What CorEnergy Semiconductor does

CorEnergy Semiconductor (Jiangsu CorEnergy Microelectronics Technology Development Co., Ltd. / 江苏能华微电子科技发展有限公司) is a privately-held Chinese gallium nitride (GaN) power semiconductor IDM founded in 2010 in Suzhou, with manufacturing in Zhangjiagang and sales/R&D outposts in Shenzhen and California's Silicon Valley. The company designs, manufactures, and sells GaN epitaxial wafers (6-inch and 8-inch, on Si/sapphire/SiC substrates), GaN power devices spanning 40V–1200V under the CoreGaN brand, and customer-specified GaN foundry services. It is one of very few companies globally to simultaneously master three GaN technology platforms — enhancement-mode (E-mode), depletion-mode cascade, and depletion-mode direct drive — and jointly holds a differentiated ultra-thin buffer (UTB) epitaxial technology with Southeast University that underpinned the world's first reported 1200V GaN monolithic integration platform presented at IEDM 2023.

Name

CorEnergy Semiconductor

Legal name

江苏能华微电子科技发展有限公司

Website

https://corenergy.com

Company type

Private

Founded year

2010

Operating status

Operating

Headcount range

101–250 employees

Short description

CorEnergy Semiconductor is a Chinese GaN power semiconductor IDM (founded 2010) producing epitaxial wafers, 40V–1200V power devices, and foundry services for consumer electronics, automotive, data center, and industrial power applications.

Ownership category

akta.pro rank

Product category

Gallium Nitride (GaN) Power Semiconductors

NAICS

Semiconductor and Related Device Manufacturing (334413)

SIC

Semiconductors & Related Devices (3674)

akta.pro primary industry

Wide-Bandgap Power Devices (SiC/GaN Discretes) (HDAHAHAG)

akta.pro secondary industries

High-Voltage, Power Discretes & Modules (IGBT/MOSFET/SiC/GaN) (HDAHAAAK), Power Semiconductor Foundries (BCD/Power IC Processes) (HDAHACAE), Wide-Bandgap (SiC/GaN) Power Modules, Gate Drivers & Packaging (EUAFAIAJ)

Keywords

• Gallium nitride semiconductors
• GaN power devices
• GaN epitaxial wafers
• Semiconductor foundry services
• Wide bandgap semiconductors

Headquarters

HQ city

Zhangjiagang

HQ country

China

HQ region

Asia

Offices4 records

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Technology or R&D, Infrastructure, Personnel, Operations, Marketing or Sales

Revenue model

1. GaN Epitaxial Wafers Sales: CorEnergy sells GaN epitaxial wafers on silicon, sapphire, and SiC substrates in 6-inch and 8-inch diameters, covering D-HEMT, E-HEMT, RF-HEMT, and SBD product lines.
2. GaN Power Devices Sales: Sale of packaged GaN power field-effect transistors (FETs) and GaN integrated circuits in various packages (DFN5*6, DFN8*8, TO220, TO220F, TO252, TO247-3L) spanning 40V–1200V voltage ratings and ranging from 80mΩ to 900mΩ conduction resistance.
3. GaN Foundry / Processing Services: CorEnergy provides GaN foundry process platform services including photolithography (50mm–200mm), metal sputtering and evaporation, dry and wet etching, PECVD and ALD thin film deposition, ion implantation, TSV process, wafer grinding and scribing, device testing, laser slotting, and pan cleaning.
4. Customer-Specified GaN Foundry Services: IDM model allows CorEnergy to offer customer-specified GaN foundry services alongside standard product catalog.

Go-to-market motion2 records

Distribution channels3 records

Marketing channels4 records

Core offering

CorEnergy Semiconductor is an Integrated Device Manufacturer (IDM) that designs, manufactures, and sells gallium nitride (GaN) semiconductor products across the full value chain: GaN epitaxial wafers on silicon, sapphire, and silicon carbide substrates (6-inch and 8-inch, 40V–1200V), GaN power devices under the CoreGaN brand (E-mode, D-mode, cascode D-mode, and direct-drive D-mode HEMTs in DFN and TO packages), and customer-specified GaN foundry process services including photolithography, etch, PECVD/ALD, ion implantation, TSV, and test. The company serves consumer electronics, automotive, data center, LED lighting, energy storage, smart grid, and industrial power tool customers, with a wholly owned Shenzhen market-development subsidiary (KeNengXin / 科能芯) and a Silicon Valley R&D office supporting both domestic China and international enterprise customers.

