Patentix

What Patentix does

Patentix Inc. (Patentix株式会社) is a deep-tech venture founded in December 2022 as a spin-off from Ritsumeikan University in Kusatsu, Shiga Prefecture, Japan. The company is focused on the research, development, manufacturing, and sale of rutile-type germanium dioxide (r-GeO₂) epitaxial wafers — an ultra-wide bandgap (UWBG) semiconductor material with a measured bandgap of 4.45-4.77 eV that the company positions as a next-generation alternative to SiC, GaN, Ga₂O₃, and diamond for power electronics. Core technology is the proprietary PhantomSVD (Phantom Spatial Vapor Deposition) method, which enables sub-1000°C thin-film deposition, and which Patentix has used to achieve several world-firsts including n-type and p-type conductivity, Schottky barrier diode operation, depletion-mode MOSFET transistor operation, and growth of r-GeO₂ bulk crystals via the Floating Zone method.

The business model is hardware sales of r-GeO₂ epitaxial wafers and bulk crystals, supplemented by an open-innovation IP licensing strategy. Manufacturing is conducted through capital and business alliances with Quoltec Corporation (R&D, joint facility at Shiga Prefectural Techno Factory, and shipping inspection) and Nippon Electric Precision Industries (wafer production at the Kobe Plant), allowing Patentix to scale without owning a fab. Paid sample shipments commenced in July 2025, with 10mm samples shipping in 2025 and 6-inch wafer samples targeted for 2027. End-markets targeted include electric vehicles and railways, data center server power supplies, renewable energy power conditioners, industrial motor drives, home appliance inverters, and high-voltage/radiation-resistant power infrastructure and aerospace applications. The company has raised approximately ¥1.209 billion (~$8M USD) across a 2023 seed round and 2025-2026 Series A rounds, led by Ritsumeikan Social Impact Fund and Mitsubishi UFJ Capital, and has secured multiple Japanese government and regional innovation awards including METI's Go-Tech Program, NEDO support, and the Shigagin Innovation Award Grand Prize.

Name

Patentix

Legal name

Patentix株式会社 (Patentix Inc.)

Website

https://patentix.co.jp

Company type

Private

Founded year

2022

Operating status

Operating

Short description

Patentix is a Ritsumeikan University spin-off developing rutile-type germanium dioxide (r-GeO₂) epitaxial wafers for next-generation ultra-wide bandgap power semiconductors, targeting electric vehicles, data centers, renewables, and industrial applications.

Ownership category

akta.pro rank

Product category

Power Semiconductor Materials

NAICS

Semiconductor and Related Device Manufacturing (334413)

SIC

Semiconductors & Related Devices (3674)

akta.pro primary industry

Epitaxy Materials & Services (Epi Wafers/MBE/MOCVD) (HDAHAGAC)

akta.pro secondary industries

Compound Semiconductor Wafers & Substrates (SiC/GaN/GaAs/InP/Sapphire) (HDAHAGAB), Wafer Services & Reclaim (Epitaxy, Thinning, Reclaim) (HDAHACAH)

Keywords

• Power semiconductors
• Germanium dioxide wafers
• Ultra-wide bandgap materials
• Epitaxial wafers
• Semiconductor substrates

Headquarters

HQ city

Kusatsu

HQ country

Japan

HQ region

Asia

Offices2 records

Markets served

GTM type

B2B

Offering type

Hardware or Manufacturing

Cost components

Personnel, Technology or R&D, Operations, Marketing or Sales

Revenue model

1. r-GeO₂ Epitaxial Wafer Sales: Patentix manufactures and sells GeO₂ epitaxial wafers (substrates) for next-generation power semiconductors. The company has begun paid sample shipments through partnerships with Quoltec Corporation (shipping inspection) and Nippon Electric Precision Industries (manufacturing at Kobe Plant).
2. GeO₂ Power Device Development and Licensing: Research, development, manufacturing, and sales of new next-generation power semiconductor r-GeO₂ epitaxial wafers and GeO₂ devices. The company pursues an open innovation IP strategy.

Go-to-market motion2 records

Distribution channels3 records

Marketing channels10 records

Core offering

Patentix researches, develops, manufactures, and sells rutile-type germanium dioxide (r-GeO2) epitaxial wafers as an ultra-wide bandgap semiconductor material for next-generation power semiconductor devices. Its portfolio also includes r-GeO2 bulk crystals grown by the Floating Zone (FZ) method and GeO2-on-Si substrates under development, supplying power electronics device makers and research institutions globally.

