and aftermarket service. Partnership targets battery energy storage, renewable energy, AI data center power, HVDC, rail, aerospace, and industrial markets.
• Michigan State UniversitycoreStrategic or Co-development Partner · 12 May 2026Lead institution for $2.5M ARPA-E DC-GRIDS project to develop high-voltage SiC-based NPC-PEBBs for HVDC converters. Dr. Omid Beik serves as PI. NoMIS Power supplies 3.3 kV SiC MOSFETs and leads device-level packaging.
• Astute GroupcoreChannel Partner/ Reseller/ Distributor · 24 February 2026Authorized distribution partner for Europe, MENA, and Australia/New Zealand. Expands access to NoMIS Power's SiC portfolio with local market support and supply-chain services across aerospace, defense, energy, transportation, and industrial markets.
• GE Grid SolutionscoreStrategic or Co-development PartnerDC-GRIDS consortium partner for development of HVDC converter technologies using NoMIS 3.3 kV SiC MOSFETs for modular valves in multiterminal HVDC converters.
• National Renewable Energy Laboratory (NREL)coreStrategic or Co-development PartnerDC-GRIDS consortium partner. Previously collaborated with NoMIS Power on DOE award for advanced 3.3 kV, 200 A SiC power modules for EV charging and grid resilience.
• EPRIcoreStrategic or Co-development PartnerDC-GRIDS consortium partner for HVDC technology development.
• Salt River ProjectminorStrategic or Co-development PartnerDC-GRIDS consortium partner representing utility perspective for grid technology development.
• Minnesota PowerminorStrategic or Co-development PartnerDC-GRIDS consortium partner representing utility perspective for grid technology development.
• Lux SemiconductorscoreStrategic or Co-development PartnerPhase 2 American-Made SiC Packaging Prize team member. Contributes chip-scale packaging expertise to develop metal-core SiC power blocks for high-voltage packaging.
• QP TechnologiescoreStrategic or Co-development PartnerPhase 2 American-Made SiC Packaging Prize team member. Contributes packaging and manufacturing expertise.
• University of ArkansascoreStrategic or Co-development PartnerPhase 2 American-Made SiC Packaging Prize team member. Contributes research expertise spanning the value chain for accelerated commercialization.
• National Renewable Energy Laboratory (NREL)coreStrategic or Co-development PartnerDOE Vehicle Technologies Office collaboration to develop 3.3 kV, 200 A half-bridge SiC power module for EV charging and grid infrastructure.
• The Ohio State UniversitycoreStrategic or Co-development PartnerARPA-E SEED SBIR Phase I & II project partner for 6.5 kV, 100 A half-bridge SiC power module development. Professor Dr. Anant Agarwal serves as co-founder.
• Virginia Tech UniversityminorStrategic or Co-development PartnerEERE/AMO SBIR project partner for highly integrated, low cost SiC power modules.
• North Carolina State UniversityminorStrategic or Co-development PartnerDMEA Phase I SBIR partner for high-temperature SiC CMOS IC technology development.
• NY CREATES / SUNY Polytechnic InstitutecoreStrategic or Co-development PartnerCo-locator and ecosystem partner at Albany Nanotech Complex. CASPER testing facility partner. Original spinout institution. Leased lab space within CESTM building.
• SUNY Polytechnic InstitutecoreStrategic or Co-development PartnerOriginal spinout institution. Source of founding team members (Dr. Sung, Dr. Shahedipour-Sandvik) and ongoing research collaboration through CASPER center.

Scale indicators6 records

Recent moves8 records

Expansion highlights6 records

Broad incumbents

• Microchip Technology: U.S. semiconductor company with a discrete SiC MOSFET and power module portfolio serving industrial and automotive markets. Comparable to NoMIS in SiC power semiconductor offerings, with broader microcontrollers and mixed-signal portfolio.
• Infineon Technologies: German semiconductor giant with one of the broadest SiC MOSFET and module portfolios (CoolSiC family) serving automotive, industrial, and renewable energy markets. Comparable to NoMIS as a SiC power semiconductor supplier, but with global scale, owned fabs, and entrenched automotive Tier-1 design-wins.
• STMicroelectronics: European semiconductor major with leading SiC MOSFET and module portfolio for automotive traction inverters and industrial drives. Directly comparable as a SiC power supplier, with much larger fab capacity and Tesla-grade automotive volume programs.
• onsemi (ON Semiconductor): U.S. power semiconductor major with a growing SiC portfolio (EliteSiC family) for EV traction, charging, and industrial. Comparable to NoMIS as a SiC competitor, though onsemi operates at scale with acquired SiC wafer capability via GTAT.
• Wolfspeed: Former Cree, the U.S.-headquartered SiC power semiconductor leader with vertically integrated SiC wafer and device manufacturing. Directly comparable to NoMIS across the full SiC power MOSFET and module portfolio, though Wolfspeed operates at vastly larger scale and across all voltage classes.
• ROHM Semiconductor: Japanese SiC pioneer offering discrete SiC MOSFETs, SBDs, and full power modules with vertical integration into SiC wafer production. NoMIS partnered with ROHM via the Bodo's SiC Expert Talk panel, reflecting ROHM's leadership position in the same SiC power device category.

Direct peers

• SemiQ (a division of SMC Diode Solutions): U.S. SiC power semiconductor specialist offering SiC MOSFETs, SBDs, and modules at 1200 V and 1700 V classes. Direct competitor to NoMIS in the medium-voltage SiC discrete market with similar voltage range overlap.
• GeneSiC Semiconductor: U.S.-based SiC power semiconductor specialist acquired by Navitas. Direct competitor to NoMIS in SiC MOSFETs, JBS diodes, and high-voltage SiC devices, with a similar focus on rugged, high-reliability SiC for industrial, military, and renewable applications.

Emerging players

• Power Integrations: U.S. power semiconductor company with a growing SiC gate driver and IC portfolio serving high-voltage power conversion. Comparable to NoMIS as a participant in SiC power electronics, though focused on gate driver ICs rather than discrete power MOSFETs.

Others

• X-FAB Silicon Foundries: European-headquartered specialty foundry with SiC process platforms (including for 1.2 kV to 10 kV devices) used within the PowerAmerica ecosystem. Listed in the company data as NoMIS's foundry partner for SiC device fabrication; relevant as a peer relationship rather than a direct competitor.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat5 records

Key risks6 records

Key highlights7 records

Customer concentration

• LinkedInlinkedin.com/company/nomis-power-group

Revenue estimate

Valuation estimate

Number of profiles

Profiles11 records

Funding overview

Funding rounds2 records

Investors2 records

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about NoMIS Power Group