Product overview

CorEnergy Semiconductor is an IDM (Integrated Device Manufacturer) specializing in third-generation gallium nitride (GaN) semiconductor technology. The company operates a full-chain IDM model covering epitaxial growth, device design, process technology, packaging, testing, and application modules. The product portfolio comprises three main categories: (1) Epitaxial Products including 6-inch and 8-inch silicon-based GaN wafers (GaN-on-Si), silicon carbide-based GaN wafers (GaN-on-SiC), and sapphire-based GaN wafers (GaN-on-Sapphire); (2) Power Devices under the CoreGaN brand including D-mode (depletion) GaN HEMTs, E-mode (enhancement) GaN HEMTs, cascaded depletion-mode devices, and direct-drive depletion-mode devices in various packages (DFN5×6, DFN8×8, TO220, TO220F, TO252, TO247-3, TO247-4) with voltage ratings spanning 40V to 1200V; (3) Foundry Process Platform providing GaN wafer processing services from photolithography through final testing. The company also offers reference design evaluation boards and simulation models for customer design-in support. Core applications target consumer electronics (PD fast chargers), data centers, LED lighting, energy storage, EV charging, and industrial power supplies.

Differentiator

Problem solved

Functional benefit

Brands

• CoreGaN: GaN product line including enhanced gallium nitride, cascaded depletion gallium nitride, and depletion direct drive solutions

Products and services

• 6-inch Silicon-based GaN Epitaxial Wafer 6-inch GaN-on-Si epitaxial wafer for power device fabrication, supporting D-HEMT, E-HEMT, and RF-HEMT configurations across a 40V–1200V voltage range for power device manufacturers.
• 8-inch Silicon-based GaN Epitaxial Wafer 8-inch GaN-on-Si epitaxial wafer for power device fabrication, supporting D-HEMT and E-HEMT configurations across a 40V–1200V voltage range.
• Silicon Carbide-based GaN Epitaxial Wafer GaN-on-SiC epitaxial wafer available in 50mm, 100mm, and 150mm sizes for RF device applications requiring high thermal conductivity and frequency performance.
• Sapphire-based GaN Epitaxial Wafer GaN-on-Sapphire epitaxial wafer for high-voltage applications, supporting D-HEMT, E-HEMT, and SBD configurations including CorEnergy's 1200V monolithic integration platform.
• CoreGaN D-Mode GaN Power Devices Depletion-mode GaN HEMT power devices in 650V/700V voltage ratings with conduction resistance options from 80mΩ to 900mΩ across DFN5×6, DFN8×8, TO220, TO220F, TO252, TO247-3, and TO247-4 packages for automotive and industrial power conversion.
• CoreGaN E-Mode GaN Power Devices Enhancement-mode GaN HEMT power devices at 650V with 300mΩ/160mΩ conduction resistance options in DFN5×6 and DFN8×8 packages, featuring normally-off operation and increased threshold voltage for PD fast-charge and consumer applications.
• CoreGaN Cascaded Depletion-mode GaN Devices Cascode-configured depletion-mode GaN devices combining a D-mode GaN transistor with a low-voltage Si MOSFET for simplified gate drive, available in TO220 and TO220F packages.
• CoreGaN Depletion Direct-Drive GaN Devices Direct-drive depletion-mode GaN devices enabling parallel operation for high-power industrial applications, available in TO247-4 industrial packaging.
• GaN Foundry Process Platform Customer-specified GaN foundry process services from photolithography (50mm–200mm) through metal sputtering and evaporation, dry and wet etching, PECVD and ALD thin film deposition, ion implantation, TSV, wafer grinding and scribing, device testing, laser slotting, and pan cleaning.
• 1200V E-mode GaN Monolithic Integrated Platform 1200V-class monolithic GaN integration platform on sapphire substrate featuring high-voltage E-mode devices, low-voltage E-mode devices, diodes, resistors, and capacitors, with crosstalk-free 800V/1MHz/175°C half-bridge operation, 2300V device breakdown, 100pA/mm off-state leakage at 1200V, and 3000V shallow-trench isolation breakdown voltage.
• CE65E300DNYI GaN Power Device 650V E-mode GaN HEMT power device with 300mΩ conduction resistance and 2.5V threshold voltage in a DFN5×6 package, targeted at compact PD fast chargers and adapters.
• CE65H160DNGI GaN Power Device 650V depletion-mode GaN device with 160mΩ conduction resistance and 1.7V threshold voltage in a DFN8×8 package, for use as a Cascode building block in fast-charge and industrial converters.
• CE65H110TOAI GaN Power Device 650V cascaded depletion-mode GaN device with 110mΩ conduction resistance and 3.9V threshold voltage in a TO220 package, for power conversion stages in chargers, adapters, and industrial supplies.
• CE65H080TOCI GaN Power Device 650V depletion-mode GaN device with 80mΩ conduction resistance in a TO247-3 industrial package, targeted at high-power industrial and renewable-energy converters.
• GaN Power Device Reference Designs (Evaluation Boards) Pre-designed evaluation reference platforms in 33W, 36W, 60W, 65W, 100W, 120W, and 140W PD fast-charger and adapter form factors demonstrating CoreGaN device implementation for customer design-in.
• GaN Device Simulation Models SPICE and thermal simulation models for GaN power devices including CE65E300DNYI, CE65D245DNBI, and CE65D150DNBI for use in customer circuit design and verification.