Product overview

Patentix Inc. is a Ritsumeikan University-origin deep tech venture specializing in the research, development, manufacturing, and sales of rutile-type germanium dioxide (r-GeO₂) epitaxial wafers for next-generation power semiconductors. The company's product portfolio centers on ultra-wide bandgap (UWBG) semiconductor materials and includes: (1) r-GeO₂ epitaxial wafers as the core product for power semiconductor applications, (2) GeO₂ on Si substrates for cost-effective large-area fabrication currently under development, (3) r-GeO₂ bulk crystals for high-performance freestanding substrate applications, and (4) the proprietary PhantomSVD thin-film deposition technology that enables high-quality crystal growth. These products work together to enable high-voltage, low-loss power conversion devices targeting automotive, industrial, data center, renewable energy, and aerospace applications.

Differentiator

Problem solved

Functional benefit

Products and services

• r-GeO2 Epitaxial Wafers Rutile-type germanium dioxide epitaxial wafers grown via the proprietary PhantomSVD method, sold to power semiconductor device manufacturers and research institutions as the foundational substrate for next-generation ultra-wide bandgap power devices.
• r-GeO2 Bulk Crystals Bulk rutile-type germanium dioxide crystals grown by the Floating Zone (FZ) method, serving as the substrate material on which r-GeO2 epitaxial layers are deposited. Sold as a standalone substrate to research customers and used as the base material in the company's wafer manufacturing.
• GeO2-on-Si Substrates GeO2 epitaxial layers grown on conventional silicon substrates, under development as a cost-reduced alternative to bulk r-GeO2 wafers. Aimed at leveraging existing silicon wafer infrastructure to lower overall wafer cost for power semiconductor device manufacturers.

Quantifiable outcome

• r-GeO₂ bandgap of 4.6 eV vs. Si (1.1 eV) and SiC (3.3 eV) enables theoretically 90% more energy savings than SiC
• +3 more outcomes

Segments6 records

Ideal customer profiles2 records

Technology focussed Yes

API detail

Has API

No

API docs

API detail

Core technology

AI maturity

App detail

Feature5 records

Partnerships

Ten partnerships are on record, tiered major, minor and core.

• JTEKT Thermosystems Corporation (株式会社ジェイテクトサーモシステム)majorStrategic or Co-development Partner · 13 May 2026Collaboration on deposition of rutile germanium dioxide (r-GeO2) on 6-inch silicon substrates. Partnered with Patentix to achieve breakthrough in large-area GeO2 thin film formation suitable for cost-effective power semiconductor production.
• Okuno Chemical Industries Co., Ltd. (奥野製薬工業株式会社)minorGTM or Marketing Partner · 18 December 2025Joint exhibition partnership at SEMICON Japan 2025. Patentix showcased their technology at Okuno Chemical's booth (East Hall 6, Booth E6431) to reach semiconductor industry customers.
• Okuno Pharmaceutical Industries (奥野製薬工業株式会社)minorStrategic or Co-development Partner · 18 November 2025Participation in Biwako Semiconductor Initiative. Okuno Pharmaceutical joined to work with Patentix toward practical application and popularization of next-generation power semiconductor GeO2.
• Nisshinbo Micro Devices Inc. (日清紡マイクロデバイス株式会社)minorStrategic or Co-development Partner · 25 March 2024Participation in Biwako Semiconductor Initiative. Nisshinbo Micro Devices joined to support the social implementation of cutting-edge semiconductor materials including GeO2.
• Aisan (株式会社アイシン)minorStrategic or Co-development Partner · 15 February 2024Participation in Biwako Semiconductor Initiative (琵琶湖半導体構想). Aisan joined the initiative to support early supply of GeO2 semiconductor epitaxial wafers through industry-academia collaboration.
• Toray Research Center (株式会社東レリサーチセンター)minorStrategic or Co-development Partner · 9 February 2024Participation in Biwako Semiconductor Initiative. Toray Research Center joined to contribute to R&D and corporate collaboration for early supply of GeO2 semiconductor epitaxial wafers.
• Quoltec Corporation (株式会社クオルテック)coreStrategic or Co-development Partner · 14 December 2023Capital and business alliance for R&D, manufacturing, and analysis of GeO2 semiconductors. Quoltec handles shipping inspection for paid samples and has established an R&D facility at Shiga Prefectural Techno Factory for GeO2 thin film development and evaluation.
• Nippon Electric Precision Industries (日電精密工業株式会社)coreStrategic or Co-development Partner · 14 December 2023Capital and business alliance for semiconductor manufacturing equipment development. Manufacturing base designated at Nippon Denki Seimitsu's Kobe Plant for GeO2 wafer production. Started paid sample shipments in July 2025.
• National Institute for Materials Science (NIMS)minorStrategic or Co-development Partner · 18 September 2023Joint research collaboration with Ritsumeikan University, Kyoto University, and Patentix for development of rutile-type GeO2 mixed crystal semiconductor devices.
• Ritsumeikan UniversitycoreStrategic or Co-development Partner · 1 December 2022Patentix is a spin-off venture from Ritsumeikan University, founded based on research by Professor Kentaro Kaneko of the Research Organization of Science and Technology. The university provides ongoing research collaboration and access to research facilities at BKC Campus.