Quantifiable outcome

• 94.2% full-load efficiency at 230VAC input for 65W 2C1A PD fast charger demo board
• +4 more outcomes

Named customers3 records

Segments7 records

Ideal customer profiles3 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature4 records

Partnerships

Three partnerships are on record, tiered core.

• Shenzhen Xinfei Electronics (深圳市芯斐电子)coreChannel Partner/ Reseller/ Distributor · 27 April 2021Shenzhen Xinfei Electronics attended CorEnergy's 2021 Shenzhen distributor conference as one of over 20 distributor/agent units. Acts as a reseller and distribution partner for CorEnergy's GaN products in the Chinese market.
• Shenzhen Sipin Hong Technology (深圳市矽品宏科技)coreChannel Partner/ Reseller/ Distributor · 27 April 2021Shenzhen Sipin Hong Technology attended CorEnergy's 2021 Shenzhen distributor conference as one of over 20 distributor/agent units. Acts as a reseller and distribution partner for CorEnergy's GaN products in the Chinese market.
• Southeast University (东南大学)coreStrategic or Co-development PartnerLong-term technical cooperation between CorEnergy and Southeast University resulted in jointly developed ultra-thin buffer layer (UTB) epitaxial technology. This partnership produced the world's first reported 1200V GaN high/low voltage compatible fabrication process, and the 1200V GaN half-bridge integrated chip capable of crosstalk-free operation at 800V/1MHz/175°C.

Scale indicators6 records

Recent moves7 records

Expansion highlights7 records

Broad incumbents

• STMicroelectronics: Global IDM with broad power semiconductor portfolio including silicon IGBT/MOSFET and SiC. Competes broadly with CorEnergy in automotive power and industrial markets where GaN overlaps with SiC technologies.
• Texas Instruments: Major analog/power semiconductor incumbent with a growing GaN portfolio integrated with gate drivers and controllers. Competes with CorEnergy in higher-power density and data center/server PSU applications.
• Infineon Technologies: Global power semiconductor leader offering IGBTs, SiC, CoolGaN (via GaN Systems acquisition), and integrated gate drivers. Competes with CorEnergy's GaN portfolio as part of a broader portfolio across automotive, industrial, and consumer markets.
• Nexperia: Global discrete power semiconductor leader (owned by Wingtech) with an expanding GaN portfolio. Comparable to CorEnergy in discrete GaN HEMT products (40V-650V) and broad distribution-led reach into consumer and industrial power.

Direct peers

• GaN Systems: Canadian GaN power transistor specialist (acquired by Infineon) serving consumer fast charging, EV, and industrial power conversion. Highly comparable to CorEnergy's CoreGaN E-mode and cascode D-mode product lines and customer segments.
• Efficient Power Conversion (EPC): Pioneer in GaN-on-Si enhancement-mode power transistors (40V-350V primary range). Comparable to CorEnergy in E-mode GaN discrete focus, lower-voltage HEMT products, and similar customer applications (consumer chargers, LED drivers, power tools).
• Navitas Semiconductor: US fabless GaN power IC company with strong design-in share in consumer PD fast chargers and EV onboard chargers. Directly comparable to CorEnergy's CoreGaN family and consumer/EV customer segments, with overlapping 650V E-mode GaN HEMT products.
• Innoscience: China's largest GaN-on-Si IDM, also producing GaN power devices from 30V-650V across consumer, automotive, and data center. Directly comparable to CorEnergy in business model (GaN IDM), product portfolio (D-mode/E-mode HEMTs), and customer base (Chinese consumer and EV OEMs).
• Power Integrations: US-based supplier of high-voltage analog ICs for power conversion, with a recently expanded GaN portfolio. Comparable to CorEnergy in target applications (USB PD chargers, industrial power supplies) and overlapping customer wins in consumer fast charging.
• Transphorm (a Renesas company): GaN power device specialist offering D-mode cascode GaN HEMTs with strong presence in higher-voltage (600V-1200V) applications including EV and renewable inverters. Directly overlaps with CorEnergy's D-mode cascode and 1200V monolithic platform.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat5 records

Key risks5 records

Key highlights6 records

Customer concentration

Revenue estimate

Valuation estimate

Number of profiles

Profiles3 records

Subsidiaries1 record

Funding overview

Funding rounds1 record

Investors6 records

Funding detail is available on the Subscription and Enterprise plan.Contact sales →

M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about CorEnergy Semiconductor