Scale indicators4 records

Recent moves7 records

Expansion highlights6 records

Direct peers

• Resonac (formerly Showa Denko): Major Japanese supplier of SiC epitaxial wafers for power semiconductors. Resonac competes directly with Patentix in the compound-semiconductor wafer market targeted at power-device customers in EVs and industrial applications.
• Soitec: French engineered-substrate manufacturer specializing in SOI, SiC, GaN, and other compound-semiconductor wafers. Soitec is closely comparable in business model—selling advanced semiconductor wafers into power and RF applications—and represents a relevant benchmark for Patentix's commercialization trajectory.
• Sumitomo Electric Industries: Japanese manufacturer of SiC substrates and power-semiconductor materials with deep industrial-customer relationships in Japan. Comparable as a domestic Japanese compound-semiconductor wafer supplier competing for the same power-device customers Patentix is approaching.
• SK Siltron CSS: Subsidiary of SK Siltron supplying SiC epitaxial wafers for power-semiconductor customers globally. Comparable as a compound-semiconductor wafer manufacturer focused on SiC substrates, representing the type of scale Playerix must eventually match in the power-device materials market.

Broad incumbents

• Coherent (formerly II-VI): Global supplier of SiC substrates and related compound-semiconductor materials with a broad photonics and electronics portfolio. Comparable to Patentix as a compound-semiconductor wafer manufacturer, but at much larger scale and with broader end-markets.
• Wolfspeed: US-based pure-play SiC substrate and power-device manufacturer operating 6-/8-inch fabs. Wolfspeed is the most visible incumbent in the compound-semiconductor wafer category that Patentix targets to disrupt with r-GeO₂.
• Mitsubishi Electric: Major Japanese power-semiconductor manufacturer producing SiC and Si devices for rail, industrial, and EV markets. Comparable as a downstream customer and potential integrator/competitor that could adopt or sideline r-GeO₂ in its power-electronics roadmap.
• ROHM Semiconductor: Japanese power-semiconductor leader with vertically integrated SiC device production (including SiC substrates via SiCrystal). Comparable as a SiC-focused power-device manufacturer that represents both a potential customer for advanced wafers and an entrenched competitor to r-GeO₂-based devices.

Emerging players

• Novel Crystal Technology: Japanese startup developing Ga₂O₃ epitaxial wafers for power electronics. Comparable as a Japanese deep-tech venture pursuing a UWBG compound-semiconductor material, directly competing for the same next-generation power-device design slots as r-GeO₂.
• Flosfia: Japanese startup developing Ga₂O₃ power semiconductor devices (MOCVD-grown corundum-structured α-Ga₂O₃). Comparable to Patentix as a Japanese UWBG semiconductor venture targeting automotive and industrial power-conversion applications.

Market position

Strengths5 records

Weaknesses5 records

Competitive moat5 records

Key risks6 records

Key highlights6 records

Customer concentration

• Xx.com/Patentix_Inc

Compliance1 record

Revenue estimate

Valuation estimate

Number of profiles

Profiles5 records

Funding overview

Funding rounds2 records

Investors3 records

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M&A

Investments

M&A and investment is available on the Subscription and Enterprise plan.Contact sales →

Frequently asked questions about Patentix